EP3SE260H780C2N vs EP3SE260H780C3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C2N sa pamamagitan ng Intel at EP3SE260H780C3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Intel
EP3SE260H780C2N EP3SE260H780C2N - Stratix III E FPGA 255K LE, 780-BGA | Intel

EP3SE260H780C2N - Stratix III E FPGA 255K LE, 780-BGA | Intel

EP3SE260H780C2N ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro EP3SE260H780C2N EP3SE260H780C3
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Huling Pagbili Aktibo
Series Stratix III E EP3SE
Logic Elements 255,000 255,000
LABs / CLBs 10,200 —
Total RAM Bits 16,672,768 —
User I/O Count 488 —
Number of Transceivers [DATA_NEEDED: transceiver count] —
Core Voltage 0.9 V —
Packhaging 780-BGA FCBGA 780-ball FCBGA (HBGA), flip-chip
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Hanay ng Temperature na Operasyon Commercial (0C to +85C) —
Speed Grade C2 C3
Level ng MSL 3 (168 hours) —
Reflow Peak Time Max 40 s —
Tindminan RoHS [DATA_NEEDED: rohs status] Compliant (per product listings)
Lead-Free [DATA_NEEDED: lead-free] —
Package Code BGA —
Terminal Form Ball —
Number of Terminals 780 —
Process Node 40 nm —
Device Family — Stratix III Enhanced (Stratix III E)
Logic Array Blocks (LABs) — 10200
Embedded Memory — 16,672,768 bits (16.67 Mbit)
User I/Os — 488
Operating Voltage (Core) — 0.9 V
Operating Voltage (Auxiliary) — 1.1 V
Process Technology — 65 nm CMOS
Temperature na Operasyon — Commercial, 0C to +85C
Maximum Core Frequency — 500 MHz
Level ng Sensitivity sa Asid ng Moisture (MSL) — 3 (168 hours)
Packaging Type — Tray
Configuration Memory Support — Fast passive parallel, JTAG, Active Serial

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