H5AN4G8NBJR-VKC vs H5AN4G6NBJR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-VKC sa pamamagitan ng SK hynix at H5AN4G6NBJR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-VKC | H5AN4G6NBJR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gb | 4 Gbit |
| Memory Organization | 512M x8 | 256M x 16 |
| Rate ng Data | 2666 Mbps (DDR4-2666) | 2666 Mbps |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V nominal (1.14 V to 1.26 V) |
| Packhaging | FBGA-78 (7.5 x 11 mm) | FBGA-96 / TFBGA (PBGA96) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | CMOS |
| Volatile / Non-Volatile | Volatile | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for 2666 grade] | — |
| Refresh | [DATA_NEEDED: refresh rate] | Auto self-refresh |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | Compliant |
| Packaging | Tray | Tray |
| Katayuan ng Lifecycle | Active | — |
| Clock Frequency | — | 1.6 GHz (internal reference per distributor data) |
| Operating Current | — | 38 mA (typical, per distributor data) |
| Interface | — | Parallel |
| Body Size | — | 13 mm, 1.2 mm profile, 0.8 mm ball pitch |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration; write leveling |
| Protection Functions | — | Asynchronous reset; CRC; data mask |