BC817-40 vs BC817-40-RF 比較

詳細並排比較 BC817-40 由 Nexperia 與 BC817-40-RF 由 Taiwan Semiconductor. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Taiwan Semiconductor
BC817-40-RF BC817-40-RF - 45V 0.5A NPN BJT SOT-23 | Taiwan Semiconductor

BC817-40-RF - 45V 0.5A NPN BJT SOT-23 | Taiwan Semiconductor

BC817-40-RF ✓ 啟用中

規格比較

參數 BC817-40 BC817-40-RF
品牌 Nexperia Taiwan Semiconductor
類別 Transistors Transistors
生命週期狀態 啟用中 啟用中
電晶體類型 NPN Bipolar Junction Transistor (BJT) NPN Bipolar Junction Transistor (BJT)
封裝 SOT-23 (TO-236AB), 3 pins SOT-23 (TO-236), 3 pins
集極-射極電壓 (Vceo) 45 V 45 V
集極-基極電壓 (Vcbo) 50 V 50 V
射極-基極電壓 (Vebo) 5 V 5 V
Continuous Collector Current (IC) 500 mA 0.5 A
Peak Collector Current (ICM) [DATA_NEEDED: ICM value] [DATA_NEEDED: peak pulsed collector current rating]
Total Power Dissipation (Ptot) 310 mW —
DC Current Gain (hFE) - -40 bin 250 to 600 (at 100 mA, 1 V) —
轉換頻率 (ft) 100 MHz 100 MHz
Collector-Emitter Saturation Voltage (VCEsat) 700 mV max (at 500 mA, 50 mA base) —
Base-Emitter Voltage (VBE) [DATA_NEEDED: VBE typical] —
工作接面溫度 -65 C to +150 C -55 C to +150 C
安裝類型 Surface Mount Surface Mount
MSL 等級 1 1 (unlimited)
RoHS 狀態 Compliant Compliant (per manufacturer product page)
Complementary PNP Part BC807-40 —
DC Current Gain (hFE) Bin — 250 to 600 (BC817-40 gain bin)
Power Dissipation (Pd) — 310 mW
Lead-Free — Yes (per Taiwan Semiconductor product page)
PNP Complement — BC807 series

資料表與資源

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