IRL540NSTRLPBF vs IRLR3114ZTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRL540NSTRLPBF sa pamamagitan ng Infineon at IRLR3114ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRL540NSTRLPBF IRLR3114ZTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 130 A
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V 16 V
Gate Threshold Voltage (VGS(th)) Logic-level 2.5 V (typ)
Total Gate Charge (Qg) 49.3 nC 40 nC @ VGS=4.5 V
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Hanay ng Temperature na Operasyon -55°C to +175°C —
Packhaging TO-263 (D2PAK) TO-252AA (DPAK) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) —
Tindminan RoHS Compliant (LPBF suffix indicates lead-free) Compliant
Level ng MSL [DATA_NEEDED: MSL rating] —
Uri ng Transistor — N-Channel MOSFET
Technology — HEXFET (IR MOSFET)
Continuous Drain Current (ID, Tc=25 C) — 42 A
Continuous Drain Current (ID, Tc=100 C) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V — 4.9 mOhm
Input Capacitance (Ciss) — 3.81 nF
Power Dissipation (Pd, Tc=25 C) — 140 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Bilang ng Pins — 3 (2 + tab)

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