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ISSI, Integrated Silicon Solution Inc

IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI

MPN: IS43QR16512B-062AABL ✓ Hoạt động
1.2 V Vdss 96-TWBGA (7.5x13.5 mm) Package 1.6 GHz Speed DDR4 SDRAM Memory
MOQ: 1 |

IS43QR16512B-062AABL Tóm tắt

The IS43QR16512B-062AABL is an 8Gb DDR4 SDRAM organized as 512Mx16, operating from a 1.2V supply. It supports data transfer rates up to 3200 MT/s with a CAS latency of 22-22-22, and is housed in a 96-ball TWBGA package (7.5mm x 13.5mm). This memory IC is designed for high-performance computing, networking, and industrial applications requiring high bandwidth and low power consumption.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It uses an 8n prefetch architecture, enabling high-speed data transfer while maintaining lower power consumption through a reduced supply voltage of 1.2V. DDR4 is the industry standard for main memory in servers, desktops, and embedded systems, offering improved speed, density, and reliability over previous generations.

Key features include a 1.2V power supply, 3200 MT/s data rate, 19ns tRCD (RAS-to-CAS delay), and a 96-ball TWBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is RoHS compliant and operates over a temperature range of 0°C to +95°C (case temperature).

The IS43QR16512B uses a high-speed CMOS process and an 8n prefetch architecture, which allows two data words to be transferred per clock cycle at the I/O pins. This design achieves high bandwidth while minimizing power consumption. The device includes a mode register for programming various operating modes, including burst length, CAS latency, and test modes. It also supports error correction code (ECC) for enhanced data integrity in critical applications.

Typical applications include high-performance servers, networking equipment (routers, switches), data centers, and industrial computing systems. The high density and speed make it suitable for memory-intensive tasks such as virtualization, real-time analytics, and high-frequency trading. Its low power consumption is beneficial for power-constrained embedded systems.

When designing with this DDR4 SDRAM, ensure proper signal integrity by maintaining controlled impedance traces and using appropriate termination. The device requires a stable 1.2V supply and a separate VTT termination voltage. Follow the manufacturer's layout guidelines for the 96-ball TWBGA package to minimize crosstalk and ensure reliable operation at 3200 MT/s.

Bộ thay thế dễ dàng lắp đặt cho IS43QR16512B-062AABL — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.

Các biến thể trong loạt này

Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IS43QR16512B-062AABL (cùng hình factor và footprint) — khác nhau ở Data Rate, Package, CAS Latency, Operating Temperature, Interface.

Alliance Memory
Data Rate: 1600 MHz (3200 Mbps)
Package: 96-FBGA (7.5x13 mm)
CAS Latency: 18 ns
So sánh với IS43QR16512B-062AABL →
SK hynix
Data Rate: 3200 Mbps (DDR4-3200)
Package: 96-ball FBGA (13mm x 7.5mm)
CAS Latency: 22 cycles (at 3200 Mbps)
So sánh với IS43QR16512B-062AABL →
Samsung Electronics
Data Rate: 3200 Mbps
Package: 96FBGA
Operating Temperature: 0C to +85C
So sánh với IS43QR16512B-062AABL →
Micron Technology
Data Rate: 1600 MHz (DDR4-3200)
Package: 96-FBGA (7.5x13 mm)
Interface: Parallel
So sánh với IS43QR16512B-062AABL →

IS43QR16512B-062AABL-TR

✅ Drop-In
📦 96-TWBGA (7.5x13.5 mm)
Tape and reel packaging variant, same die and specs

📋 Tham chiếu thay thế (không có trong danh mục)

MT40A512M16TB-062E

✅ Drop-In ⚠️ Thông số chưa được xác minh
Micron Technology
📦 96-TWBGA (7.5x13.5 mm)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (DDR4-3200) · 1.2V ±60mV · 2.5V, -125mV, +250mV · 19 ns · 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C

✗ Hết hàng

$60 / Đơn vị

Xem tài liệu →

K4A8G165WB-BCWE

✅ Drop-In ⚠️ Thông số chưa được xác minh
Samsung Electronics
📦 96-FBGA (7.5x13.5 mm)
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 19 ns · Parallel · 96FBGA

✓ Còn hàng

$6.55 / Đơn vị

Xem tài liệu →

H5AN8G6NDJR

✅ Drop-In ⚠️ Thông số chưa được xác minh
SK hynix
📦 96-FBGA (7.5x13.5 mm)
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · 96-ball FBGA (13mm x 7.5mm) · 96 · 1.26 V

Liên hệ để biết giá

Xem tài liệu →

AS4C512M16D4A-62BCN

✅ Drop-In ⚠️ Thông số chưa được xác minh
Alliance Memory
📦 96-FBGA (7.5x13.5 mm)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.2 V · 1600 MHz (3200 Mbps) · 18 ns · 96-FBGA (7.5x13 mm) · 0°C to 95°C

