BSP129H6906XTSA1 vs BSP135H6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP129H6906XTSA1 sa pamamagitan ng Infineon at BSP135H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSP129H6906XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP129H6906XTSA1 | BSP135H6327XTSA1 |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 240 V | 600 V |
| Continuous Drain Current (ID) at TA=25C | 350 mA | — |
| Power Dissipation (PD) at TA=25C | 1.8 W | — |
| Drain-Source On-Resistance (RDS(on)) | 6 Ohm (max) | — |
| Operating Mode | Normally-On (Depletion) | Normally ON (depletion) |
| Gate-Source Pinch-Off Voltage | [DATA_NEEDED: VGS(off) typical value] | — |
| Packhaging | PG-SOT223-4 (SOT-223) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 functional + 1 tab (4 leads) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: TJ max] | -55C to +150C (junction, typical) |
| ESD Protection | Integrated Zener diodes on gate | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (unlimited floor life) | 1 |
| Continuous Drain Current (ID) | — | 120 mA |
| Power Dissipation (PD) | — | 1.8 W |
| On-Resistance RDS(on) max | — | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | — | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Technology | — | SIPMOS (planar DMOS) |