SPW47N60C3 vs IPW60R041C6FKSA1 Perbandingan

Perbandingan bersamaan detil SPW47N60C3 dari Infineon dan IPW60R041C6FKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum SPW47N60C3 IPW60R041C6FKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Part Number SPW47N60C3 —
Manufacturer Infineon Technologies AG —
Technology CoolMOS C3 (superjunction) CoolMOS™ C6 (Superjunction N-channel)
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 650 V —
Continuous Drain Current (ID) at Tc 47 A —
Power Dissipation (PD) at Tc 415 W —
RDS(on) (typical) 70 mOhm [DATA_NEEDED: VGS test condition] —
Gate Charge (Qg, typical) [DATA_NEEDED: nanocoulombs] —
Output Capacitance Eoss @ 400V Very low (per C3 series datasheet) —
Paket TO-247-3-1 (PG-TO247-3-1) through-hole PG-TO247-3-1 (TO-247-3)
Tipe Mounting Through Hole Through Hole
Rentang Suhu Kerja -55C to +150C (junction, typical for CoolMOS C3) -55°C to +150°C
Configuration Single N-channel, 3 pins (G, D, S) —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Level MSL N/A (through-hole) Not Applicable (Through-hole)
Series CoolMOS C3 (600V generation) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]

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