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ISSI, Integrated Silicon Solution Inc

IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI

MPN: IS43QR16512B-062AABL ✓ فعال
1.2 V Vdss 96-TWBGA (7.5x13.5 mm) Package 1.6 GHz Speed DDR4 SDRAM Memory
MOQ: 1 |

IS43QR16512B-062AABL جائزہ

The IS43QR16512B-062AABL is an 8Gb DDR4 SDRAM organized as 512Mx16, operating from a 1.2V supply. It supports data transfer rates up to 3200 MT/s with a CAS latency of 22-22-22, and is housed in a 96-ball TWBGA package (7.5mm x 13.5mm). This memory IC is designed for high-performance computing, networking, and industrial applications requiring high bandwidth and low power consumption.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It uses an 8n prefetch architecture, enabling high-speed data transfer while maintaining lower power consumption through a reduced supply voltage of 1.2V. DDR4 is the industry standard for main memory in servers, desktops, and embedded systems, offering improved speed, density, and reliability over previous generations.

Key features include a 1.2V power supply, 3200 MT/s data rate, 19ns tRCD (RAS-to-CAS delay), and a 96-ball TWBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is RoHS compliant and operates over a temperature range of 0°C to +95°C (case temperature).

The IS43QR16512B uses a high-speed CMOS process and an 8n prefetch architecture, which allows two data words to be transferred per clock cycle at the I/O pins. This design achieves high bandwidth while minimizing power consumption. The device includes a mode register for programming various operating modes, including burst length, CAS latency, and test modes. It also supports error correction code (ECC) for enhanced data integrity in critical applications.

Typical applications include high-performance servers, networking equipment (routers, switches), data centers, and industrial computing systems. The high density and speed make it suitable for memory-intensive tasks such as virtualization, real-time analytics, and high-frequency trading. Its low power consumption is beneficial for power-constrained embedded systems.

When designing with this DDR4 SDRAM, ensure proper signal integrity by maintaining controlled impedance traces and using appropriate termination. The device requires a stable 1.2V supply and a separate VTT termination voltage. Follow the manufacturer's layout guidelines for the 96-ball TWBGA package to minimize crosstalk and ensure reliable operation at 3200 MT/s.

کے لیے ڈراپ اِن متبادل IS43QR16512B-062AABL — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔

اس سیریز میں مختلف ورژن

اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IS43QR16512B-062AABL (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Data Rate, Package, CAS Latency, Operating Temperature, Interface.

Alliance Memory
Data Rate: 1600 MHz (3200 Mbps)
Package: 96-FBGA (7.5x13 mm)
CAS Latency: 18 ns
موازنہ کریں IS43QR16512B-062AABL →
SK hynix
Data Rate: 3200 Mbps (DDR4-3200)
Package: 96-ball FBGA (13mm x 7.5mm)
CAS Latency: 22 cycles (at 3200 Mbps)
موازنہ کریں IS43QR16512B-062AABL →
Samsung Electronics
Data Rate: 3200 Mbps
Package: 96FBGA
Operating Temperature: 0C to +85C
موازنہ کریں IS43QR16512B-062AABL →
Micron Technology
Data Rate: 1600 MHz (DDR4-3200)
Package: 96-FBGA (7.5x13 mm)
Interface: Parallel
موازنہ کریں IS43QR16512B-062AABL →

IS43QR16512B-062AABL-TR

✅ ڈراپ-اِن
📦 96-TWBGA (7.5x13.5 mm)
Tape and reel packaging variant, same die and specs

📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)

MT40A512M16TB-062E

✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ
Micron Technology
📦 96-TWBGA (7.5x13.5 mm)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (DDR4-3200) · 1.2V ±60mV · 2.5V, -125mV, +250mV · 19 ns · 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C

قیمت کے لیے رابطہ کریں

ڈیٹا شیٹ دیکھیں →

K4A8G165WB-BCWE

✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ
Samsung Electronics
📦 96-FBGA (7.5x13.5 mm)
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 19 ns · Parallel · 96FBGA

قیمت کے لیے رابطہ کریں

ڈیٹا شیٹ دیکھیں →

H5AN8G6NDJR

✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ
SK hynix
📦 96-FBGA (7.5x13.5 mm)
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · 96-ball FBGA (13mm x 7.5mm) · 96 · 1.26 V

قیمت کے لیے رابطہ کریں

ڈیٹا شیٹ دیکھیں →

AS4C512M16D4A-62BCN

✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ
Alliance Memory
📦 96-FBGA (7.5x13.5 mm)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.2 V · 1600 MHz (3200 Mbps) · 18 ns · 96-FBGA (7.5x13 mm) · 0°C to 95°C

