IRFB4020PBF vs IRF2805PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4020PBF sa pamamagitan ng Infineon at IRF2805PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4020PBF IRF2805PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) HEXFET Power MOSFET (IR MOSFET)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC 18 A —
Power Dissipation (PD) at TC 100 W —
RDS(on) Maximum 100 mOhm —
Gate-Source Voltage (VGS) Maximum 20 V —
Thermal Resistance, Junction-to-Case (RthJC) 1.43 C/W —
Temperature ng Junction na Operasyon 175 C (max) —
Packhaging TO-220AB (through-hole) TO-220AB (3-pin, through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Bilang ng Pin 3 (Gate, Drain, Source) —
Lead-Free (PbF suffix) Yes —
Market Qualification Consumer —
Recommended Use Class-D audio amplifier and high-efficiency switching applications —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF2805PBF
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc — 75 A
Continuous Drain Current (ID) at 25°C — 175 A (pulsed / package-limited)
On-Resistance RDS(on) max @ VGS=10V — 4.7 mOhm
Gate Threshold Voltage (VGS(th)) — 4 V
Total Gate Charge (Qg) — 150 nC
Power Dissipation (PD) at Tc — 330 W
Maximum Junction Temperature — 175 °C
Tindminan RoHS — Compliant (Pb-free)
Hanay ng Temperature na Operasyon — -55 °C to +175 °C
Configuration — Single N-Channel MOSFET

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