H5AN8G6NAFR-UHC vs H5AN8G6NDJR 比較
詳細並排比較 H5AN8G6NAFR-UHC 由 SK hynix 與 H5AN8G6NDJR 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G6NAFR-UHC | H5AN8G6NDJR |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| 組織 | 512M x 16 | 512M x 16 |
| 供應電壓 | 1.2 V | 1.2 V |
| 資料速率 | 2400 MT/s | 3200 Mbps (DDR4-3200) |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| 封裝 | 96-ball FBGA (TFBGA) | 96-ball FBGA (13mm x 7.5mm) |
| 安裝類型 | Surface Mount | — |
| 工作溫度 | 0C to +85C | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Density | — | 8 Gb |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS 延遲 | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| 功能特色 | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |