H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
MPN: H5AN8G6NDJR ✓ Hoạt độngH5AN8G6NDJR Tóm tắt
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments.
The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations.
Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Bộ thay thế dễ dàng lắp đặt cho H5AN8G6NDJR — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với H5AN8G6NDJR (cùng hình factor và footprint) — khác nhau ở Package, Data Rate, Operating Temperature, Memory Size, Burst Length.
H5AN8G6NDJR-XNC
✅ Drop-In✗ Hết hàng
$55.6818 / Đơn vị
Xem tài liệu →H5AN8G6NCJR-xxC
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K4A8G165WB-BCTD
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$37 / Đơn vị
Xem tài liệu →MT40A512M16TB-062E:R
✅ Drop-In ⚠️ Thông số chưa được xác minh✓ Còn hàng
$60 / Đơn vị
Xem tài liệu →K4A8G165WB-BCRC
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$12.57 / Đơn vị
Xem tài liệu →MT40A512M16TB-062E:IT
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
H5AN8G6NDJR Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Density | 8 Gb |
| Tổ chức | 512M x 16 |
| Tốc độ dữ liệu | 3200 Mbps (DDR4-3200) |
| Điện áp cung cấp | 1.2 V |
| Hộp | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V |
| Maximum Operating Temperature | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) |
| Latency CAS | 22 cycles (at 3200 Mbps) |
| Access Mode | Multi Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 |
| RoHS | Compliant |
| Tính năng | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
Cấu hình chân H5AN8G6NDJR
| Chân A1 | VDD — Power supply (1.2V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDD — Power supply (1.2V) |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VDD — Power supply (1.2V) |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VDD — Power supply (1.2V) |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDD — Power supply (1.2V) |
| Chân C2 | DQS0 — Data strobe 0 |
| Chân C3 | DQS0# — Data strobe 0 complement |
| Chân C4 | VSS — Ground |
| Chân C5 | DQS1 — Data strobe 1 |
| Chân C6 | DQS1# — Data strobe 1 complement |
| Chân C7 | VDD — Power supply (1.2V) |
| Chân C8 | DQS2 — Data strobe 2 |
| Chân C9 | DQS2# — Data strobe 2 complement |
| Chân C10 | VSS — Ground |
| Chân C11 | DQS3 — Data strobe 3 |
| Chân C12 | DQS3# — Data strobe 3 complement |
| Chân D1 | VSS — Ground |
| Chân D2 | DM0 — Data mask 0 |
| Chân D3 | DM1 — Data mask 1 |
| Chân D4 | VDD — Power supply (1.2V) |
| Chân D5 | DM2 — Data mask 2 |
| Chân D6 | DM3 — Data mask 3 |
| Chân D7 | VSS — Ground |
| Chân D8 | A0 — Address input 0 |
| Chân D9 | A1 — Address input 1 |
| Chân D10 | VDD — Power supply (1.2V) |
| Chân D11 | A2 — Address input 2 |
| Chân D12 | A3 — Address input 3 |
| Chân E1 | VDD — Power supply (1.2V) |
| Chân E2 | A4 — Address input 4 |
| Chân E3 | A5 — Address input 5 |
| Chân E4 | VSS — Ground |
| Chân E5 | A6 — Address input 6 |
| Chân E6 | A7 — Address input 7 |
| Chân E7 | VDD — Power supply (1.2V) |
| Chân E8 | A8 — Address input 8 |
| Chân E9 | A9 — Address input 9 |
| Chân E10 | VSS — Ground |
| Chân E11 | A10/AP — Address input 10 / auto precharge |
| Chân E12 | A11 — Address input 11 |
| Chân F1 | VSS — Ground |
| Chân F2 | A12 — Address input 12 |
| Chân F3 | A13 — Address input 13 |
| Chân F4 | VDD — Power supply (1.2V) |
| Chân F5 | A14 — Address input 14 |
| Chân F6 | A15 — Address input 15 |
| Chân F7 | VSS — Ground |
| Chân F8 | BA0 — Bank address 0 |
| Chân F9 | BA1 — Bank address 1 |
| Chân F10 | VDD — Power supply (1.2V) |
| Chân F11 | BA2 — Bank address 2 |
| Chân F12 | BG0 — Bank group 0 |
| Chân G1 | VDD — Power supply (1.2V) |
| Chân G2 | BG1 — Bank group 1 |
| Chân G3 | CK — Clock input |
| Chân G4 | CK# — Clock input complement |
| Chân G5 | VSS — Ground |
| Chân G6 | CKE — Clock enable |
| Chân G7 | VDD — Power supply (1.2V) |
| Chân G8 | CS# — Chip select |
| Chân G9 | RAS# — Row address strobe |
| Chân G10 | VSS — Ground |
| Chân G11 | CAS# — Column address strobe |
| Chân G12 | WE# — Write enable |
| Chân H1 | VSS — Ground |
| Chân H2 | ODT0 — On-die termination 0 |
| Chân H3 | ODT1 — On-die termination 1 |
| Chân H4 | VDD — Power supply (1.2V) |
| Chân H5 | RESET# — Asynchronous reset |
| Chân H6 | VSS — Ground |
| Chân H7 | VDD — Power supply (1.2V) |
| Chân H8 | ZQ — ZQ calibration |
| Chân H9 | VSS — Ground |
| Chân H10 | VDD — Power supply (1.2V) |
| Chân H11 | VSS — Ground |
| Chân H12 | VDD — Power supply (1.2V) |
Ứng dụng tiêu biểu
H5AN8G6NDJR phù hợp cho 6 Áp dụngs: Server Main Memory, Networking Equipment, Industrial Control Systems, High-Performance Computing, Embedded Systems, Data Center Storage.
