IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon
MPN: IPB020N08N5ATMA1 ✓ فعالIPB020N08N5ATMA1 جائزہ
A power MOSFET is a voltage-controlled switching device that uses an electric field at the gate to modulate current flow between drain and source. N-channel MOSFETs are preferred for low-side and high-side switching in power converters because their majority-carrier (electron) conduction yields lower on-resistance per unit silicon area than equivalent P-channel devices. The IPB020N08N5ATMA1 sits at the top of the 80 V OptiMOS 5 family, which belongs to the broader power management IC and discrete semiconductor hierarchy - specifically the discrete MOSFET subclass targeting telecom, server, and industrial switching applications.
Key features include an ultra-low 2.0 mOhm maximum RDS(on) at VGS=10 V, 120 A continuous ID at Tc, 300 W power dissipation at Tc, and an operating junction temperature range of -55C to +175C. The D2PAK-3 surface-mount package offers a low thermal resistance of approximately 0.5 C/W junction-to-case, enabling efficient heat extraction to the PCB copper pad. Avalanche-rated, logic-level capable, and qualified for industrial applications, it supports both hard-switched and soft-switched topologies.
Architecturally, the device uses Infineon's advanced OptiMOS 5 trench cell design, which minimizes cell pitch while optimizing the trade-off between on-resistance, gate charge (Qg), and output capacitance (Coss). Low Qg and low Qrr enable high-frequency switching up to several hundred kHz, while the optimized body diode supports synchronous rectification in half-bridge and full-bridge converters without excessive reverse-recovery loss.
Typical applications include 48 V telecom and server power supplies, synchronous rectification in LLC and phase-shifted full-bridge converters, motor control drives, solar inverters, and high-current OR-ing / hot-swap circuits. The wide SOA and avalanche rating also suit industrial battery management and e-mobility auxiliary systems.
When designing with this MOSFET, ensure the gate driver can source/sink sufficient peak current (typically >2 A) to rapidly charge and discharge the gate capacitance. For high-frequency operation, minimize the gate-loop and power-loop inductances by placing the driver and decoupling capacitor directly adjacent to the gate and source pins.
This page synthesizes distributor pricing, drop-in alternatives from the OptiMOS 5 family and competitor offerings, and practical design notes not consolidated on the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل IPB020N08N5ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPB020N08N5ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
IPB031N08N5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPT015N10NF2SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB021N10NM5LF2ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB081N06L3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC009NE2LS5IATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC028N06NSTATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTMFS5C430NL
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB020N08N5ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at Tc=25C | 120 A |
| Pulsed Drain Current (IDM) | 480 A |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Power Dissipation (PD) at Tc=25C | 300 W |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C |
| پیکیج | PG-TO263-3 (D2PAK-2) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Configuration | Single N-channel, 3-pin (2+Tab) |
| RoHS اسٹیٹس | Compliant |
IPB020N08N5ATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input; standard MOSFET gate terminal |
| پن 2 | Drain — Drain terminal; internally connected to the metal tab on the bottom of the package |
| پن 3 | Source — Source terminal; return path for drain current |
| پن TAB | Drain (Tab) — Exposed metal tab on package bottom - electrically the Drain, must be soldered to PCB thermal pad for heat dissipation |
محفوظ آپریٹنگ ایریا (SOA) - IPB020N08N5ATMA1
عام استعمالات
IPB020N08N5ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Telecom Synchronous Rectification, Server and Datacenter 12V/48V VRM Stages, Industrial Motor Control Drives, Solar Inverter DC-DC Boost Stages, Battery Management and Hot-Swap OR-ing, High-Current LED Lighting Drivers.
48V Telecom Synchronous Rectification
The IPB020N08N5ATMA1's 2.0 mOhm RDS(on) and 120 A continuous drain current make it ideal for the secondary-side synchronous rectifier MOSFET in 48 V telecom isolated DC-DC converters (e.g., quarter-brick or eighth-brick modules). At 60 A rectified current, the part dissipates roughly 7.2 W versus 18 W for a 5 mOhm predecessor, improving efficiency by 1-2 percentage points. The 80 V VDS rating provides comfortable margin above the 48V nominal bus with transient spikes to 60 V. The D2PAK-3 package enables top-side cooling via the exposed drain tab, simplifying thermal management in densely populated bricks. Designers should pair the device with a UCC24612 or similar synchronous rectifier controller and minimize the high-current loop inductance for best switching performance.
