H5AN8G6NAFR-UHC vs H5AN8G6NDJR Perbandingan
Perbandingan bersamaan detil H5AN8G6NAFR-UHC dari SK hynix dan H5AN8G6NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G6NAFR-UHC | H5AN8G6NDJR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Laju Data | 2400 MT/s | 3200 Mbps (DDR4-3200) |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Paket | 96-ball FBGA (TFBGA) | 96-ball FBGA (13mm x 7.5mm) |
| Tipe Mounting | Surface Mount | — |
| Suhu Kerja | 0C to +85C | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Density | — | 8 Gb |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Fitur | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |