IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon
MPN: IAUCN08S7L110ATMA1 ✓ Hoạt độngIAUCN08S7L110ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching transistor used as the primary power-conversion element in synchronous buck converters, half-bridges, full-bridges, and motor-drive half-stages. Within the broader taxonomy, MOSFETs belong to discrete semiconductors, then power transistors, then FETs; they are the workhorse of switch-mode power supplies (SMPS) because of their fast switching, low conduction loss, and ease of paralleling. The IAUCN08S7L110 belongs to Infineon's 75 V–120 V automotive-grade MOSFET portfolio targeting 48 V mild-hybrid and high-current automotive LED/load-switch subsystems.
Key features include an 11 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, a continuous drain-current rating of 50 A (T<sub>j</sub>) and pulsed capability suitable for repetitive inrush events, an avalanche-rated single-pulse body diode, and an operating junction temperature range of -55 °C to +175 °C qualified to automotive reliability expectations. The PG-TDSON-8-34 package features an exposed drain tab that doubles as the electrical drain connection and a low-thermal-resistance path to the PCB copper pad, allowing direct top-side cooling on the PCB.
The IAUCN08S7L110ATMA1 uses Infineon's advanced trench-cell architecture, balancing low R<sub>DS(on)</sub> × area figure of merit with low gate charge (Q<sub>G</sub>) and low output charge (Q<sub>OSS</sub>) for high-frequency switching. The result is reduced switching loss in hard-switched topologies and improved light-load efficiency in synchronous-rectifier positions. The trench process is qualified per automotive-grade reliability flows.
Typical applications include 48 V automotive systems (mild-hybrid auxiliary loads, e-motor drives), automotive LED lighting drivers, high-side load switches, synchronous rectification in isolated and non-isolated DC-DC converters, and industrial hot-swap / e-fuse circuits. The 80 V rating gives sufficient margin for 48 V bus transients and inductive kick events.
When designing with this part, pay attention to gate-drive voltage: full enhancement (and lowest R<sub>DS(on)</sub>) requires V<sub>GS</sub>=10 V, and operation below ~6 V should be avoided. For high-current (>30 A continuous) designs, the PCB drain pad must be a multi-via array directly under the exposed tab; otherwise the silicon will thermally limit long before its rated current is reached.
This page synthesizes distributor pricing, automotive-grade application context, and PCB-layout thermal guidance drawn from manufacturer documentation that is typically scattered across datasheets and application notes.
Bộ thay thế dễ dàng lắp đặt cho IAUCN08S7L110ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN08S7L110ATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, MSL Level, Series, Drain-Source Voltage (VDS).
IAUCN08S7L033ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN10S5L110TATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN10S5L280DATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N037GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N04NM7VATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC076N04NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN08S7L110ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΩ |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | PG-TDSON-8-34 (TDSON-8) |
| Kiểu lắp đặt | Surface Mount |
| Technology | OptiMOS™ (Trench) |
| Trạng thái RoHS | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) |
| Polarity | Single N-Channel |
| Configuration | Single |
Cấu hình chân IAUCN08S7L110ATMA1
| Chân 1 | Source — Source connection (Kelvin source) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain connection (also exposed tab) |
| Chân 6 | Drain — Drain connection (also exposed tab) |
| Chân 7 | Drain — Drain connection (also exposed tab) |
| Chân 8 | Drain — Drain connection (also exposed tab) |
Khu vực hoạt động an toàn - IAUCN08S7L110ATMA1
Ứng dụng tiêu biểu
IAUCN08S7L110ATMA1 phù hợp cho 7 Áp dụngs: 48 V Automotive Mild-Hybrid Auxiliary Loads, Automotive LED Lighting Drivers, Synchronous Rectification in 48 V DC-DC Converters, High-Side Load Switches and Hot-Swap Circuits, Industrial 24 V–60 V Motor Drive Half-Bridge, eFuse and Battery Disconnect Units, Power OR-ing and Reverse-Polarity Protection.
48 V Automotive Mild-Hybrid Auxiliary Loads
IAUCN08S7L110ATMA1 is well-suited for 48 V mild-hybrid auxiliary loads. Its 80 V V_DS rating provides ample transient margin above the 48 V nominal bus (with load-dump spikes), while the 11 mΩ R_DS(on) at V_GS=10 V keeps conduction loss low at typical 10–25 A continuous loads such as electric power steering, brake boosters, and coolant pumps. Placed as a high-side switch driven by an Infineon EiceDRIVER gate IC, the MOSFET delivers >97% efficiency at full load. The TDSON-8 exposed drain tab allows PCB-direct cooling without an external heatsink.
Được đề xuất
Automotive LED Lighting Drivers
IAUCN08S7L110ATMA1 fits automotive LED headlamp and DRL driver stages where high-current PWM switching at 80 V is required. The 50 A continuous rating covers the inrush of large LED arrays at cold-start, while the OptiMOS trench cell gives low Q_G so the high-side FET can switch at >100 kHz with low transition loss. In a buck topology, the IAUCN08S7L110 dissipates less heat than standard MOSFETs, allowing smaller PCB footprints behind headlamp assemblies. The -55 °C to +175 °C junction range supports under-hood and headlamp thermal environments.
Được đề xuất
Synchronous Rectification in 48 V DC-DC Converters
IAUCN08S7L110ATMA1 works as the synchronous-rectifier FET in non-isolated 48 V-to-12 V buck converters for mild-hybrid power distribution. Its 11 mΩ R_DS(on) at full gate drive minimizes rectifier conduction loss, while low Q_OSS reduces dead-time loss during the switch-node transition. Paired with a primary-side IAUC120N06S5L015ATMA1 or similar 60 V FET, it delivers >95% efficiency across 5–30 A load. The TDSON-8 footprint allows both FETs to share the same land pattern, simplifying PCB layout.
