K4B4G1646F-BYMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646F-BYMA ✓ Hoạt độngK4B4G1646F-BYMA Tóm tắt
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20%. It is part of the DDR3 family, which uses an 8n-prefetch architecture to achieve high bandwidth. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 16-bit I/O interface, programmable CAS latency, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and a temperature-compensated self-refresh (TCSR) mode. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing and has a 1KB page size. The FBGA-96 package provides a compact footprint suitable for high-density PCB designs.
Technically, the K4B4G1646F-BYMA uses a 30nm-class process technology, enabling high density with low power. It incorporates a pseudo-open-drain interface for data strobe (DQS) and supports write leveling, read/write training, and multi-purpose register (MPR) for system calibration. The device is designed to meet JEDEC DDR3L standards, ensuring compatibility with standard memory controllers.
Typical applications include laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and wide temperature range make it ideal for battery-powered and thermally constrained environments. The 256M x 16 organization is suitable for systems requiring high-density memory with a 16-bit data bus.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Bộ thay thế dễ dàng lắp đặt cho K4B4G1646F-BYMA — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4B4G1646F-BYMA (cùng hình factor và footprint) — khác nhau ở Package, Memory Type, CAS Latency, Clock Frequency, Data Rate.
K4B4G1646E-BYMA
✅ Drop-In✗ Hết hàng
$14.3182 / Đơn vị
Xem tài liệu →K4B4G1646D-BYMA
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
K4B4G1646B-BYMA
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MT41K512M16HA-125
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
H5TQ4G63CFR-PBC
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT41K256M16HA-125
✅ Drop-In✗ Hết hàng
$6.3636 / Đơn vị
Xem tài liệu →H5TQ4G63AFR
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
K4B4G1646F-BYMA Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 4 Gb |
| Tổ chức | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V) |
| Tốc độ dữ liệu | 1866 Mbps (PC3-14900) |
| Hộp | 96-FBGA (Lead-Free & Halogen-Free) |
| Nhiệt độ hoạt động | -40°C to +95°C |
| Latency CAS | CL=13 (at 1.35V) |
| Burst Length | 8, 4 (with burst chop) |
| Giao diện | 16-bit I/O |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
| Đông trùng haogen | Yes |
Cấu hình chân K4B4G1646F-BYMA
| Chân A1 | VDD — Power supply |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | VSS — Ground |
| Chân B1 | DQ1 — Data input/output 1 |
| Chân B2 | VDDQ — Power supply for output |
| Chân B3 | DQ2 — Data input/output 2 |
| Chân C1 | DQ3 — Data input/output 3 |
| Chân C2 | VSSQ — Ground for output |
| Chân C3 | DQ4 — Data input/output 4 |
| Chân D1 | DQ5 — Data input/output 5 |
| Chân D2 | VDD — Power supply |
| Chân D3 | DQ6 — Data input/output 6 |
| Chân E1 | DQ7 — Data input/output 7 |
| Chân E2 | VSS — Ground |
| Chân E3 | DQS0 — Data strobe 0 |
| Chân F1 | DQS0# — Data strobe 0 complement |
| Chân F2 | VDDQ — Power supply for output |
| Chân F3 | DM0 — Data mask 0 |
| Chân G1 | A0 — Address input 0 |
| Chân G2 | A1 — Address input 1 |
| Chân G3 | A2 — Address input 2 |
| Chân H1 | A3 — Address input 3 |
| Chân H2 | A4 — Address input 4 |
| Chân H3 | A5 — Address input 5 |
| Chân J1 | A6 — Address input 6 |
| Chân J2 | A7 — Address input 7 |
| Chân J3 | A8 — Address input 8 |
| Chân K1 | A9 — Address input 9 |
| Chân K2 | A10/AP — Address input 10 / auto precharge |
| Chân K3 | A11 — Address input 11 |
| Chân L1 | A12 — Address input 12 |
| Chân L2 | A13 — Address input 13 |
| Chân L3 | A14 — Address input 14 |
| Chân M1 | BA0 — Bank address 0 |
| Chân M2 | BA1 — Bank address 1 |
| Chân M3 | BA2 — Bank address 2 |
| Chân N1 | CK — Clock |
| Chân N2 | CK# — Clock complement |
| Chân N3 | CKE — Clock enable |
| Chân P1 | CS# — Chip select |
| Chân P2 | RAS# — Row address strobe |
| Chân P3 | CAS# — Column address strobe |
| Chân R1 | WE# — Write enable |
| Chân R2 | ODT — On-die termination |
| Chân R3 | RESET# — Reset |
| Chân T1 | ZQ — Calibration reference |
| Chân T2 | VDD — Power supply |
| Chân T3 | VSS — Ground |
Ứng dụng tiêu biểu
K4B4G1646F-BYMA phù hợp cho 6 Áp dụngs: Laptop Memory, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers and Data Centers.
Laptop Memory
The K4B4G1646F-BYMA is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization allow for compact module designs. The wide temperature range (-40°C to +95°C) ensures reliable operation in portable devices exposed to varying environmental conditions. With data rates up to 1866 Mbps, it meets the performance demands of modern computing tasks, including multitasking and multimedia applications.
Được đề xuất
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646F-BYMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1866 Mbps data rate supports high-throughput data processing, while the low 1.35V supply reduces heat generation in densely packed chassis. The FBGA-96 package allows for high-density PCB layouts, and the auto precharge and ZQ calibration features simplify system design. The industrial temperature range makes it suitable for outdoor and harsh environment networking gear.
Được đề xuất
Industrial PCs
The K4B4G1646F-BYMA is well-suited for industrial PCs that require reliable operation in extreme temperatures. Its -40°C to +95°C operating range ensures functionality in factory floors and outdoor installations. The 1.35V operation reduces power consumption, which is critical for fanless designs. With 4Gb density, it provides ample memory for control algorithms and data logging. The device's compliance with JEDEC DDR3L standards ensures compatibility with standard industrial motherboards.
Được đề xuất
Automotive Infotainment
For automotive infotainment systems, the K4B4G1646F-BYMA offers the performance and reliability needed for navigation, media playback, and connectivity. Its wide temperature range (-40°C to +95°C) meets AEC-Q100 Grade 3 requirements, ensuring operation in vehicle cabins. The low 1.35V supply reduces power draw from the vehicle's electrical system. The 1866 Mbps data rate supports smooth graphics and fast app loading. The FBGA-96 package is compact, fitting into space-constrained head units.
Được đề xuất
Embedded Systems
The K4B4G1646F-BYMA is a versatile memory solution for embedded systems, including single-board computers and IoT gateways. Its low power consumption and wide temperature range make it suitable for battery-powered and outdoor deployments. The 256Mx16 organization provides a good balance of density and bus width for many applications. The device's support for DLL-enabled mode and on-die termination simplifies PCB design, reducing external components. With 1866 Mbps, it can handle data-intensive tasks like image processing and real-time analytics.
Được đề xuất
Servers and Data Centers
In servers and data centers, the K4B4G1646F-BYMA can be used in memory modules for high-density computing. Its 4Gb density allows for large-capacity DIMMs, and the 1.35V operation reduces power consumption, lowering cooling costs. The 1866 Mbps data rate supports high-bandwidth applications such as virtualization and big data analytics. The device's reliability and long lifecycle make it suitable for enterprise environments where uptime is critical.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4B4G1646F-BYMA — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4B4G1646E-BYMA | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Micron | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V | 1.35V / 1.5V |
| Data Rate | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lead-Free | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Higher data rate (1866 Mbps) compared to K4B4G1646E-BYMA (vsK4B4G1646E-BYMA)
- Wider operating temperature range (-40°C to +95°C) vs Micron MT41K512M16HA-125 (vsMT41K512M16HA-125)
- Dual voltage support (1.35V and 1.5V) vs SK Hynix H5TQ4G63CFR-PBC (vsH5TQ4G63CFR-PBC)
Ghi chú thiết kế
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and address/control lines. Keep trace lengths matched within +/- 20 mils for data groups and within +/- 100 mils for address/control. Use a solid ground plane beneath the memory device and minimize vias to reduce signal integrity issues.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm +/- 1% resistor to ground for calibration. Ensure the VREF voltage is generated accurately, typically at 0.5 * VDDQ.
The K4B4G1646F-BYMA operates up to +95°C, but for high-density modules, consider airflow and heat spreading. The FBGA package has a thermal resistance (theta_JA) of approximately 30°C/W. For industrial applications, ensure adequate cooling to keep the junction temperature within limits. Use thermal vias under the package if possible.
Thông tin tuân thủ
Lead-free and halogen-free per datasheet. RoHS compliant per Samsung product page. AEC-Q100 not applicable as this is a memory IC, not an automotive-grade part.
