SPW47N60C3 vs IPW60R041C6FKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng SPW47N60C3 sa pamamagitan ng Infineon at IPW60R041C6FKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro SPW47N60C3 IPW60R041C6FKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo NRND
Part Number SPW47N60C3 —
Manufacturer Infineon Technologies AG —
Technology CoolMOS C3 (superjunction) CoolMOS™ C6 (Superjunction N-channel)
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 650 V —
Continuous Drain Current (ID) at Tc 47 A —
Power Dissipation (PD) at Tc 415 W —
RDS(on) (typical) 70 mOhm [DATA_NEEDED: VGS test condition] —
Gate Charge (Qg, typical) [DATA_NEEDED: nanocoulombs] —
Output Capacitance Eoss @ 400V Very low (per C3 series datasheet) —
Packhaging TO-247-3-1 (PG-TO247-3-1) through-hole PG-TO247-3-1 (TO-247-3)
Uri ng Pagpapasok Through Hole Through Hole
Hanay ng Temperature na Operasyon -55C to +150C (junction, typical for CoolMOS C3) -55°C to +150°C
Configuration Single N-channel, 3 pins (G, D, S) —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Level ng MSL N/A (through-hole) Not Applicable (Through-hole)
Series CoolMOS C3 (600V generation) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]

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