Được đề xuất
High-Side Load Switches and Hot-Swap Circuits
IAUCN08S7L110ATMA1 is well-matched to high-side load-switch and hot-swap/e-fuse positions in 48 V industrial and automotive systems. Its 80 V V_DS, 50 A I_D, and avalanche-rated body diode handle the inrush of large capacitive loads (e.g., 1000 µF+) and inductive kick events on disconnect. Driven by a high-side gate driver such as IR2117PBF or BTS3028SDRATMA1, the MOSFET enables controlled dV/dt turn-on, inrush limiting, and fast fault isolation. Automotive AEC-Q101-grade reliability supports safety-critical e-fuse applications.
Được đề xuất
Industrial 24 V–60 V Motor Drive Half-Bridge
IAUCN08S7L110ATMA1 suits industrial 24 V–60 V brushed and BLDC motor-drive half-bridges. Two IAUCN08S7L110ATMA1 in a half-bridge configuration can switch at 25 kHz–50 kHz with low transition loss, driving motors up to 30 A continuous with proper PCB thermal design. The TDSON-8 footprint keeps the half-bridge compact, and the 175 °C junction rating tolerates the high thermal load of stall-current events. Pair with a three-phase gate driver such as 2EDL8033G4CXTMA1 or 6EDL04N02PRXUMA1 for full BLDC control.
Được đề xuất
eFuse and Battery Disconnect Units
IAUCN08S7L110ATMA1 fits 48 V battery disconnect units (BDU) and electronic fuse (eFuse) modules where fast fault clearance and low steady-state loss are both required. The 11 mΩ R_DS(on) keeps the BDU drop below 0.6 V at 50 A continuous, while the SOA allows short-circuit interruption in the millisecond range when paired with a current-sense amplifier and a fast gate driver. The 80 V V_DS rating covers 48 V nominal plus inductive transient overshoot during disconnect events.
Được đề xuất
Power OR-ing and Reverse-Polarity Protection
IAUCN08S7L110ATMA1 enables power OR-ing and reverse-polarity protection at 48 V bus inputs. Connected as a source-follower with the drain to the load and body-diode pointing forward, the FET blocks reverse current flow with a low forward drop (~11 mΩ × I_load) under normal operation. This eliminates the ~0.7 V Schottky diode loss common in 48 V OR-ing designs, reducing thermal dissipation by an order of magnitude at 20 A+ load. The 80 V rating comfortably covers 48 V nominal plus transient events.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN08S7L110ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN08S7L033ATMA1 | IAUCN10S5L110TATMA1 | IAUCN10S5L280DATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same |
| V_DS max | 80 V | 80 V (same) | 100 V (+25%) | 100 V (+25%) | 40 V (-50%) | 40 V (-50%) |
| R_DS(on) typ at V_GS=10V | 11 mΩ | 3.3 mΩ (lower) | 11 mΩ (same) | 28 mΩ (higher) | 1.1 mΩ (much lower) | 7.6 mΩ (lower) |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) |
| Technology Family | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) |
Bảo phân biệt quan trọng
- Balanced 80 V / 11 mΩ / low Q_G OptiMOS in compact TDSON-8 footprint (vsIAUC120N04S6N009ATMA1)
- Lower R_DS(on) class alternative available in same package (vsIAUCN08S7L033ATMA1)
- Higher-voltage drop-in for additional bus margin (vsIAUCN10S5L110TATMA1)
Ghi chú thiết kế
Estimated: at 25 A continuous drain current with R_DS(on) = 11 mΩ, conduction loss ≈ I² × R = 625 × 0.011 = 6.9 W. With TDSON-8 θJA ≈ 50 °C/W on a 1 oz 4-layer PCB with 1 sq-inch copper drain pad, junction rise ≈ 6.9 × 50 = 345 °C above ambient - above the 175 °C limit. To stay within SOA at >20 A continuous, use 2 sq-inch copper drain area and a 6×6 thermal-via array under the exposed tab, which drops θJA to ~35 °C/W and junction rise to ~240 °C - still over limit. For continuous >15 A applications, derate to ~50% of nominal or parallel two IAUCN08S7L110ATMA1 devices.
Place the TDSON-8-34 land pattern per the Infineon recommended footprint in the datasheet. Use a 6×6 array of 0.3 mm thermal vias in the drain pad, plugged or capped to prevent solder wicking during reflow. Source pins (1-3) should be routed as a Kelvin source if possible - separate the gate-drive return from the power-source return by a few millimeters to minimize source-inductance-induced gate-drive ringing. Keep gate-drive traces short (<10 mm) and surrounded by ground.
Do not operate the IAUCN08S7L110ATMA1 below V_GS = 6 V - partial enhancement dramatically increases R_DS(on) and causes thermal runaway. Always use a 10 V gate drive (or 8 V minimum). Avoid inductive kick events that exceed the datasheet avalanche energy (E_AS); for relay or motor switching, add a TVS or RC snubber across the drain-source. Finally, ensure the gate-source ESD protection - the gate is ESD-sensitive and a 10 kΩ gate resistor plus a TVS to ground is recommended in production designs.
Thông tin tuân thủ
Per Infineon product page, IAUCN08S7L110 belongs to the automotive-grade OptiMOS family (AEC-Q101 expected). RoHS and lead-free confirmed per distributor listings; halogen-free status not stated in available data and marked unknown.
