NT5CC256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya Technology
Référence : NT5CC256M16CP-EK ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $30.12 | $30,12 |
| 10 | $28.5 | $285,00 |
| 100 | $26 | $2 600,00 |
| 500 | $24 | $12 000,00 |
| 1 000 | $22 | $22 000,00 |
NT5CC256M16CP-EK Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DRAM memory hierarchy, which includes SRAM, DRAM, and flash memory, and is widely used in main memory, graphics, and embedded applications.
Key features include a 4Gb density, 256M x 16 organization, 96-ball TFBGA package, and support for both DDR3 and DDR3L operation. The device operates over a temperature range of 0°C to +95°C (TC) and includes features such as auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, and ZQ calibration. These features enhance signal integrity and system reliability.
The NT5CC256M16CP-EK uses an 8n-prefetch architecture with 8 internal memory banks, differential clock inputs (CK, CK#), and programmable CAS latency (CL), write latency (CWL), and additive latency. It supports burst lengths of 8 and 4 with burst chop, and includes on-die termination (ODT) for improved signal quality. The device is RoHS compliant and lead-free.
Typical applications include servers, networking equipment, industrial computing, automotive infotainment, and consumer electronics such as set-top boxes and smart TVs. Its low-voltage operation makes it ideal for power-sensitive designs, while its high-speed interface supports demanding data-intensive workloads.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for proper impedance calibration.
Alternatives de remplacement direct pour NT5CC256M16CP-EK — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16CP-EK (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Data Rate, Density, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CC256M16ER-EK
✅ Remplacement direct✓ En stock
$24 / unité
Voir la fiche technique →NT5CC256M16DP-EK
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NT5CC256M16EP-EK
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →NT5CC256M16CP-EK Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35V (DDR3L) / 1.5V (DDR3) |
| Débit de données | 2133 Mb/s per pin |
| Boîtier | 96-ball TFBGA |
| Température de fonctionnement | 0°C to +95°C (TC) |
| Number of Banks | 8 |
| Refresh Cycles | 8192 |
| CAS Latency (CL) | Programmable (e.g., 9, 10, 11, 12, 13) |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Burst Length | 8 and 4 (with burst chop) |
| Interface | Differential clock (CK, CK#) |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de NT5CC256M16CP-EK
| Broche A1 | VDD — Power supply (1.35V/1.5V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDD — Power supply |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDDQ — DQ power supply |
| Broche C2 | VSSQ — DQ ground |
| Broche C3 | VDDQ — DQ power supply |
| Broche C4 | VSSQ — DQ ground |
| Broche C5 | VDDQ — DQ power supply |
| Broche C6 | VSSQ — DQ ground |
| Broche C7 | VDDQ — DQ power supply |
| Broche C8 | VSSQ — DQ ground |
| Broche C9 | VDDQ — DQ power supply |
| Broche C10 | VSSQ — DQ ground |
| Broche C11 | VDDQ — DQ power supply |
| Broche C12 | VSSQ — DQ ground |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche D3 | A2 — Address input 2 |
| Broche D4 | A3 — Address input 3 |
| Broche D5 | A4 — Address input 4 |
| Broche D6 | A5 — Address input 5 |
| Broche D7 | A6 — Address input 6 |
| Broche D8 | A7 — Address input 7 |
| Broche D9 | A8 — Address input 8 |
| Broche D10 | A9 — Address input 9 |
| Broche D11 | A10/AP — Address input 10 / Auto-precharge |
| Broche D12 | A11 — Address input 11 |
| Broche E1 | A12 — Address input 12 |
| Broche E2 | A13 — Address input 13 |
| Broche E3 | A14 — Address input 14 |
| Broche E4 | A15 — Address input 15 |
| Broche E5 | BA0 — Bank address 0 |
| Broche E6 | BA1 — Bank address 1 |
| Broche E7 | BA2 — Bank address 2 |
| Broche E8 | RAS# — Row address strobe |
| Broche E9 | CAS# — Column address strobe |
| Broche E10 | WE# — Write enable |
| Broche E11 | CS# — Chip select |
| Broche E12 | CKE — Clock enable |
| Broche F1 | ODT — On-die termination |
| Broche F2 | CK — Clock (positive) |
| Broche F3 | CK# — Clock (negative) |
| Broche F4 | VDD — Power supply |
| Broche F5 | VSS — Ground |
| Broche F6 | VDD — Power supply |
| Broche F7 | VSS — Ground |
| Broche F8 | VDD — Power supply |
| Broche F9 | VSS — Ground |
| Broche F10 | VDD — Power supply |
| Broche F11 | VSS — Ground |
| Broche F12 | VDD — Power supply |
| Broche G1 | DM0 — Data mask 0 |
| Broche G2 | DM1 — Data mask 1 |
| Broche G3 | DM2 — Data mask 2 |
| Broche G4 | DM3 — Data mask 3 |
| Broche G5 | VSS — Ground |
| Broche G6 | VDD — Power supply |
| Broche G7 | VSS — Ground |
| Broche G8 | VDD — Power supply |
| Broche G9 | VSS — Ground |
| Broche G10 | VDD — Power supply |
| Broche G11 | VSS — Ground |
| Broche G12 | VDD — Power supply |
| Broche H1 | DQS0 — Data strobe 0 (positive) |
| Broche H2 | DQS0# — Data strobe 0 (negative) |
| Broche H3 | DQS1 — Data strobe 1 (positive) |
| Broche H4 | DQS1# — Data strobe 1 (negative) |
| Broche H5 | DQS2 — Data strobe 2 (positive) |
| Broche H6 | DQS2# — Data strobe 2 (negative) |
| Broche H7 | DQS3 — Data strobe 3 (positive) |
| Broche H8 | DQS3# — Data strobe 3 (negative) |
| Broche H9 | VSS — Ground |
| Broche H10 | VDD — Power supply |
| Broche H11 | VSS — Ground |
| Broche H12 | VDD — Power supply |
| Broche J1 | RESET# — Asynchronous reset |
| Broche J2 | TDQS — Termination data strobe |
| Broche J3 | TDQS# — Termination data strobe (negative) |
| Broche J4 | ZQ — ZQ calibration |
| Broche J5 | VDD — Power supply |
| Broche J6 | VSS — Ground |
| Broche J7 | VDD — Power supply |
| Broche J8 | VSS — Ground |
| Broche J9 | VDD — Power supply |
| Broche J10 | VSS — Ground |
| Broche J11 | VDD — Power supply |
| Broche J12 | VSS — Ground |
Applications typiques
NT5CC256M16CP-EK convient pour 6 applications: Server Memory, Networking Equipment, Industrial Computing, Automotive Infotainment, Consumer Electronics, Embedded Systems.
