2ED2106S06FXUMA1 vs 1ED3142MC12HXUMA1 比較

詳細並排比較 2ED2106S06FXUMA1 由 Infineon 與 1ED3142MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 啟用中

規格比較

參數 2ED2106S06FXUMA1 1ED3142MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) Inverting, Non-Inverting
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns 40 ns
輸出數量 2 (1 high-side, 1 low-side) 2 (separate source/sink)
Number of Drivers 2 —
腳位數 8 —
封裝 PG-DSO-8-69 (DSO-8) PG-DSO-8 (PG-LDSO-8-1)
安裝類型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作溫度範圍 -40C to +125C —
Packaging Tape & Reel —
輸出類型 Half-Bridge, Non-Inverting —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

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