EP3SE260H780C2N vs EP3SE260H780C3 比較
詳細並排比較 EP3SE260H780C2N 由 Intel 與 EP3SE260H780C3 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE260H780C2N | EP3SE260H780C3 |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 最後購買 | 啟用中 |
| Series | Stratix III E | EP3SE |
| Logic Elements | 255,000 | 255,000 |
| LABs / CLBs | 10,200 | — |
| Total RAM Bits | 16,672,768 | — |
| User I/O Count | 488 | — |
| Number of Transceivers | [DATA_NEEDED: transceiver count] | — |
| Core Voltage | 0.9 V | — |
| 封裝 | 780-BGA FCBGA | 780-ball FCBGA (HBGA), flip-chip |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 工作溫度範圍 | Commercial (0C to +85C) | — |
| Speed Grade | C2 | C3 |
| MSL 等級 | 3 (168 hours) | — |
| Reflow Peak Time Max | 40 s | — |
| RoHS 狀態 | [DATA_NEEDED: rohs status] | Compliant (per product listings) |
| Lead-Free | [DATA_NEEDED: lead-free] | — |
| Package Code | BGA | — |
| Terminal Form | Ball | — |
| Number of Terminals | 780 | — |
| Process Node | 40 nm | — |
| Device Family | — | Stratix III Enhanced (Stratix III E) |
| Logic Array Blocks (LABs) | — | 10200 |
| Embedded Memory | — | 16,672,768 bits (16.67 Mbit) |
| User I/Os | — | 488 |
| Operating Voltage (Core) | — | 0.9 V |
| Operating Voltage (Auxiliary) | — | 1.1 V |
| Process Technology | — | 65 nm CMOS |
| 工作溫度 | — | Commercial, 0C to +85C |
| Maximum Core Frequency | — | 500 MHz |
| 濕度敏感等級 (MSL) | — | 3 (168 hours) |
| Packaging Type | — | Tray |
| Configuration Memory Support | — | Fast passive parallel, JTAG, Active Serial |