K4A8G165WB-BCRC vs H5AN8G6NDJR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCRC sa pamamagitan ng Samsung Electronics at H5AN8G6NDJR sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCRC | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Laki ng Memory | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Interface | Parallel (DDR4 SDRAM bus) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Rate ng Data | 2400 Mbps/pin (DDR4-2400) | 3200 Mbps (DDR4-3200) |
| Technology | CMOS, B-die 8Gb die | — |
| Packhaging | 96-ball FBGA (PBGA96) | 96-ball FBGA (13mm x 7.5mm) |
| Uri ng Pagpapasok | Surface Mount | — |
| Temperature na Operasyon | -40C to +95C | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organisasyon | — | 512M x 16 |
| Volte ng Pagbibigay | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensya ng CAS | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Mga Karakteristika | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |