K4A4G085WE-BCRC vs MT40A512M8SA-062E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WE-BCRC sa pamamagitan ng Samsung Electronics at MT40A512M8SA-062E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M8SA-062E - 4Gb DDR4 SDRAM x8, 3200 | Micron
MT40A512M8SA-062E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WE-BCRC | MT40A512M8SA-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2400 Mbps | 3200 MT/s (DDR4-3200 class) |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| Packhaging | FBGA-78 | 78-FBGA (7.5 x 11 mm), Z10B |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| Interface | Parallel | Parallel, 1.2 V pseudo open-drain I/O |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | — |
| Level ng MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Tindminan RoHS | Compliant (per LCSC listing) | — |
| Laki ng Memory | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 13.75 ns |
| Write Cycle Time | — | 15 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP Supply | — | 2.5 V (-125 mV / +250 mV) |
| VREFDQ | — | On-die internal adjustable generation |
| Operating Temperature (TC max) | — | up to 95 degrees C |
| Package Flow | — | :F (lead-free / RoHS) |
| Style ng Pagpapasok | — | SMD/SMT |