H5AN4G8NBJR-PBC vs H5AN4G8NBJR-UHCR 比較

詳細並排比較 H5AN4G8NBJR-PBC 由 SK hynix 與 H5AN4G8NBJR-UHCR 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN4G8NBJR-PBC H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix

H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix

H5AN4G8NBJR-PBC ✓ 啟用中
SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ 啟用中

規格比較

參數 H5AN4G8NBJR-PBC H5AN4G8NBJR-UHCR
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Memory Density 4 Gbit —
組織 512M x 8 512M x 8
記憶體類型 DDR4 SDRAM DDR4 SDRAM
介面類型 Parallel, JEDEC DDR4 —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
Speed Grade PBC UH (DDR4-2400 class, PC2400)
Clock Frequency [DATA_NEEDED: Clock Frequency] —
CAS Latency (CL) [DATA_NEEDED: CAS Latency] —
封裝 78-ball FBGA 78-ball FBGA (11 mm x 7.5 mm)
安裝類型 Surface Mount Surface Mount (BGA solder-down)
Normal Operating Case Temperature 0C to 85C —
Extended Temperature Range up to 95C case (with increased refresh) Up to +95C case temperature (per datasheet conditions)
Lead Free Yes Yes
無鹵素 Yes Yes
Refresh 8n prefetch, standard/auto refresh per DDR4 JEDEC [DATA_NEEDED: refresh rate 1x/2x specification]
Density — 4 Gbit
供應電壓 — 1.2 V (VDD)
介面 — DDR4 SSTL12
Internal Prefetch — 8n
Operating Case Temperature — -40C to +85C (industrial range)
RoHS 狀態 — Compliant
Packaging Suffix — -R = Tape and Reel
CAS 延遲 — [DATA_NEEDED: CL value for UH grade]

資料表與資源

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