K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung
Référence : K4A8G085WB-BICH ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.48 | $6,48 |
| 10 | $6.1 | $61,00 |
| 100 | $5.72 | $572,00 |
| 500 | $5.34 | $2 670,00 |
| 1 000 | $4.96 | $4 960,00 |
K4A8G085WB-BICH Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and features higher module densities and improved signal integrity through on-die termination (ODT) and data bus inversion (DBI). DDR4 is the industry standard for main memory in servers, desktops, and embedded systems.
Key features include a 1.2V power supply, 8Gb density, x8 organization, and a 78-ball FBGA package. The device supports various burst lengths (BL8, BL16) and features programmable CAS latency, write latency, and refresh rates. It also includes on-die ECC, error correction coding, and temperature-compensated refresh for enhanced reliability.
Technically, the K4A8G085WB-BICH utilizes Samsung's advanced B-die process technology, offering low power consumption and high-speed operation. It supports a wide operating temperature range of 0°C to 85°C, making it suitable for commercial and industrial environments. The device is RoHS compliant and lead-free.
Typical applications include servers, data centers, networking equipment, and high-end consumer electronics. Its high density and speed make it ideal for memory-intensive tasks such as virtualization, cloud computing, and real-time analytics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and careful attention to timing parameters for reliable operation.
Alternatives de remplacement direct pour K4A8G085WB-BICH — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G085WB-BICH (même facteur de forme et même empreinte) — différant par Data Rate, Operating Temperature, Burst Length, Package, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G085WB-BCPB
✅ Remplacement direct✓ En stock
$13.7813 / unité
Voir la fiche technique →K4A8G085WB-BCRC
✅ Remplacement direct✓ En stock
$6.8 / unité
Voir la fiche technique →K4A8G085WB-BIRC
✅ Remplacement direct✓ En stock
$6.5625 / unité
Voir la fiche technique →K4A8G085WC-BIWE
✅ Remplacement direct✓ En stock
$6.29 / unité
Voir la fiche technique →K4A8G085WB-BCTD
✅ Remplacement direct✓ En stock
$7.5 / unité
Voir la fiche technique →K4A8G085WB-BITD
✅ Remplacement direct✓ En stock
$3.8 / unité
Voir la fiche technique →K4A8G085WB-BICH Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8Gb |
| Organisation de la mémoire | 1G x 8 |
| Tension d'alimentation | 1.2V |
| Débit de données | 2400 Mbps (DDR4-2400) |
| Boîtier | 78-ball FBGA |
| Température de fonctionnement | 0°C to 85°C |
| Max Supply Current | 170mA |
| Burst Length | BL8, BL16 |
| Latence CAS | Programmable |
| On-Die ECC | Yes |
| Data Bus Inversion | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
| Die Revision | B-die |
Configuration des broches de K4A8G085WB-BICH
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | DQ2 — Data input/output 2 |
| Broche B2 | DQ3 — Data input/output 3 |
| Broche B3 | VDD — Power supply |
| Broche B4 | DQ4 — Data input/output 4 |
| Broche C1 | DQ5 — Data input/output 5 |
| Broche C2 | VSS — Ground |
| Broche C3 | DQ6 — Data input/output 6 |
| Broche C4 | DQ7 — Data input/output 7 |
Applications typiques
K4A8G085WB-BICH convient pour 6 applications: Server Memory, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Data Center Storage.
Server Memory
The K4A8G085WB-BICH provides high-density, high-speed memory for servers, enabling fast data processing and virtualization. Its 8Gb density and DDR4-2400 speed support demanding workloads, while 1.2V operation reduces power consumption in data centers. The FBGA-78 package allows compact module designs, and on-die ECC enhances reliability for enterprise applications.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the K4A8G085WB-BICH offers high bandwidth and low latency for packet processing and routing tables. Its 1.2V operation minimizes heat generation, crucial for dense line cards. The x8 organization simplifies board layout, and the wide temperature range supports outdoor and industrial networking gear.
Recommandé
Industrial Computing
For industrial PCs and embedded systems, the K4A8G085WB-BICH provides reliable memory operation from 0°C to 85°C. Its high density supports complex control algorithms and data logging. The FBGA package is robust for harsh environments, and the low power consumption is ideal for fanless designs. On-die ECC helps prevent data corruption in critical applications.
Recommandé
Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G085WB-BICH delivers fast memory performance for smooth graphics and multitasking. Its 8Gb density allows for rich multimedia experiences, while 1.2V operation extends battery life in portable devices. The compact FBGA package enables slim product designs.
Recommandé
Automotive Infotainment
The K4A8G085WB-BICH supports automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its wide temperature range and reliability make it suitable for vehicle environments. The 1.2V operation reduces power draw, and the FBGA package withstands vibration. On-die ECC enhances data integrity for safety-critical functions.
Recommandé
Data Center Storage
In data center storage systems, the K4A8G085WB-BICH provides high-speed cache memory for SSDs and storage controllers. Its 8Gb density and DDR4-2400 speed accelerate data access, while low power consumption reduces operational costs. The FBGA package is ideal for high-density storage arrays, and on-die ECC ensures data integrity in large-scale deployments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G085WB-BICH — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G085WB-BCPB | K4A8G085WB-BCRC | K4A8G085WB-BIRC |
|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
Principaux différenciateurs
- B-die process technology (vs K4A8G085WC-BIWE (C-die))
- Wide operating temperature range (vs K4A8G085WB-BCPB)
- On-die ECC support (vs K4A8G085WB-BCRC)
Notes de conception
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route DQ signals with matched trace lengths to ensure signal integrity. Follow the layout guidelines in the Samsung datasheet for optimal performance.
The K4A8G085WB-BICH operates up to 85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The max supply current is 170mA, so power dissipation is moderate, but thermal management is still important for reliability.
Use on-die termination (ODT) settings to match the memory controller's impedance and reduce reflections. Set the appropriate ODT values in the memory controller registers. Also, enable data bus inversion (DBI) to reduce simultaneous switching noise.
Informations de conformité
RoHS compliant per Samsung datasheet. Lead-free. AEC-Q100 not applicable for memory components.
