K4AAG165WA-BCWE vs K4AAG165WM-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG165WA-BCWE sa pamamagitan ng Samsung Electronics at K4AAG165WM-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG165WA-BCWE - 16Gb DDR4 3200Mbps SDRAM | Samsung
K4AAG165WA-BCWE ✓ NakahandaSamsung Electronics
K4AAG165WM-BCWE - 16Gb DDR4-3200 SDRAM x16 | Samsung
K4AAG165WM-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG165WA-BCWE | K4AAG165WM-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| Rate ng Data | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | 96-ball FBGA | 78-ball FBGA |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| Temperature na Operasyon | -40C to +95C | [DATA_NEEDED: temperature range for WM-BCWE] |
| Uri ng Interface | Parallel, DDR4 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Format | DRAM (Volatile) | — |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | — |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tray | — |
| Product Status | Active | — |
| Density | — | 16 Gbit |
| Organisasyon | — | 256M x 16 (1G x 16) |
| Interface | — | Parallel (DDR4) |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| Latensya ng CAS | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |