ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon
MPN: ISC033N03LF2SATMA1 ✓ Hoạt độngISC033N03LF2SATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch in which applying a gate-source voltage above the threshold (here, typically 2.35 V max) creates a conductive inversion layer between drain and source. N-channel devices such as this one are the workhorses of low-voltage power conversion, sitting in the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> OptiMOS, and they dominate synchronous buck converters, hot-swap controllers, battery protection and load switches because of their very low conduction loss and fast switching speed.
The headline electrical specifications are 30 V VDS, 108 A ID at TC, 3.3 mOhm maximum RDS(on) at VGS = 10 V, and 71 W power dissipation at TC. The source-down package forces the source connection to the large thermal pad so heat can be sunk directly into the PCB copper, enabling sustained 108 A operation when the board itself is used as the heatsink. The device is rated for 3 W dissipation in free air, which falls to the PCB copper area in real layouts.
Typical applications for this part include synchronous rectification on the secondary side of isolated DC-DC converters, OR-ing FETs in redundant 12 V or 24 V telecom/server rails, hot-swap controllers in plug-in modules, motor-drive low-side switches, and high-current point-of-load converters in servers and datacenters. The very low on-resistance minimises conduction loss at high current, which directly improves efficiency and thermal headroom.
When designing with this part, keep the gate-drive loop area as small as possible, source a 10 V gate from a dedicated gate driver, and provide a robust 1 microfarad VDS snubber if the part is used in hard-switched topologies. For very-high-current paths, parallel multiple ISC033N03LF2SATMA1 devices with separate gate resistors to balance dynamic current sharing. This page synthesises distributor pricing, parametric proximity to Infineon same-family parts and cross-brand drop-in candidates, plus practical layout guidance not found in the Infineon datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho ISC033N03LF2SATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC033N03LF2SATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Product Family.
ISC028N03LF2SATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC011N04NM7VATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC045N03L5SATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC151N08NM6ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC033N03LF2SATMA1-VB
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC076N04NDATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →ISC033N03LF2SATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 |
| Part Family | OptiMOS LF2 (<= 40V) |
| Kiểu transitor | N-Channel MOSFET |
| Technology | OptiMOS trench (<= 40V) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TC | 108 A |
| Continuous Drain Current (ID) at TA | 22 A |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V |
| Gate Threshold Voltage VGS(th) typ | 2.35 V |
| Power Dissipation (PD) at TA | 3 W |
| Power Dissipation (PD) at TC | 71 W |
| Hộp | PG-TDSON-8-62 (Source-Down, 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Configuration | Single N-channel, source-down |
| Trạng thái RoHS | Compliant |
Cấu hình chân ISC033N03LF2SATMA1
| Chân 1 | Gate — Gate drive input (10 V VGS recommended for full RDS(on)) |
| Chân 2 | Drain — Drain connection (also bonded to exposed pad) |
| Chân 3 | Drain — Drain connection (also bonded to exposed pad) |
| Chân 4 | Drain — Drain connection (also bonded to exposed pad) |
| Chân 5 | Drain — Drain connection (also bonded to exposed pad) |
| Chân 6 | Drain — Drain connection (also bonded to exposed pad) |
| Chân 7 | Drain — Drain connection (also bonded to exposed pad) |
| Chân 8 | Source — Source connection (also bonded to exposed bottom pad - source-down package) |
ISC033N03LF2SATMA1 Khu vực hoạt động an toàn (DC, TJ=25 C)
Ứng dụng tiêu biểu
ISC033N03LF2SATMA1 phù hợp cho 7 Áp dụngs: Synchronous Rectification in 12V DC-DC Converters, OR-ing FET for Redundant 24V/48V Telecom Rails, Hot-Swap / Inrush Controller Switch, Battery Protection in 4S-7S Li-Ion Packs, Motor Drive Low-Side / Half-Bridge Switch, High-Current Point-of-Load (POL) in Servers, USB-PD / High-Current Load Switch.