تجویز کردہ
Server and Datacenter 12V/48V VRM Stages
In server power delivery - from 48 V to 12 V intermediate bus converters to multi-phase 12 V VRMs - the IPB020N08N5ATMA1 shines as a high-current synchronous buck switch. Its 2.0 mOhm RDS(on) at VGS=10 V minimizes conduction loss at the 60-100 A phase currents typical in 48-to-12 V conversion stages, while the OptiMOS 5 cell geometry delivers low Qg for sub-100 ns switching transitions. The 80 V rating accommodates 48 V bus transients with substantial margin. The D2PAK-3 footprint offers thermal headroom when mounted on 2 oz copper with thermal vias, sustaining continuous currents above 50 A without exceeding 100C junction temperature. Designers can pair the device with digital controller ISL68137 or analog PWM controllers for closed-loop regulation.
تجویز کردہ
Industrial Motor Control Drives
The IPB020N08N5ATMA1 is well-suited for industrial BLDC and PMSM motor drives operating from 24-72 V DC bus rails. The 80 V rating handles 48 V nominal bus with substantial transient margin, while 120 A continuous drain current supports motor power levels up to approximately 4-5 kW per phase leg when paired with appropriate gate drivers. The OptiMOS 5 technology's low Qrr minimizes dead-time losses in the high-side/low-side switching leg, improving inverter efficiency by 0.5-1.0% versus older MOSFET generations. The D2PAK package's exposed tab enables direct PCB heatsink attachment or chassis-mount cooling for high-ambient industrial environments. Design tip: use isolated gate drivers like UCC21540 to switch the high-side safely up to 80 V bus.
تجویز کردہ
Solar Inverter DC-DC Boost Stages
In solar micro-inverters and string inverters, the IPB020N08N5ATMA1 serves as the main switching MOSFET in the boost PFC or DC-DC converter stage powered from the PV panel. Its 80 V rating covers open-circuit panel voltages up to approximately 60 V (24 V nominal systems) with 25% derating margin, while the 2.0 mOhm RDS(on) maximizes conversion efficiency across the wide load range of MPPT operation. The avalanche-rated design absorbs the energy from reverse-recovery and inductive kickback events inherent to boost topology. The 300 W power dissipation rating and D2PAK thermal performance support continuous operation at full panel power without external heatsinking in many designs, though a thermal interface to the inverter chassis is recommended for outdoor deployment.
تجویز کردہ
Battery Management and Hot-Swap OR-ing
The IPB020N08N5ATMA1 excels in 48 V battery management and OR-ing applications for redundant power systems in datacenter and telecom equipment. As an OR-ing MOSFET, its low 2.0 mOhm RDS(on) minimizes voltage drop and power dissipation across the redundant supply path - at 50 A load the drop is only 100 mV and dissipation 5 W, far better than diode-OR solutions. The 80 V rating handles 48 V battery systems with full transient margin. The D2PAK-3 footprint and 300 W dissipation rating support continuous high-current operation when properly heatsunk. For hot-swap controllers, pair the device with LM5069 or similar hot-swap ICs that manage inrush current and provide fault protection. The avalanche rating also suits battery disconnect switch applications.
