SPW47N60C3 vs IPW60R041C6FKSA1 比較

詳細並排比較 SPW47N60C3 由 Infineon 與 IPW60R041C6FKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 SPW47N60C3 IPW60R041C6FKSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 NRND
Part Number SPW47N60C3 —
Manufacturer Infineon Technologies AG —
Technology CoolMOS C3 (superjunction) CoolMOS™ C6 (Superjunction N-channel)
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 650 V —
Continuous Drain Current (ID) at Tc 47 A —
Power Dissipation (PD) at Tc 415 W —
RDS(on) (typical) 70 mOhm [DATA_NEEDED: VGS test condition] —
Gate Charge (Qg, typical) [DATA_NEEDED: nanocoulombs] —
Output Capacitance Eoss @ 400V Very low (per C3 series datasheet) —
封裝 TO-247-3-1 (PG-TO247-3-1) through-hole PG-TO247-3-1 (TO-247-3)
安裝類型 Through Hole Through Hole
工作溫度範圍 -55C to +150C (junction, typical for CoolMOS C3) -55°C to +150°C
Configuration Single N-channel, 3 pins (G, D, S) —
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
MSL 等級 N/A (through-hole) Not Applicable (Through-hole)
Series CoolMOS C3 (600V generation) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]

資料表與資源

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