Synchronous Rectification in 12V DC-DC Converters
The ISC033N03LF2SATMA1 fits 12 V synchronous rectification because its 30 V VDS gives comfortable margin against 12 V rail plus transients, while the 3.3 mOhm RDS(on) at 10 V VGS minimises conduction loss on the low-side switch in buck or forward converters. At 50 A load the part dissipates only I-squared-R = 50 x 50 x 0.0033 = 8.25 W, which the source-down PG-TDSON-8-62 pad can dump directly into the PCB copper. Designers place the part on the secondary side of an isolated brick, drive the gate with a 10 V gate-driver IC, and add a small RC snubber across the drain-source to control ringing. The result is high-efficiency (>96% target) isolated DC-DC stages for server and telecom power.
Được đề xuất
OR-ing FET for Redundant 24V/48V Telecom Rails
ISC033N03LF2SATMA1 works as an OR-ing FET on redundant -48 V telecom return or 24 V industrial rails because its 30 V VDS easily handles the bus voltage and its low 3.3 mOhm RDS(on) minimises voltage drop and heat between parallel power supplies. The source-down package lets the OR-ing FET sit on a continuous copper pour that doubles as a heat-spreader in the equipment shelf. Place a hot-swap controller IC nearby to manage inrush current and gate ramp; the body diode's reverse recovery characteristics also make the part suitable for battery-backup OR-ing. Compared to a Schottky diode, the FET saves several watts per rail at 30 A load.
Được đề xuất
Hot-Swap / Inrush Controller Switch
In a hot-swap or inrush-limiting role, the ISC033N03LF2SATMA1 acts as the main pass element between a live backplane (12 V to 24 V) and a plug-in board. Its 108 A TC-rated continuous current handles the full load after insertion, while its low RDS(on) keeps the drop under 50 mV at 15 A, leaving more voltage headroom for the load. A dedicated hot-swap controller ramps the gate from 0 V to 10 V over a few milliseconds to limit inrush into the bulk capacitance. The PG-TDSON-8-62 source-down layout gives excellent thermal coupling so that sustained current does not require a heatsink, just ample PCB copper.
Được đề xuất
Battery Protection in 4S-7S Li-Ion Packs
ISC033N03LF2SATMA1 fits 4S to 7S lithium-ion battery protection boards where the maximum cell-pack voltage is 7 x 4.2 V = 29.4 V - exactly within the 30 V VDS rating. Its low 3.3 mOhm RDS(on) minimises voltage drop on the discharge path at high current, extending pack capacity at high discharge rates (e.g. e-bike, power-tool, drone packs). Place two ISC033N03LF2SATMA1 in back-to-back configuration to block charge and discharge independently, or use one with a separate charge FET. The 71 W TC power dissipation gives plenty of margin for transient short-circuit events that the protection IC must clear in microseconds.
Được đề xuất
Motor Drive Low-Side / Half-Bridge Switch
ISC033N03LF2SATMA1 is well-suited as the low-side switch in small BLDC or brushed-DC motor drives up to 30 V pack voltage. The 108 A peak rating handles motor inrush and stall currents; the 3.3 mOhm RDS(on) keeps conduction loss low for sustained torque output. Pair the part with a complementary high-side P-channel or N-channel MOSFET, drive both gates from a half-bridge driver such as the IR2304SPBF or 2EDR8258XXUMA1, and place a small bootstrap capacitor for the high-side. The PG-TDSON-8-62 package's source-down pad also provides good thermal mass for repetitive pulse currents during PWM commutation.
Được đề xuất
High-Current Point-of-Load (POL) in Servers
In server point-of-load converters stepping 12 V down to 1 V or 0.8 V at 60-80 A, the ISC033N03LF2SATMA1 makes an excellent synchronous buck low-side FET. Its 30 V VDS easily handles the 12 V input plus ringing, and the 3.3 mOhm RDS(on) at 10 V VGS keeps conduction loss to about 5 W at 40 A (40 x 40 x 0.0033). The source-down PG-TDSON-8-62 pad couples directly into the PCB ground plane, which doubles as a heat-spreader under forced airflow. Place the part adjacent to the high-side FET with a tight gate-drive loop to minimise switching loss, and use a multi-phase digital controller for current sharing.
