NT5CC256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya Technology
MPN: NT5CC256M16CP-EK β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $30.12 | $30.12 |
| 10 | $28.5 | $285.00 |
| 100 | $26 | $2,600.00 |
| 500 | $24 | $12,000.00 |
| 1,000 | $22 | $22,000.00 |
Drop-in alternatives for NT5CC256M16CP-EK β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
No drop-in alternatives available for this product.
Request AlternativesNT5CC256M16CP-EK Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Density | 4Gb |
| Organization | 256M x 16 |
| Supply Voltage | 1.35V (DDR3L) / 1.5V (DDR3) |
| Data Rate | 2133 Mb/s per pin |
| Package | 96-ball TFBGA |
| Operating Temperature | 0Β°C to +95Β°C (TC) |
| Number of Banks | 8 |
| Refresh Cycles | 8192 |
| CAS Latency (CL) | Programmable (e.g., 9, 10, 11, 12, 13) |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Burst Length | 8 and 4 (with burst chop) |
| Interface | Differential clock (CK, CK#) |
| RoHS | Compliant |
| Lead-Free | Yes |
NT5CC256M16CP-EK Pin Configuration
| Pin A1 | VDD β Power supply (1.35V/1.5V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDD β Power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ8 β Data input/output 8 |
| Pin B3 | DQ9 β Data input/output 9 |
| Pin B4 | VDD β Power supply |
| Pin B5 | DQ10 β Data input/output 10 |
| Pin B6 | DQ11 β Data input/output 11 |
| Pin B7 | VSS β Ground |
| Pin B8 | DQ12 β Data input/output 12 |
| Pin B9 | DQ13 β Data input/output 13 |
| Pin B10 | VDD β Power supply |
| Pin B11 | DQ14 β Data input/output 14 |
| Pin B12 | DQ15 β Data input/output 15 |
| Pin C1 | VDDQ β DQ power supply |
| Pin C2 | VSSQ β DQ ground |
| Pin C3 | VDDQ β DQ power supply |
| Pin C4 | VSSQ β DQ ground |
| Pin C5 | VDDQ β DQ power supply |
| Pin C6 | VSSQ β DQ ground |
| Pin C7 | VDDQ β DQ power supply |
| Pin C8 | VSSQ β DQ ground |
| Pin C9 | VDDQ β DQ power supply |
| Pin C10 | VSSQ β DQ ground |
| Pin C11 | VDDQ β DQ power supply |
| Pin C12 | VSSQ β DQ ground |
| Pin D1 | A0 β Address input 0 |
| Pin D2 | A1 β Address input 1 |
| Pin D3 | A2 β Address input 2 |
| Pin D4 | A3 β Address input 3 |
| Pin D5 | A4 β Address input 4 |
| Pin D6 | A5 β Address input 5 |
| Pin D7 | A6 β Address input 6 |
| Pin D8 | A7 β Address input 7 |
| Pin D9 | A8 β Address input 8 |
| Pin D10 | A9 β Address input 9 |
| Pin D11 | A10/AP β Address input 10 / Auto-precharge |
| Pin D12 | A11 β Address input 11 |
| Pin E1 | A12 β Address input 12 |
| Pin E2 | A13 β Address input 13 |
| Pin E3 | A14 β Address input 14 |
| Pin E4 | A15 β Address input 15 |
| Pin E5 | BA0 β Bank address 0 |
| Pin E6 | BA1 β Bank address 1 |
| Pin E7 | BA2 β Bank address 2 |
| Pin E8 | RAS# β Row address strobe |
| Pin E9 | CAS# β Column address strobe |
| Pin E10 | WE# β Write enable |
| Pin E11 | CS# β Chip select |
| Pin E12 | CKE β Clock enable |
| Pin F1 | ODT β On-die termination |
| Pin F2 | CK β Clock (positive) |
| Pin F3 | CK# β Clock (negative) |
| Pin F4 | VDD β Power supply |
| Pin F5 | VSS β Ground |
| Pin F6 | VDD β Power supply |
| Pin F7 | VSS β Ground |
| Pin F8 | VDD β Power supply |
| Pin F9 | VSS β Ground |
| Pin F10 | VDD β Power supply |
| Pin F11 | VSS β Ground |
| Pin F12 | VDD β Power supply |
| Pin G1 | DM0 β Data mask 0 |
| Pin G2 | DM1 β Data mask 1 |
| Pin G3 | DM2 β Data mask 2 |
| Pin G4 | DM3 β Data mask 3 |
| Pin G5 | VSS β Ground |
| Pin G6 | VDD β Power supply |
| Pin G7 | VSS β Ground |
| Pin G8 | VDD β Power supply |
| Pin G9 | VSS β Ground |
| Pin G10 | VDD β Power supply |
| Pin G11 | VSS β Ground |
| Pin G12 | VDD β Power supply |
| Pin H1 | DQS0 β Data strobe 0 (positive) |
| Pin H2 | DQS0# β Data strobe 0 (negative) |
| Pin H3 | DQS1 β Data strobe 1 (positive) |
| Pin H4 | DQS1# β Data strobe 1 (negative) |
| Pin H5 | DQS2 β Data strobe 2 (positive) |
| Pin H6 | DQS2# β Data strobe 2 (negative) |
| Pin H7 | DQS3 β Data strobe 3 (positive) |
| Pin H8 | DQS3# β Data strobe 3 (negative) |
| Pin H9 | VSS β Ground |
| Pin H10 | VDD β Power supply |
| Pin H11 | VSS β Ground |
| Pin H12 | VDD β Power supply |
| Pin J1 | RESET# β Asynchronous reset |
| Pin J2 | TDQS β Termination data strobe |
| Pin J3 | TDQS# β Termination data strobe (negative) |
| Pin J4 | ZQ β ZQ calibration |
| Pin J5 | VDD β Power supply |
| Pin J6 | VSS β Ground |
| Pin J7 | VDD β Power supply |
| Pin J8 | VSS β Ground |
| Pin J9 | VDD β Power supply |
| Pin J10 | VSS β Ground |
| Pin J11 | VDD β Power supply |
| Pin J12 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
NT5CC256M16CP-EK is suitable for 6 applications: Server Memory, Networking Equipment, Industrial Computing, Automotive Infotainment, Consumer Electronics, Embedded Systems.