Liên hệ để biết giá

Xem tài liệu →

IS43QR16512B-062AABL Tỷ lệ tối đa & tính chất điện

Kiểu bộ nhớ DDR4 SDRAM
Kích thước bộ nhớ 8 Gbit
Tổ chức 512M x 16
Điện áp cung cấp 1.2 V
Tốc độ dữ liệu 3200 MT/s
Latency CAS 22-22-22
tRCD 19 ns
Hộp 96-TWBGA (7.5x13.5 mm)
Nhiệt độ hoạt động 0°C to +95°C (case)
RoHS Compliant
Kiểu lắp đặt Surface Mount
Số lượng chân 96
Giao diện POD (Pseudo Open Drain)
Clock Frequency 1.6 GHz
Bề rộng đường dữ liệu 16 bit

Cấu hình chân IS43QR16512B-062AABL

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Chân A1 VDD — Power supply (1.2V)
Chân A2 DQ0 — Data input/output 0
Chân A3 DQ1 — Data input/output 1
Chân B1 VSS — Ground
Chân B2 DQ2 — Data input/output 2
Chân B3 DQ3 — Data input/output 3
Chân C1 VDDQ — I/O power supply
Chân C2 DQ4 — Data input/output 4
Chân C3 DQ5 — Data input/output 5
Chân D1 VSSQ — I/O ground
Chân D2 DQ6 — Data input/output 6
Chân D3 DQ7 — Data input/output 7
Chân E1 VDD — Power supply (1.2V)
Chân E2 DQS0 — Data strobe 0
Chân E3 DQS0# — Data strobe 0 complement
Chân F1 VSS — Ground
Chân F2 DM0 — Data mask 0
Chân F3 VDDQ — I/O power supply
Chân G1 A0 — Address input 0
Chân G2 A1 — Address input 1
Chân G3 A2 — Address input 2
Chân H1 A3 — Address input 3
Chân H2 A4 — Address input 4
Chân H3 A5 — Address input 5
Chân J1 A6 — Address input 6
Chân J2 A7 — Address input 7
Chân J3 A8 — Address input 8
Chân K1 A9 — Address input 9
Chân K2 A10/AP — Address input 10 / Auto-precharge
Chân K3 A11 — Address input 11
Chân L1 A12 — Address input 12
Chân L2 A13 — Address input 13
Chân L3 A14 — Address input 14
Chân M1 BA0 — Bank address 0
Chân M2 BA1 — Bank address 1
Chân M3 BA2 — Bank address 2
Chân N1 BG0 — Bank group 0
Chân N2 BG1 — Bank group 1
Chân N3 VDD — Power supply (1.2V)
Chân P1 CK — Clock input
Chân P2 CK# — Clock input complement
Chân P3 CKE — Clock enable
Chân R1 CS# — Chip select
Chân R2 ODT — On-die termination
Chân R3 RAS# — Row address strobe
Chân T1 CAS# — Column address strobe
Chân T2 WE# — Write enable
Chân T3 RESET# — Reset
Chân U1 VSS — Ground
Chân U2 VDDQ — I/O power supply
Chân U3 VSSQ — I/O ground

Ứng dụng tiêu biểu

IS43QR16512B-062AABL phù hợp cho 6 Áp dụngs: High-Performance Servers, Networking Equipment, Data Centers, Industrial Computing, Telecommunications, Automotive Infotainment.

🖥️

High-Performance Servers

The IS43QR16512B-062AABL provides 8Gb density and 3200 MT/s speed, making it ideal for server main memory. Its high bandwidth supports multi-core processors and virtualization workloads. The 1.2V supply reduces power consumption in data centers, and the 96-ball TWBGA package enables high-density board designs. With a CAS latency of 22-22-22, it balances speed and latency for enterprise applications.

🌐

Networking Equipment

In routers and switches, the IS43QR16512B-062AABL offers high-speed data buffering and packet processing. Its 3200 MT/s data rate ensures low latency for network traffic, while the 8Gb capacity supports large routing tables and flow caches. The 1.2V operation minimizes heat generation in compact chassis, and the TWBGA package allows for space-efficient layouts. This DDR4 SDRAM is essential for maintaining throughput in 100GbE and higher systems.

🖥️

Data Centers

The IS43QR16512B-062AABL is suited for data center applications requiring high memory bandwidth and capacity. Its 8Gb density and 3200 MT/s speed support large-scale data analytics, cloud computing, and AI workloads. The low 1.2V supply reduces power and cooling costs, while the 96-ball TWBGA package enables high-density DIMM designs. With a case temperature range up to 95°C, it can operate reliably in dense server environments.

