EP3SE260H780C4L vs EP3SE260H780C3N 比較
詳細並排比較 EP3SE260H780C4L 由 Intel 與 EP3SE260H780C3N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE260H780C4L | EP3SE260H780C3N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | NRND | 啟用中 |
| Family | Stratix III E | — |
| Logic Elements | 255,000 | — |
| LABs/CLBs | 10,200 | — |
| Total RAM Bits | 16,672,768 (16.7 Mbit) | — |
| User I/O Count | 488 | — |
| 封裝 | 780-ball FCBGA (HBGA 33x33 mm) | 780-BBGA, FCBGA (H780) |
| Speed Grade | C4 (middle/slow tier) | — |
| Core Voltage | 0.9 V (nominal) | — |
| 工作接面溫度 | 0C to +85C (commercial) | — |
| 安裝類型 | Surface Mount (flip-chip BGA) | Surface Mount |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| RoHS 狀態 | Compliant (lead-free per datasheet) | Compliant (lead-free 'N' suffix) |
| Transceivers | Up to 24 multi-gigabit transceivers | [DATA_NEEDED: number of embedded transceivers and max data rate] |
| Memory Interface | DDR3, DDR2, QDRII+, RLDRAM II controllers | — |
| Configuration Mode | PS, FPP, JTAG with EPCS/EPCQ | — |
| Series | — | Stratix® III E |
| Logic Elements (LE) | — | 255,000 |
| Embedded Memory (bits) | — | 16,672,768 |
| Number of LABs/CLBs | — | 10,200 |
| User I/Os | — | 488 |
| Number of Pins / Balls | — | 780 |
| 工作溫度 | — | 0 °C to +85 °C (C grade, commercial) |
| Process Technology | — | 40 nm CMOS |
| Maximum Core Frequency | — | [DATA_NEEDED: maximum core frequency MHz] |
| Supply Voltage (VCCINT) | — | [DATA_NEEDED: VCCINT nominal V] |
| DSP Blocks | — | [DATA_NEEDED: number of DSP blocks and precision] |
| 濕度敏感等級 (MSL) | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |
| Configuration Method | — | SRAM-based, configured via JTAG / passive / active serial / fast passive parallel |
| Design Toolchain | — | Altera Quartus II (legacy); Intel Quartus Prime |