Được đề xuất
USB-PD / High-Current Load Switch
ISC033N03LF2SATMA1 fits as a load switch or e-fuse element in 20 V USB-PD power paths and other high-current load-management circuits. The 30 V VDS safely contains the USB-PD 20 V maximum plus inductive ringing from the cable, while the 3.3 mOhm RDS(on) keeps voltage drop under 100 mV at 30 A continuous. Drive the gate from a smart high-side switch controller such as the BTS710336ESAXUMA1 for over-current protection; the part's low Rds(on) also minimises self-heating during sustained loads. The PG-TDSON-8-62 source-down layout fits cleanly beneath the Type-C connector footprint for compact designs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC033N03LF2SATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC028N03LF2SATMA1 | ISC011N04NM7VATMA1 | ISC015N06NM5ATMA1 | ISC045N03L5SATMA1 | ISC033N03LF2SATMA1-VB |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-62 (Source-Down, 5x6 mm) | PG-TDSON-8-62 (Source-Down) - same | PG-TDSON-8-62 (Source-Down) - same | PG-TDSON-8-62 (Source-Down) - same | PG-TDSON-8-62 (Source-Down) - same | DFN8 (5x6) - same footprint, cross-brand |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| VDS max | 30 V | 30 V | 40 V | 60 V | 30 V | 30 V |
| RDS(on) max at 10V VGS | 3.3 mOhm | ~2.8 mOhm | ~1.1 mOhm | ~1.5 mOhm | ~4.5 mOhm | ~3.0 mOhm |
| Continuous Drain Current (ID) at TC | 108 A | ~120 A | ~200 A | ~180 A | ~80 A | 120 A |
| Technology Family | OptiMOS LF2 (<=40V) | OptiMOS LF2 (<=40V) | OptiMOS 5 40V | OptiMOS 5 60V | OptiMOS 5 30V | Trench (cross-brand VBsemi) |
| Source-Down Pinout | Yes (PG-TDSON-8-62) | Yes (same) | Yes (same) | Yes (same) | Yes (same) | Yes (per VBsemi datasheet) |
Bảo phân biệt quan trọng
- Source-down package simplifies thermal design and gate-drive return (vsISC151N08NM6ATMA1 (higher-VDS 80 V variant))
- Lowest 30 V RDS(on) in Infineon LF2 family at sub-40 V (vsISC045N03L5SATMA1 (other 30 V LF2 sibling))
- Plug-compatible with multiple Infineon OptiMOS siblings for design reuse (vsBSC076N04NDATMA1 (40 V OptiMOS))
Ghi chú thiết kế
Estimated: at 50 A continuous with 3.3 mOhm RDS(on), conduction loss is approximately I-squared-R = 50 x 50 x 0.0033 = 8.25 W. The PG-TDSON-8-62 source-down package routes heat out the source pad into the PCB copper, so on a JEDEC EIA/JESD51 1-square-inch 2 oz copper pour the part typically sustains 20-30 A in free air without a heatsink. For sustained 50-100 A loads, expand the PCB copper area to at least 4 square inches or attach a small heatsink on the opposite side of the board. The 71 W TC rating only applies if the case temperature is actively held at 25 C.
Source-down packages simplify the gate-drive return path: keep the gate-driver IC within 5 mm of the gate pad and place the gate pull-down resistor (10-100 kOhm) right at the IC pin to prevent Miller-induced turn-on. The drain pad (pins 2-7 plus exposed pad) must be flooded with copper and have at least 4 thermal vias (0.3 mm drill, 1 mm pitch) to inner copper layers. Estimate: every additional 1 oz copper square inch lowers junction-to-ambient thermal resistance by roughly 5 C/W.
Do not gate ISC033N03LF2SATMA1 directly from a microcontroller 3.3 V GPIO - the gate threshold is 2.35 V typ but full RDS(on) requires 10 V VGS to hit 3.3 mOhm; at 4.5 V VGS the RDS(on) is several times higher and the part will overheat at high current. Always use a dedicated gate driver (e.g., 1ED3127MU12FXUMA1 or IR2010STRPBF) capable of sourcing 1-2 A peak to switch the Ciss quickly. In hard-switched topologies add an RC snubber (e.g., 10 ohm + 1 nF) across drain-source to limit VDS overshoot below 30 V.
Thông tin tuân thủ
RoHS and REACH compliance per Infineon product page (confirmed by DigiKey listing). Not AEC-Q100 qualified - this is a standard industrial/commercial part; for automotive grade look at the ISC033N03LF2SATMA1 automotive part number suffix. Lead-free reflow profile per JEDEC J-STD-020.
