K4A4G085WF-BITD vs K4A4G085WD-BCRC 比較
詳細並排比較 K4A4G085WF-BITD 由 Samsung Electronics 與 K4A4G085WD-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G085WF-BITD | K4A4G085WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| 組織 | 512M x 8 | 512M x 8 |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| 工作溫度 | -40C to +95C | — |
| 封裝 | 78-ball FBGA (78FBGA) | FBGA-78 (TFBGA) |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | — |
| CAS 延遲 | CL19 (typical at 2666 Mbps) | [DATA_NEEDED: CAS Latency] |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| 介面 | Parallel, DDR4 SSTL12 | Parallel |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | [DATA_NEEDED: Refresh specification] |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| Memory Density | — | 4 Gbit |
| 資料速率 | — | 2400 Mb/s (PC2400) |
| 供應電壓 | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| 工作溫度範圍 | — | [DATA_NEEDED: Operating Temperature Range] |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS Status] |
| MSL 等級 | — | [DATA_NEEDED: MSL Level] |