Server Memory
The NT5CC256M16CP-EK provides high-density, low-power memory for server applications. Its 4Gb density and 2133 Mb/s data rate support demanding workloads, while DDR3L operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact module designs, and features like ECC support (if available) enhance reliability. When used in registered DIMMs, it pairs with a register clock driver (RCD) to buffer address and control signals, ensuring signal integrity at high speeds. The low voltage also reduces thermal load, improving system cooling efficiency.
Recommended
Networking Equipment
In networking equipment such as routers and switches, the NT5CC256M16CP-EK provides fast, low-power memory for packet buffering and routing tables. Its high data rate (2133 Mb/s) ensures low latency, while DDR3L voltage reduces power in always-on network devices. The device's on-die termination (ODT) and write leveling features improve signal integrity on high-speed buses, critical for reliable data transmission. It can be used in conjunction with a network processor or FPGA to handle data plane tasks. The 96-ball TFBGA package allows for dense PCB layouts, saving board space in compact networking hardware.
Recommended
Industrial Computing
The NT5CC256M16CP-EK is suitable for industrial PCs and embedded systems that require reliable operation over extended temperature ranges (0Β°C to +95Β°C). Its low power consumption is beneficial for fanless designs, and the high data rate supports real-time data processing. The device's auto self-refresh and ZQ calibration features ensure stable operation in varying thermal conditions. It can be paired with an industrial-grade processor or FPGA for applications like machine vision and process control. The 96-ball TFBGA package provides robust solder joints for vibration-prone environments.
Recommended
Automotive Infotainment
In automotive infotainment systems, the NT5CC256M16CP-EK provides high-bandwidth memory for navigation, multimedia, and instrument cluster displays. Its DDR3L operation reduces power consumption, which is critical in vehicles. The device supports a wide temperature range, making it suitable for cabin environments. Features like write leveling and dynamic ODT ensure reliable operation in noisy automotive electrical environments. It can be used with an automotive-grade application processor or SoC. The 96-ball TFBGA package is compact, fitting into space-constrained head units.
Recommended
Consumer Electronics
The NT5CC256M16CP-EK is used in consumer devices like set-top boxes, smart TVs, and gaming consoles. Its high data rate enables smooth video streaming and responsive user interfaces, while DDR3L voltage reduces power consumption in always-on devices. The device's small TFBGA package allows for slim product designs. It can be paired with a media processor or SoC for video decoding and rendering. Features like auto precharge and burst chop improve memory efficiency, reducing latency in real-time applications.
Recommended
Embedded Systems
For general embedded systems, the NT5CC256M16CP-EK offers a balance of performance and power efficiency. Its 4Gb density is suitable for applications requiring large memory footprints, such as data logging and complex algorithms. The device's low voltage and wide temperature range make it versatile for various environments. It can be interfaced with a wide range of microcontrollers and FPGAs that support DDR3L. The 96-ball TFBGA package is easy to route on multi-layer PCBs. Features like on-die termination simplify PCB design by reducing the need for external termination resistors.
Recommended
Recommended Products Summary
Engineering reference data for NT5CC256M16CP-EK β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | NT5CC256M16ER-EK | NT5CC256M16DP-EK | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V (DDR3L) | 1.35V (DDR3L) | 1.35V (DDR3L) | 1.35V (DDR3L) |
| Data Rate | 2133 Mb/s | 2133 Mb/s | 2133 Mb/s | 2133 Mb/s |
| Operating Temperature | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C |
| Number of Banks | 8 | 8 | 8 | 8 |
Key Differentiators
- Low-voltage DDR3L operation (vs Standard DDR3 parts)
- Wide temperature range (vs Commercial-only DDR3L parts)
- High data rate (vs Older DDR3L parts with lower speed grades)
Design Notes
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-75 ohms for address/control lines. Keep trace lengths matched within +/- 50 mils for DQ/DQS groups. Use a solid ground plane beneath the memory device and minimize vias on high-speed traces. Refer to the Nanya layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm +/- 1% resistor to ground for impedance calibration. Ensure the VREF voltage is clean and properly bypassed.
The NT5CC256M16CP-EK operates up to +95Β°C TC. For high-density systems, ensure adequate airflow or heatsinking to keep the case temperature within limits. The 96-ball TFBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Compliance Information
RoHS compliant and lead-free per datasheet and distributor listings. AEC-Q100 not specified for this part number; automotive grade may require specific suffix.
