H5TC4G63AFR-PBA vs IS43TR16256AL-107MBLI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBA sa pamamagitan ng SK hynix at IS43TR16256AL-107MBLI sa pamamagitan ng ISSI, Integrated Silicon Solution Inc. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBA | IS43TR16256AL-107MBLI |
|---|---|---|
| Brand | SK hynix | ISSI, Integrated Silicon Solution Inc |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $3.98 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | 1866 Mbps |
| Packhaging | 96-ball FBGA | — |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 |
| CAS Latency (CL) | 11, 12, 13 | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (Tcase) | — |
| Interface | 16-bit I/O | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Laki ng Memory | — | 4 Gbit |
| Clock Speed | — | 933 MHz |
| Access Time | — | 20 ns |
| Volte ng Pagbibigay | — | 1.35V (backward compatible to 1.5V) |
| Packhaging / Kaso | — | 96-TWBGA (9x13mm) |
| Uri ng Pagpapasok | — | Surface Mount |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| On-Die Termination | — | Yes |
| Tindminan RoHS | — | Compliant |
| Memory Interface | — | Parallel |