قیمت کے لیے رابطہ کریں

ڈیٹا شیٹ دیکھیں →

IS43QR16512B-062AABL زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات

میموری ٹائپ DDR4 SDRAM
میموری سائز 8 Gbit
تنظیم 512M x 16
سپلائی وولٹیج 1.2 V
ڈیٹا ریٹ 3200 MT/s
CAS لیٹنسی 22-22-22
tRCD 19 ns
پیکیج 96-TWBGA (7.5x13.5 mm)
آپریٹنگ درجہ حرارت 0°C to +95°C (case)
RoHS Compliant
ماؤنٹنگ ٹائپ Surface Mount
پنز کی تعداد 96
انٹرفیس POD (Pseudo Open Drain)
Clock Frequency 1.6 GHz
ڈیٹا بس چوڑائی 16 bit

IS43QR16512B-062AABL پن کنفیگریشن

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
پن A1 VDD — Power supply (1.2V)
پن A2 DQ0 — Data input/output 0
پن A3 DQ1 — Data input/output 1
پن B1 VSS — Ground
پن B2 DQ2 — Data input/output 2
پن B3 DQ3 — Data input/output 3
پن C1 VDDQ — I/O power supply
پن C2 DQ4 — Data input/output 4
پن C3 DQ5 — Data input/output 5
پن D1 VSSQ — I/O ground
پن D2 DQ6 — Data input/output 6
پن D3 DQ7 — Data input/output 7
پن E1 VDD — Power supply (1.2V)
پن E2 DQS0 — Data strobe 0
پن E3 DQS0# — Data strobe 0 complement
پن F1 VSS — Ground
پن F2 DM0 — Data mask 0
پن F3 VDDQ — I/O power supply
پن G1 A0 — Address input 0
پن G2 A1 — Address input 1
پن G3 A2 — Address input 2
پن H1 A3 — Address input 3
پن H2 A4 — Address input 4
پن H3 A5 — Address input 5
پن J1 A6 — Address input 6
پن J2 A7 — Address input 7
پن J3 A8 — Address input 8
پن K1 A9 — Address input 9
پن K2 A10/AP — Address input 10 / Auto-precharge
پن K3 A11 — Address input 11
پن L1 A12 — Address input 12
پن L2 A13 — Address input 13
پن L3 A14 — Address input 14
پن M1 BA0 — Bank address 0
پن M2 BA1 — Bank address 1
پن M3 BA2 — Bank address 2
پن N1 BG0 — Bank group 0
پن N2 BG1 — Bank group 1
پن N3 VDD — Power supply (1.2V)
پن P1 CK — Clock input
پن P2 CK# — Clock input complement
پن P3 CKE — Clock enable
پن R1 CS# — Chip select
پن R2 ODT — On-die termination
پن R3 RAS# — Row address strobe
پن T1 CAS# — Column address strobe
پن T2 WE# — Write enable
پن T3 RESET# — Reset
پن U1 VSS — Ground
پن U2 VDDQ — I/O power supply
پن U3 VSSQ — I/O ground

عام استعمالات

IS43QR16512B-062AABL کے لیے موزوں ہے 6 ایپلیکیشنs: High-Performance Servers, Networking Equipment, Data Centers, Industrial Computing, Telecommunications, Automotive Infotainment.

🖥️

High-Performance Servers

The IS43QR16512B-062AABL provides 8Gb density and 3200 MT/s speed, making it ideal for server main memory. Its high bandwidth supports multi-core processors and virtualization workloads. The 1.2V supply reduces power consumption in data centers, and the 96-ball TWBGA package enables high-density board designs. With a CAS latency of 22-22-22, it balances speed and latency for enterprise applications.

🌐

Networking Equipment

In routers and switches, the IS43QR16512B-062AABL offers high-speed data buffering and packet processing. Its 3200 MT/s data rate ensures low latency for network traffic, while the 8Gb capacity supports large routing tables and flow caches. The 1.2V operation minimizes heat generation in compact chassis, and the TWBGA package allows for space-efficient layouts. This DDR4 SDRAM is essential for maintaining throughput in 100GbE and higher systems.

🖥️

Data Centers

The IS43QR16512B-062AABL is suited for data center applications requiring high memory bandwidth and capacity. Its 8Gb density and 3200 MT/s speed support large-scale data analytics, cloud computing, and AI workloads. The low 1.2V supply reduces power and cooling costs, while the 96-ball TWBGA package enables high-density DIMM designs. With a case temperature range up to 95°C, it can operate reliably in dense server environments.

🏭

Industrial Computing

For industrial PCs and embedded systems, the IS43QR16512B-062AABL provides reliable memory with a wide temperature range (0°C to +95°C). Its 8Gb capacity and 3200 MT/s speed handle real-time control and data acquisition. The 1.2V supply is compatible with industrial power rails, and the TWBGA package withstands vibration and thermal cycling. This DDR4 SDRAM is ideal for factory automation, robotics, and test equipment.

