1ED44173N01BXTSA1 vs 1EDN7126GXTMA1 比較

詳細並排比較 1ED44173N01BXTSA1 由 Infineon 與 1EDN7126GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED44173N01BXTSA1 1ED44173N01BXTSA1 - 25V 2.6A Low-Side Gate Driver | Infineon

1ED44173N01BXTSA1 - 25V 2.6A Low-Side Gate Driver | Infineon

1ED44173N01BXTSA1 ✓ 啟用中

規格比較

參數 1ED44173N01BXTSA1 1EDN7126GXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Low-Side MOSFET Gate Driver —
Number of Channels 1 —
Configuration Non-Inverting Non-Inverting
Supply Voltage (VCC) 4.5 V to 25 V —
Output Current (Source) 2.6 A typical —
Output Current (Sink) 2.6 A typical —
上升時間 [DATA_NEEDED: rise time] —
下降時間 [DATA_NEEDED: fall time] —
Propagation Delay < 100 ns typical —
靜態電流 0.4 mA typical —
Over-Current Protection Yes (integrated, 4.5 V to 25 V threshold) —
Fault Reporting Yes (open-drain FAULT pin) —
致能腳位 Yes —
Under-Voltage Lockout (UVLO) Yes —
工作溫度 -40 C to +125 C —
封裝 PG-SOT23-6-3 (6-pin) PG-VSON-10-4
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
功能 — Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Peak Source Current — 1.5 A
Peak Sink Current — 1.5 A
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
工作溫度範圍 — -40C to +125C
MSL 等級 — [DATA_NEEDED: MSL rating]
Reach — Compliant
Lead-Free — Yes
Input Logic Compatibility — 3.3 V / 5 V TTL/CMOS (TDI)

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