SPW47N60C3 vs IPW60R041C6FKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci SPW47N60C3 disebabkan oleh Infineon dan IPW60R041C6FKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr SPW47N60C3 IPW60R041C6FKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Part Number SPW47N60C3 —
Manufacturer Infineon Technologies AG —
Technology CoolMOS C3 (superjunction) CoolMOS™ C6 (Superjunction N-channel)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 650 V —
Continuous Drain Current (ID) at Tc 47 A —
Power Dissipation (PD) at Tc 415 W —
RDS(on) (typical) 70 mOhm [DATA_NEEDED: VGS test condition] —
Gate Charge (Qg, typical) [DATA_NEEDED: nanocoulombs] —
Output Capacitance Eoss @ 400V Very low (per C3 series datasheet) —
Kemasan TO-247-3-1 (PG-TO247-3-1) through-hole PG-TO247-3-1 (TO-247-3)
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi -55C to +150C (junction, typical for CoolMOS C3) -55°C to +150°C
Configuration Single N-channel, 3 pins (G, D, S) —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL N/A (through-hole) Not Applicable (Through-hole)
Series CoolMOS C3 (600V generation) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]

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