Server Memory
The NT5CC256M16CP-EK provides high-density, low-power memory for server applications. Its 4Gb density and 2133 Mb/s data rate support demanding workloads, while DDR3L operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact module designs, and features like ECC support (if available) enhance reliability. When used in registered DIMMs, it pairs with a register clock driver (RCD) to buffer address and control signals, ensuring signal integrity at high speeds. The low voltage also reduces thermal load, improving system cooling efficiency.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the NT5CC256M16CP-EK provides fast, low-power memory for packet buffering and routing tables. Its high data rate (2133 Mb/s) ensures low latency, while DDR3L voltage reduces power in always-on network devices. The device's on-die termination (ODT) and write leveling features improve signal integrity on high-speed buses, critical for reliable data transmission. It can be used in conjunction with a network processor or FPGA to handle data plane tasks. The 96-ball TFBGA package allows for dense PCB layouts, saving board space in compact networking hardware.
Recommandé
Industrial Computing
The NT5CC256M16CP-EK is suitable for industrial PCs and embedded systems that require reliable operation over extended temperature ranges (0°C to +95°C). Its low power consumption is beneficial for fanless designs, and the high data rate supports real-time data processing. The device's auto self-refresh and ZQ calibration features ensure stable operation in varying thermal conditions. It can be paired with an industrial-grade processor or FPGA for applications like machine vision and process control. The 96-ball TFBGA package provides robust solder joints for vibration-prone environments.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the NT5CC256M16CP-EK provides high-bandwidth memory for navigation, multimedia, and instrument cluster displays. Its DDR3L operation reduces power consumption, which is critical in vehicles. The device supports a wide temperature range, making it suitable for cabin environments. Features like write leveling and dynamic ODT ensure reliable operation in noisy automotive electrical environments. It can be used with an automotive-grade application processor or SoC. The 96-ball TFBGA package is compact, fitting into space-constrained head units.
Recommandé
Consumer Electronics
The NT5CC256M16CP-EK is used in consumer devices like set-top boxes, smart TVs, and gaming consoles. Its high data rate enables smooth video streaming and responsive user interfaces, while DDR3L voltage reduces power consumption in always-on devices. The device's small TFBGA package allows for slim product designs. It can be paired with a media processor or SoC for video decoding and rendering. Features like auto precharge and burst chop improve memory efficiency, reducing latency in real-time applications.
Recommandé
Embedded Systems
For general embedded systems, the NT5CC256M16CP-EK offers a balance of performance and power efficiency. Its 4Gb density is suitable for applications requiring large memory footprints, such as data logging and complex algorithms. The device's low voltage and wide temperature range make it versatile for various environments. It can be interfaced with a wide range of microcontrollers and FPGAs that support DDR3L. The 96-ball TFBGA package is easy to route on multi-layer PCBs. Features like on-die termination simplify PCB design by reducing the need for external termination resistors.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16CP-EK — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CC256M16ER-EK | NT5CC256M16DP-EK | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V (DDR3L) | 1.35V (DDR3L) | 1.35V (DDR3L) | 1.35V (DDR3L) |
| Data Rate | 2133 Mb/s | 2133 Mb/s | 2133 Mb/s | 2133 Mb/s |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Number of Banks | 8 | 8 | 8 | 8 |
Principaux différenciateurs
- Low-voltage DDR3L operation (vs Standard DDR3 parts)
- Wide temperature range (vs Commercial-only DDR3L parts)
- High data rate (vs Older DDR3L parts with lower speed grades)
Notes de conception
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-75 ohms for address/control lines. Keep trace lengths matched within +/- 50 mils for DQ/DQS groups. Use a solid ground plane beneath the memory device and minimize vias on high-speed traces. Refer to the Nanya layout guidelines in the datasheet for specific recommendations.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm +/- 1% resistor to ground for impedance calibration. Ensure the VREF voltage is clean and properly bypassed.
The NT5CC256M16CP-EK operates up to +95°C TC. For high-density systems, ensure adequate airflow or heatsinking to keep the case temperature within limits. The 96-ball TFBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Informations de conformité
RoHS compliant and lead-free per datasheet and distributor listings. AEC-Q100 not specified for this part number; automotive grade may require specific suffix.
