K4A4G085WG-BCWE vs K4A4G085WF-BITD 比較
詳細並排比較 K4A4G085WG-BCWE 由 Samsung Electronics 與 K4A4G085WF-BITD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G085WG-BCWE | K4A4G085WF-BITD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| 記憶體容量 | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| 資料速率 | 3200 Mbps/pin | — |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| 封裝 | FBGA-78 (BCW) | 78-ball FBGA (78FBGA) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 介面 | Parallel (DDR4) | Parallel, DDR4 SSTL12 |
| Burst Length | BL8 | BL8 |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Refresh | [DATA_NEEDED: refresh rate specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| RoHS 狀態 | Compliant | — |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| 組織 | — | 512M x 8 |
| Speed | — | 2666 Mbps (MT/s) |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| CAS 延遲 | — | CL19 (typical at 2666 Mbps) |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |