2ED2106S06FXUMA1 vs 1ED3142MC12HXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2ED2106S06FXUMA1 sa pamamagitan ng Infineon at 1ED3142MC12HXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2ED2106S06FXUMA1 1ED3142MC12HXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) Inverting, Non-Inverting
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns 40 ns
Bilang ng Outputs 2 (1 high-side, 1 low-side) 2 (separate source/sink)
Number of Drivers 2 —
Bilang ng Pins 8 —
Packhaging PG-DSO-8-69 (DSO-8) PG-DSO-8 (PG-LDSO-8-1)
Uri ng Pagpapasok Surface Mount Surface Mount
Bootstrap Diode Integrated —
Hanay ng Temperature na Operasyon -40C to +125C —
Packaging Tape & Reel —
Type ng Output Half-Bridge, Non-Inverting —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

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