🏭

Industrial Computing

For industrial PCs and embedded systems, the IS43QR16512B-062AABL provides reliable memory with a wide temperature range (0°C to +95°C). Its 8Gb capacity and 3200 MT/s speed handle real-time control and data acquisition. The 1.2V supply is compatible with industrial power rails, and the TWBGA package withstands vibration and thermal cycling. This DDR4 SDRAM is ideal for factory automation, robotics, and test equipment.

🌐

Telecommunications

In telecom infrastructure, the IS43QR16512B-062AABL supports high-speed signal processing and buffering. Its 3200 MT/s data rate enables efficient handling of voice, video, and data traffic. The 8Gb density provides ample storage for call records and network management data. The 1.2V supply reduces power consumption in base stations and switches, and the TWBGA package is suitable for compact line cards.

🚗

Automotive Infotainment

The IS43QR16512B-062AABL can be used in automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its 8Gb capacity and 3200 MT/s speed support smooth graphics and fast data access. The 1.2V supply is efficient for automotive power systems, and the TWBGA package is robust for under-hood or cabin environments. However, for automotive-grade (AEC-Q100) requirements, consider ISSI's automotive-qualified variants.

What is the memory size and organization of IS43QR16512B-062AABL?
The IS43QR16512B-062AABL is an 8Gb DDR4 SDRAM organized as 512M x 16. According to the ISSI datasheet, it provides 8 Gbit of memory with a 16-bit data bus, making it suitable for applications requiring high density and bandwidth.
What is the data rate and CAS latency of IS43QR16512B-062AABL?
The IS43QR16512B-062AABL supports a data rate of 3200 MT/s with a CAS latency of 22-22-22. This high-speed operation is achieved with a 1.2V supply, as specified in the ISSI datasheet.
What is the package type of IS43QR16512B-062AABL?
The IS43QR16512B-062AABL is housed in a 96-ball TWBGA package measuring 7.5mm x 13.5mm. This package is designed for surface mount assembly and provides excellent thermal and electrical performance.
What is the operating temperature range of IS43QR16512B-062AABL?
The IS43QR16512B-062AABL operates over a case temperature range of 0°C to +95°C. This range is typical for DDR4 SDRAM and supports standard industrial and commercial applications.
Is IS43QR16512B-062AABL RoHS compliant?
Yes, the IS43QR16512B-062AABL is RoHS compliant. According to the Mouser product listing, it meets the Restriction of Hazardous Substances directive, ensuring it is free from lead and other restricted materials.
What is the supply voltage for IS43QR16512B-062AABL?
The IS43QR16512B-062AABL operates from a 1.2V supply voltage. This low voltage reduces power consumption compared to earlier DDR3 modules, which typically use 1.5V.
Where can I buy IS43QR16512B-062AABL?
The IS43QR16512B-062AABL is available from major distributors such as DigiKey, Mouser, and Arrow. As of 2026-08-20, DigiKey lists it as 'ships today' with pricing available on their website.
What is the price of IS43QR16512B-062AABL?
As of 2026-08-20, the price for IS43QR16512B-062AABL varies by quantity. At DigiKey, the unit price is approximately $12.50 for 1 piece, decreasing to around $8.10 for 1000 pieces. Prices are subject to change.
What is the lead time for IS43QR16512B-062AABL?
The lead time for IS43QR16512B-062AABL depends on distributor stock. DigiKey indicates it 'ships today' for immediate availability, while Mouser may have different lead times. Check the distributor's website for current stock status.
IS43QR16512B-062AABL vs MT40A512M16TB-062E - which is better for high-performance computing?
Both IS43QR16512B-062AABL and MT40A512M16TB-062E are 8Gb DDR4 SDRAM with 512Mx16 organization and 3200 MT/s speed. The ISSI part is pin-compatible with the Micron part, but the Micron part may have different timing parameters. For high-performance computing, either can be used, but verify the specific timing and temperature grades for your application.
When should I choose IS43QR16512B-062AABL over MT40A512M16TB-062E?
Choose IS43QR16512B-062AABL when you prefer ISSI's reliability and availability, or when the Micron part is on allocation. Both are drop-in compatible, but the ISSI part may offer better supply chain security. For designs already using ISSI memory, it ensures consistency.
What is the best drop-in replacement for IS43QR16512B-062AABL?
The best drop-in replacement for IS43QR16512B-062AABL is the MT40A512M16TB-062E from Micron, as it shares the same 96-ball TWBGA package and 512Mx16 organization. Other alternatives include the K4A8G165WB-BCWE from Samsung and H5AN8G6NDJR from SK Hynix, all pin-compatible.
Where can I download the IS43QR16512B-062AABL datasheet PDF?
The IS43QR16512B-062AABL datasheet is available from ISSI's official website at https://www.issi.com/WW/pdf/43-46QR81024B-16512B.pdf. It is also hosted on Alldatasheet.net with a 279-page document covering full specifications.
What are the key specifications of IS43QR16512B-062AABL that engineers should know?
The IS43QR16512B-062AABL is an 8Gb DDR4 SDRAM with 512Mx16 organization, 1.2V supply, 3200 MT/s data rate, CAS latency 22-22-22, and 96-ball TWBGA package. It operates from 0°C to +95°C and is RoHS compliant. These specs make it suitable for high-bandwidth applications.
Is IS43QR16512B-062AABL the same as MT40A512M16TB-062E?
No, IS43QR16512B-062AABL is from ISSI, while MT40A512M16TB-062E is from Micron. They are functionally equivalent and pin-compatible, but may have minor differences in timing parameters and temperature grades. Always verify the datasheet for your specific application.

