H5AN8G6NAFR-UHC vs K4A8G085WC 比較
詳細並排比較 H5AN8G6NAFR-UHC 由 SK hynix 與 K4A8G085WC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ 啟用中規格比較
| 參數 | H5AN8G6NAFR-UHC | K4A8G085WC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| 組織 | 512M x 16 | 1G x 8 |
| 供應電壓 | 1.2 V | 1.2 V |
| 資料速率 | 2400 MT/s | — |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| 封裝 | 96-ball FBGA (TFBGA) | 78-ball FBGA (78FBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +85C | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | — |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gbit |
| Speed | — | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage Range | — | 1.14 V to 1.26 V |
| Clock Frequency | — | 1333 MHz (1333.333 GHz nominal, per web data) |
| Operating Temperature (K4A8G085WC-BITD) | — | -40 C to +95 C |
| Operating Temperature (K4A8G085WC-BCTD) | — | 0 C to +95 C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Data Mask (DM) | — | Yes |