IDL04G65C5XUMA2 vs IGLT65R035D2ATMA1 比較
詳細並排比較 IDL04G65C5XUMA2 由 Infineon 與 IGLT65R035D2ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IDL04G65C5XUMA2 | IGLT65R035D2ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Diodes | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode Generation 5 | CoolGaN™ G5 TOLT |
| Diode Type | Silicon Carbide (SiC) Schottky | — |
| Repetitive Peak Reverse Voltage (V_RRM) | 650 V | — |
| Continuous Forward Current (I_F(AV)) | 4 A | — |
| Total Capacitive Charge (Q_C) | 7 nC (typical) | — |
| Forward Voltage (V_F) | 1.7 V at 4 A (typical, per datasheet) | — |
| Reverse Leakage Current (I_R) | 70 µA at 650 V | — |
| Junction Capacitance (C_J) | 130 pF at 1 V, 1 MHz | — |
| Reverse Recovery Time (t_rr) | 0 ns (Schottky, no minority-carrier storage) | — |
| 工作接面溫度 | -55°C to +175°C | — |
| 封裝 | PG-VSON-4 (DPAK real2pin) Surface Mount | PG-HDSOP-16-8 (top-side cooled) |
| 安裝類型 | Surface Mount, Tape & Reel | Surface Mount |
| 腳位數 | 4 (with exposed thermal pad) | — |
| RoHS / REACH | RoHS Compliant (per Infineon product page) | — |
| 電晶體類型 | — | N-Channel enhancement-mode GaN HEMT |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id) at Tc | — | 47 A |
| Maximum Power Dissipation (Pd) at Tc | — | 154 W |
| On-Resistance (Rds(on)) | — | [DATA_NEEDED: typical Rds(on) in mohm] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Input Capacitance (Ciss) at Vds=400V | — | 540 pF |
| 工作溫度範圍 | — | [DATA_NEEDED: Tj min/max] |
| Cooling Configuration | — | Top-side cooled (TOLT) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Production Wafer Size | — | 200 mm (8 inch) |