K4A4G085WF-BITD vs K4A4G085WD-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WF-BITD sa pamamagitan ng Samsung Electronics at K4A4G085WD-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung
K4A4G085WD-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WF-BITD | K4A4G085WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | 512M x 8 |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| Temperature na Operasyon | -40C to +95C | — |
| Packhaging | 78-ball FBGA (78FBGA) | FBGA-78 (TFBGA) |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | — |
| Latensya ng CAS | CL19 (typical at 2666 Mbps) | [DATA_NEEDED: CAS Latency] |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Interface | Parallel, DDR4 SSTL12 | Parallel |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| Memory Density | — | 4 Gbit |
| Rate ng Data | — | 2400 Mb/s (PC2400) |
| Volte ng Pagbibigay | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: Operating Temperature Range] |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS Status] |
| Level ng MSL | — | [DATA_NEEDED: MSL Level] |