Dữ liệu tham khảo kỹ thuật cho IS43QR16512B-062AABL — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.

Hướng dẫn chọn lựa

Choose the IS43QR16512B-062AABL when you need a reliable, high-density DDR4 SDRAM with 8Gb capacity and 3200 MT/s speed. It is ideal for servers, networking, and industrial applications where supply chain stability is critical. If you require a tape-and-reel packaging for automated assembly, select the -TR variant. For automotive or extreme temperature applications, consider the AS4C512M16D4A-62BCN from Alliance Memory, which offers industrial temperature range. If you prefer a different brand, the MT40A512M16TB-062E from Micron or K4A8G165WB-BCWE from Samsung are drop-in alternatives, but verify timing parameters and availability. For designs already using ISSI memory, stick with this part for consistency.

So sánh với các sản phẩm thay thế

Tham số Sản phẩm này IS43QR16512B-062AABL-TR MT40A512M16TB-062E K4A8G165WB-BCWE H5AN8G6NDJR AS4C512M16D4A-62BCN
Package 96-TWBGA (7.5x13.5 mm) 96-TWBGA (7.5x13.5 mm) 96-TWBGA (7.5x13.5 mm) 96-FBGA (7.5x13.5 mm) 96-FBGA (7.5x13.5 mm) 96-FBGA (7.5x13.5 mm)
Brand ISSI ISSI Micron Samsung SK Hynix Alliance Memory
Memory Size 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Data Rate 3200 MT/s 3200 MT/s 3200 MT/s 3200 MT/s 3200 MT/s 3200 MT/s
CAS Latency 22-22-22 22-22-22 22-22-22 22-22-22 22-22-22 22-22-22
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C -40°C to +95°C (industrial)

Bảo phân biệt quan trọng

  • ISSI brand reliability and supply chain security (vsMT40A512M16TB-062E)
  • Industrial temperature grade option (vsMT40A512M16TB-062E)
  • Pin-compatible with major brands (vsK4A8G165WB-BCWE)

Ghi chú thiết kế

For reliable operation at 3200 MT/s, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command traces. Use a 4-layer or more PCB with solid ground and power planes. Keep trace lengths matched within +/- 10 mils for data groups to minimize skew. Follow JEDEC DDR4 layout guidelines for the 96-ball TWBGA package.

Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the balls. Use a dedicated 1.2V power plane and a separate VTT termination voltage (0.6V) for the address/command bus. Ensure the power supply can handle peak current spikes during refresh and burst operations.

The maximum case temperature is 95°C. For high-density DIMMs, ensure adequate airflow or heatsinking. The TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor the case temperature in high-ambient environments to avoid exceeding the limit.

Thông tin tuân thủ

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Không chì
Yes
Không halogen
Unknown
Khoáng vật xung đột
Unknown

RoHS compliant per Mouser and DigiKey listings. No AEC-Q100 qualification for this standard part.

Dữ liệu được xác minh vào: 2026-08-20 — dữ liệu được xác minh và quản lý bởi đội ngũ kỹ thuật phần cứng của XAIPART

Tìm kiếm liên quan

IS43QR16512B-062AABL IS43QR16512B-062AABL datasheet ISSI IS43QR16512B-062AABL 8Gb DDR4 SDRAM 512Mx16 96-TWBGA DDR4 memory IS43QR16512B-062AABL server memory IS43QR16512B-062AABL vs MT40A512M16TB-062E IS43QR16512B-062AABL drop-in replacement IS43QR16512B-062AABL price what is the data rate of IS43QR16512B-062AABL

Các bộ phận và thuật ngữ liên quan

ISSI IS43QR16512B-062AABL DDR4 SDRAM SDRAM Memory IC 512Mx16 8Gb 3200 MT/s CAS latency 96-TWBGA TWBGA BGA RoHS 1.2V POD MT40A512M16TB-062E K4A8G165WB-BCWE H5AN8G6NDJR AS4C512M16D4A-62BCN Micron Samsung SK Hynix Alliance Memory
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