SPW47N60C3 vs IPW60R041C6FKSA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ SPW47N60C3 بواسطة Infineon و IPW60R041C6FKSA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | SPW47N60C3 | IPW60R041C6FKSA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | NRND |
| Part Number | SPW47N60C3 | — |
| Manufacturer | Infineon Technologies AG | — |
| Technology | CoolMOS C3 (superjunction) | CoolMOS™ C6 (Superjunction N-channel) |
| نوع الترانزستور | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Continuous Drain Current (ID) at Tc | 47 A | — |
| Power Dissipation (PD) at Tc | 415 W | — |
| RDS(on) (typical) | 70 mOhm [DATA_NEEDED: VGS test condition] | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: nanocoulombs] | — |
| Output Capacitance Eoss @ 400V | Very low (per C3 series datasheet) | — |
| العلبة | TO-247-3-1 (PG-TO247-3-1) through-hole | PG-TO247-3-1 (TO-247-3) |
| نوع التركيب | Through Hole | Through Hole |
| نطاق درجة حرارة التشغيل | -55C to +150C (junction, typical for CoolMOS C3) | -55°C to +150°C |
| Configuration | Single N-channel, 3 pins (G, D, S) | — |
| حالة RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| مستوى MSL | N/A (through-hole) | Not Applicable (Through-hole) |
| Series | CoolMOS C3 (600V generation) | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |