K4A4G045WD-BCRC vs K4A4G085WD-BCRC 比較
詳細並排比較 K4A4G045WD-BCRC 由 Samsung Electronics 與 K4A4G085WD-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G045WD-BCRC | K4A4G085WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gb | — |
| 組織 | 1G x4 | 512M x 8 |
| Die Generation | D-die | — |
| Supply Voltage VDD | 1.2 V | — |
| Speed Grade / Data Rate | BCRC (2400 Mbps per Samsung product selection guide) | — |
| 封裝 | TFBGA-78 (FBGA-78) | FBGA-78 (TFBGA) |
| Number of Terminals | 78 | 78 |
| Self Refresh | Yes | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Clock Frequency | [DATA_NEEDED: CK frequency for BCRC bin] | — |
| CAS 延遲 | [DATA_NEEDED: CL for BCRC bin] | [DATA_NEEDED: CAS Latency] |
| Bank Architecture | DDR4 8 internal banks with bank groups | — |
| Refresh | Self refresh supported (per Partstack listing) | [DATA_NEEDED: Refresh specification] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Lead Free Status | [DATA_NEEDED: lead-free status] | — |
| Packaging Option | [DATA_NEEDED: tape and reel quantity] | — |
| Memory Density | — | 4 Gbit |
| 資料速率 | — | 2400 Mb/s (PC2400) |
| 供應電壓 | — | 1.2 V |
| 介面 | — | Parallel |
| Access Mode | — | Multi-bank page burst |
| 工作溫度範圍 | — | [DATA_NEEDED: Operating Temperature Range] |
| MSL 等級 | — | [DATA_NEEDED: MSL Level] |