Server Main Memory
The H5AN8G6NDJR provides 8Gb density and 3200 Mbps bandwidth, making it ideal for server main memory. Its high speed and low power (1.2V) enhance server performance and energy efficiency. In a server DIMM, multiple devices are combined to achieve the desired capacity and ECC support. The x16 organization allows for high bandwidth per chip, reducing the number of devices needed for a given capacity. The device's auto self-refresh and dynamic ODT features improve signal integrity and reliability in multi-rank configurations. When designing server memory, ensure proper termination and layout to maintain signal integrity at 3200 Mbps.
Được đề xuất
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G6NDJR provides high-bandwidth memory for packet buffering and forwarding tables. Its 3200 Mbps data rate ensures fast processing of network traffic, while the 1.2V supply reduces power consumption in always-on equipment. The device's CRC feature enhances data integrity, critical for network reliability. The compact FBGA-96 package allows for dense PCB layouts, saving board space. When used in networking designs, consider the thermal environment and ensure adequate cooling to maintain the 0°C to 85°C operating range.
Được đề xuất
Industrial Control Systems
The H5AN8G6NDJR is suitable for industrial control systems requiring reliable, high-density memory. Its wide operating temperature range (0°C to 85°C) and features like auto self-refresh and write leveling ensure stable operation in harsh environments. The device's low power consumption is beneficial for systems with limited power budgets. In industrial applications, the memory is often used for data logging, real-time control, and HMI interfaces. The FBGA-96 package is robust and suitable for vibration-prone environments. Designers should ensure proper power decoupling and follow layout guidelines to minimize noise.
Được đề xuất
High-Performance Computing
In HPC systems, the H5AN8G6NDJR delivers the high bandwidth and capacity needed for complex simulations and data analysis. Its 3200 Mbps data rate and 8Gb density enable large memory pools with fast access times. The device's low latency and high throughput are critical for parallel processing workloads. The x16 organization allows for efficient memory channel utilization. When designing HPC memory subsystems, consider the total memory bandwidth and capacity requirements, and ensure the memory controller supports the device's timing parameters.
Được đề xuất
Embedded Systems
The H5AN8G6NDJR is used in embedded systems requiring high-density memory with low power consumption. Its 1.2V supply and auto self-refresh feature help extend battery life in portable devices. The compact FBGA-96 package is ideal for space-constrained designs. The device's features like data mask and write leveling support reliable operation in embedded applications. When integrating this memory, ensure the host processor's memory controller is compatible with DDR4-3200 and the x16 organization.
Được đề xuất
Data Center Storage
In data center storage systems, the H5AN8G6NDJR provides high-speed memory for caching and metadata management. Its high bandwidth and low latency improve storage performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's CRC feature ensures data integrity, critical for storage reliability. The FBGA-96 package allows for high-density memory modules, maximizing storage capacity per server. When designing storage systems, consider the memory requirements for caching algorithms and ensure adequate cooling.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho H5AN8G6NDJR — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | MT40A512M16TB-062E:R |
|---|---|---|---|---|
| Package | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) |
| Brand | SK hynix | SK hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- High density and bandwidth (vsK4A8G165WB-BCTD)
- Advanced features (vsMT40A512M16TB-062E:R)
- Low power consumption (vsK4A8G165WB-BCTD)
Ghi chú thiết kế
For DDR4-3200 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Use ground planes beneath the memory device to minimize noise. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the SK hynix datasheet for signal integrity.
The H5AN8G6NDJR operates up to 85°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-power applications, consider thermal vias under the package.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Verify that the memory controller supports DDR4-3200 and the x16 organization. Incorrect termination or missing ZQ resistor can cause signal integrity issues.
Thông tin tuân thủ
RoHS compliant per LCSC and JLCPCB listings. Other compliance data not specified in verified sources.