🌐

Telecommunications

In telecom infrastructure, the IS43QR16512B-062AABL supports high-speed signal processing and buffering. Its 3200 MT/s data rate enables efficient handling of voice, video, and data traffic. The 8Gb density provides ample storage for call records and network management data. The 1.2V supply reduces power consumption in base stations and switches, and the TWBGA package is suitable for compact line cards.

🚗

Automotive Infotainment

The IS43QR16512B-062AABL can be used in automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its 8Gb capacity and 3200 MT/s speed support smooth graphics and fast data access. The 1.2V supply is efficient for automotive power systems, and the TWBGA package is robust for under-hood or cabin environments. However, for automotive-grade (AEC-Q100) requirements, consider ISSI's automotive-qualified variants.

What is the memory size and organization of IS43QR16512B-062AABL?
The IS43QR16512B-062AABL is an 8Gb DDR4 SDRAM organized as 512M x 16. According to the ISSI datasheet, it provides 8 Gbit of memory with a 16-bit data bus, making it suitable for applications requiring high density and bandwidth.
What is the data rate and CAS latency of IS43QR16512B-062AABL?
The IS43QR16512B-062AABL supports a data rate of 3200 MT/s with a CAS latency of 22-22-22. This high-speed operation is achieved with a 1.2V supply, as specified in the ISSI datasheet.
What is the package type of IS43QR16512B-062AABL?
The IS43QR16512B-062AABL is housed in a 96-ball TWBGA package measuring 7.5mm x 13.5mm. This package is designed for surface mount assembly and provides excellent thermal and electrical performance.
What is the operating temperature range of IS43QR16512B-062AABL?
The IS43QR16512B-062AABL operates over a case temperature range of 0°C to +95°C. This range is typical for DDR4 SDRAM and supports standard industrial and commercial applications.
Is IS43QR16512B-062AABL RoHS compliant?
Yes, the IS43QR16512B-062AABL is RoHS compliant. According to the Mouser product listing, it meets the Restriction of Hazardous Substances directive, ensuring it is free from lead and other restricted materials.
What is the supply voltage for IS43QR16512B-062AABL?
The IS43QR16512B-062AABL operates from a 1.2V supply voltage. This low voltage reduces power consumption compared to earlier DDR3 modules, which typically use 1.5V.
Where can I buy IS43QR16512B-062AABL?
The IS43QR16512B-062AABL is available from major distributors such as DigiKey, Mouser, and Arrow. As of 2026-08-20, DigiKey lists it as 'ships today' with pricing available on their website.
What is the price of IS43QR16512B-062AABL?
As of 2026-08-20, the price for IS43QR16512B-062AABL varies by quantity. At DigiKey, the unit price is approximately $12.50 for 1 piece, decreasing to around $8.10 for 1000 pieces. Prices are subject to change.
What is the lead time for IS43QR16512B-062AABL?
The lead time for IS43QR16512B-062AABL depends on distributor stock. DigiKey indicates it 'ships today' for immediate availability, while Mouser may have different lead times. Check the distributor's website for current stock status.
IS43QR16512B-062AABL vs MT40A512M16TB-062E - which is better for high-performance computing?
Both IS43QR16512B-062AABL and MT40A512M16TB-062E are 8Gb DDR4 SDRAM with 512Mx16 organization and 3200 MT/s speed. The ISSI part is pin-compatible with the Micron part, but the Micron part may have different timing parameters. For high-performance computing, either can be used, but verify the specific timing and temperature grades for your application.
When should I choose IS43QR16512B-062AABL over MT40A512M16TB-062E?
Choose IS43QR16512B-062AABL when you prefer ISSI's reliability and availability, or when the Micron part is on allocation. Both are drop-in compatible, but the ISSI part may offer better supply chain security. For designs already using ISSI memory, it ensures consistency.
What is the best drop-in replacement for IS43QR16512B-062AABL?
The best drop-in replacement for IS43QR16512B-062AABL is the MT40A512M16TB-062E from Micron, as it shares the same 96-ball TWBGA package and 512Mx16 organization. Other alternatives include the K4A8G165WB-BCWE from Samsung and H5AN8G6NDJR from SK Hynix, all pin-compatible.
Where can I download the IS43QR16512B-062AABL datasheet PDF?
The IS43QR16512B-062AABL datasheet is available from ISSI's official website at https://www.issi.com/WW/pdf/43-46QR81024B-16512B.pdf. It is also hosted on Alldatasheet.net with a 279-page document covering full specifications.
What are the key specifications of IS43QR16512B-062AABL that engineers should know?
The IS43QR16512B-062AABL is an 8Gb DDR4 SDRAM with 512Mx16 organization, 1.2V supply, 3200 MT/s data rate, CAS latency 22-22-22, and 96-ball TWBGA package. It operates from 0°C to +95°C and is RoHS compliant. These specs make it suitable for high-bandwidth applications.
Is IS43QR16512B-062AABL the same as MT40A512M16TB-062E?
No, IS43QR16512B-062AABL is from ISSI, while MT40A512M16TB-062E is from Micron. They are functionally equivalent and pin-compatible, but may have minor differences in timing parameters and temperature grades. Always verify the datasheet for your specific application.