تجویز کردہ
High-Current LED Lighting Drivers
For high-power LED lighting drivers in commercial and industrial applications (stage lighting, horticultural lighting, high-bay fixtures), the IPB020N08N5ATMA1 serves as the main switching element in constant-current buck or boost LED drivers. Its 2.0 mOhm RDS(on) at 80 V supports 48 V LED string architectures with currents up to several amps per string, minimizing thermal stress on the switching element and improving driver efficiency above 95%. The wide SOA and OptiMOS 5 ruggedness enable reliable operation in PWM-dimmed LED strings where high dV/dt stresses the MOSFET repeatedly. The D2PAK package allows for compact driver designs with adequate thermal performance. For LED driver, the part is often paired with PFC + LLC combo controllers for high-power lighting installations.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPB020N08N5ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPB031N08N5ATMA1 | IPT015N10NF2SATMA1 | IPB021N10NM5LF2ATMA1 | IPB081N06L3GATMA1 | BSC028N06NSTATMA1 | NTMFS5C430NL |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | D2PAK-equivalent (SO-8FL) - verify |
| Drain-Source Voltage (VDS) | 80 V | 80 V - same | 100 V (+25%) | 100 V (+25%) | 60 V (-25%) | 60 V (-25%) | 80 V - same |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | 3.1 mOhm (+55%) | 1.5 mOhm (-25%) | 2.1 mOhm (+5%) | 8.1 mOhm (+305%) | 2.8 mOhm (+40%) | Approximately 2.5 mOhm (verify per datasheet) |
| Technology | OptiMOS 5 (80V) | OptiMOS 5 (80V) | OptiMOS 5 (100V) | OptiMOS 5 (100V) | OptiMOS 3 (60V) | OptiMOS (60V) | onsemi process generation |
| Gate Threshold Type | Standard (10V VGS) | Standard (10V VGS) | Standard (10V VGS) | Standard (10V VGS) | Logic-level | Standard (10V VGS) | Standard (verify) |
| Operating Junction Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C (typical for this class) |
اہم امتیازی خصوصیات
- Lowest RDS(on) in 80V OptiMOS 5 D2PAK family (بمقابلہIPB031N08N5ATMA1)
- Lower RDS(on) at the same voltage class than typical competitors (بمقابلہNTMFS5C430NL (onsemi))
- 43% RDS(on) reduction vs previous generation OptiMOS (بمقابلہPrevious-gen OptiMOS 80V parts)
- Wide 80V VDS rating provides transient margin above 48V bus (بمقابلہ60V-class alternatives (IPB081N06L3G, BSC028N06NS))
ڈیزائن نوٹس
Estimated: at ID=50A continuous in a buck converter with VDS=48V nominal switching transients, the IPB020N08N5ATMA1 dissipates P = I^2 x RDS(on) = 50^2 x 0.002 = 5.0W average conduction loss, plus switching loss proportional to frequency. With RthJC approximately 0.5 C/W, the junction-to-case temperature rise is 5.0 x 0.5 = 2.5C. To maintain Tj below 125C, the case must be kept below approximately 122C, requiring the D2PAK exposed tab to be soldered to at least 1 square inch of 2 oz copper with thermal vias to inner planes. Without sufficient PCB copper, the device will derate significantly at high current.
Lay out the gate-drive loop (gate driver output -> gate resistor -> MOSFET gate -> source -> back to driver ground) as a tight, narrow loop with minimal area to reduce parasitic inductance. Use a gate resistor in the 2-10 ohm range to control ringing and limit peak gate current. Place the input bypass capacitor as close as possible between drain and source to minimize the high-current switching loop inductance. The exposed drain tab should be soldered to a large copper pad with multiple thermal vias (typically 9-16 vias of 0.3mm diameter) to inner-layer ground/power planes for optimal heat extraction.
Do not exceed VGS of +/-20V even briefly - the gate oxide is thin and ESD-sensitive. Use a gate-source pull-down resistor (10-100 kOhm) to prevent accidental turn-on from dV/dt-induced Miller coupling during the high-side turn-on transition. The D2PAK drain tab floats until soldered; handle with care during board assembly to avoid ESD damage. Verify peak drain current at startup inrush does not exceed the pulsed drain current rating (480A per datasheet) - add soft-start circuitry if necessary. Finally, derate VDS by at least 20% for unclamped inductive switching events to stay within avalanche ratings.
For high-frequency switching (>100 kHz), use a 4-layer PCB with dedicated ground and power planes. Keep the switching node (drain of low-side / source of high-side) physically small and surrounded by ground copper to minimize EMI radiation. Place the gate driver within 5mm of the MOSFET gate pin to limit parasitic gate-loop inductance. For synchronous rectification, parallel devices benefit from matched gate resistors and symmetric PCB layout to ensure current sharing. Use Kelvin-source connection for the gate driver return path when sourcing high peak gate currents.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Halogen-free per package datasheet. Not AEC-Q100 qualified - use IPP60R190C6 or AEC-Q100 grade variants for automotive. Conflict-minerals declaration available from Infineon.
