BC817-40 vs BC817-40-RF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BC817-40 sa pamamagitan ng Nexperia at BC817-40-RF sa pamamagitan ng Taiwan Semiconductor. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Taiwan Semiconductor
BC817-40-RF - 45V 0.5A NPN BJT SOT-23 | Taiwan Semiconductor
BC817-40-RF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BC817-40 | BC817-40-RF |
|---|---|---|
| Brand | Nexperia | Taiwan Semiconductor |
| Kategorya | Transistors | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| Packhaging | SOT-23 (TO-236AB), 3 pins | SOT-23 (TO-236), 3 pins |
| Voltage ng Collector-Emitter (Vceo) | 45 V | 45 V |
| Voltage ng Collector-Base (Vcbo) | 50 V | 50 V |
| Voltage ng Emitter-Base (Vebo) | 5 V | 5 V |
| Continuous Collector Current (IC) | 500 mA | 0.5 A |
| Peak Collector Current (ICM) | [DATA_NEEDED: ICM value] | [DATA_NEEDED: peak pulsed collector current rating] |
| Total Power Dissipation (Ptot) | 310 mW | — |
| DC Current Gain (hFE) - -40 bin | 250 to 600 (at 100 mA, 1 V) | — |
| Dalas ng Transisyon (ft) | 100 MHz | 100 MHz |
| Collector-Emitter Saturation Voltage (VCEsat) | 700 mV max (at 500 mA, 50 mA base) | — |
| Base-Emitter Voltage (VBE) | [DATA_NEEDED: VBE typical] | — |
| Temperature ng Junction na Operasyon | -65 C to +150 C | -55 C to +150 C |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 (unlimited) |
| Tindminan RoHS | Compliant | Compliant (per manufacturer product page) |
| Complementary PNP Part | BC807-40 | — |
| DC Current Gain (hFE) Bin | — | 250 to 600 (BC817-40 gain bin) |
| Power Dissipation (Pd) | — | 310 mW |
| Lead-Free | — | Yes (per Taiwan Semiconductor product page) |
| PNP Complement | — | BC807 series |