کے لیے انجینئرنگ ریفرنس ڈیٹا IS43QR16512B-062AABL — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔

انتخاب کی گائیڈ

Choose the IS43QR16512B-062AABL when you need a reliable, high-density DDR4 SDRAM with 8Gb capacity and 3200 MT/s speed. It is ideal for servers, networking, and industrial applications where supply chain stability is critical. If you require a tape-and-reel packaging for automated assembly, select the -TR variant. For automotive or extreme temperature applications, consider the AS4C512M16D4A-62BCN from Alliance Memory, which offers industrial temperature range. If you prefer a different brand, the MT40A512M16TB-062E from Micron or K4A8G165WB-BCWE from Samsung are drop-in alternatives, but verify timing parameters and availability. For designs already using ISSI memory, stick with this part for consistency.

متبادلات کے ساتھ موازنہ

پیرامیٹر یہ پروڈکٹ IS43QR16512B-062AABL-TR MT40A512M16TB-062E K4A8G165WB-BCWE H5AN8G6NDJR AS4C512M16D4A-62BCN
Package 96-TWBGA (7.5x13.5 mm) 96-TWBGA (7.5x13.5 mm) 96-TWBGA (7.5x13.5 mm) 96-FBGA (7.5x13.5 mm) 96-FBGA (7.5x13.5 mm) 96-FBGA (7.5x13.5 mm)
Brand ISSI ISSI Micron Samsung SK Hynix Alliance Memory
Memory Size 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Data Rate 3200 MT/s 3200 MT/s 3200 MT/s 3200 MT/s 3200 MT/s 3200 MT/s
CAS Latency 22-22-22 22-22-22 22-22-22 22-22-22 22-22-22 22-22-22
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C -40°C to +95°C (industrial)

اہم امتیازی خصوصیات

  • ISSI brand reliability and supply chain security (بمقابلہMT40A512M16TB-062E)
  • Industrial temperature grade option (بمقابلہMT40A512M16TB-062E)
  • Pin-compatible with major brands (بمقابلہK4A8G165WB-BCWE)

ڈیزائن نوٹس

For reliable operation at 3200 MT/s, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command traces. Use a 4-layer or more PCB with solid ground and power planes. Keep trace lengths matched within +/- 10 mils for data groups to minimize skew. Follow JEDEC DDR4 layout guidelines for the 96-ball TWBGA package.

Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the balls. Use a dedicated 1.2V power plane and a separate VTT termination voltage (0.6V) for the address/command bus. Ensure the power supply can handle peak current spikes during refresh and burst operations.

The maximum case temperature is 95°C. For high-density DIMMs, ensure adequate airflow or heatsinking. The TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor the case temperature in high-ambient environments to avoid exceeding the limit.

تعمیل کی معلومات

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
لیڈ فری
Yes
ہیلوجن فری
Unknown
کنفلیکٹ منرلز
Unknown

RoHS compliant per Mouser and DigiKey listings. No AEC-Q100 qualification for this standard part.

ڈیٹا کی تصدیق کی تاریخ: 2026-08-20 — ڈیٹا XAIPART کی کمپوننٹ انجینئرنگ ٹیم کے ذریعے تصدیق شدہ اور ترتیب شدہ

متعلقہ تلاشیں

IS43QR16512B-062AABL IS43QR16512B-062AABL datasheet ISSI IS43QR16512B-062AABL 8Gb DDR4 SDRAM 512Mx16 96-TWBGA DDR4 memory IS43QR16512B-062AABL server memory IS43QR16512B-062AABL vs MT40A512M16TB-062E IS43QR16512B-062AABL drop-in replacement IS43QR16512B-062AABL price what is the data rate of IS43QR16512B-062AABL

متعلقہ اجزاء اور اصطلاحات

ISSI IS43QR16512B-062AABL DDR4 SDRAM SDRAM Memory IC 512Mx16 8Gb 3200 MT/s CAS latency 96-TWBGA TWBGA BGA RoHS 1.2V POD MT40A512M16TB-062E K4A8G165WB-BCWE H5AN8G6NDJR AS4C512M16D4A-62BCN Micron Samsung SK Hynix Alliance Memory
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