H5TC4G63CFR-PBL - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
부품 번호: H5TC4G63CFR-PBL ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
H5TC4G63CFR-PBL 개요
DDR3L SDRAM is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal, doubling the data rate compared to single data rate SDRAM. The 'L' denotes low voltage operation at 1.35V, reducing power consumption by about 15% compared to standard DDR3 at 1.5V. This makes DDR3L a preferred choice for battery-powered and thermally constrained designs.
Key features of the H5TC4G63CFR-PBL include a data rate of 1600 Mbps (PC3L-12800), a burst length of 8, and support for on-die termination (ODT) and posted CAS. The device also features auto refresh and self refresh modes, with a typical refresh period of 7.8 us at 85C. The 96-ball FBGA package provides a compact footprint suitable for high-density PCB layouts.
The H5TC4G63CFR-PBL uses a high-performance CMOS process technology, ensuring fast access times and low power consumption. The memory array is organized into 8 banks, each with 32K rows, providing efficient row activation and precharge operations. The device supports a programmable CAS latency of 11, 12, and 13, allowing flexibility in system timing.
Typical applications include main memory for laptops, ultrabooks, and embedded systems, as well as networking equipment such as routers and switches, and industrial automation controllers. The low voltage and high bandwidth make it suitable for applications requiring high memory density and low power.
When designing with this device, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed data lines.
드롭인 대체품: H5TC4G63CFR-PBL — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5TC4G63CFR-PBL (동일 폼 팩터 및 풋프린트) — 차이점: Package, Burst Length, Data Rate, CAS Latency, Supply Voltage.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5TC4G63CFR-PBA
✅ 드롭인✓ 재고 있음
$6.23 / 개
데이터시트 보기 →H5TC4G63AFR-PBR
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$5.9091 / 개
데이터시트 보기 →H5TC4G63MFR-PBA
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.5 / 개
데이터시트 보기 →K4B4G1646D-BCK00
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$5.9 / 개
데이터시트 보기 →MT41K256M16HA-125
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.3636 / 개
데이터시트 보기 →NT5CC256M16DP-DI
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.5 / 개
데이터시트 보기 →H5TC4G63CFR-PBL 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| 메모리 크기 | 4 Gb (256M x 16) |
| 공급 전압 | 1.35 V |
| 데이터 속도 | 1600 Mbps (PC3L-12800) |
| 패키지 | 96-ball FBGA (TFBGA) |
| Number of Terminals | 96 |
| Package Shape | RECTANGULAR |
| Terminal Form | BALL |
| Burst Length | 8 |
| CAS 레이턴시 | 11, 12, 13 |
| Number of Banks | 8 |
| Refresh Period | 7.8 us at 85C |
| RoHS | Compliant |
| Lead-Free | Yes |
| 할로겐 프리 | Yes |
H5TC4G63CFR-PBL 핀 구성
| 핀 A1 | VDD — Power supply for core logic |
| 핀 A2 | VSS — Ground |
| 핀 B1 | DQ0 — Data input/output 0 |
| 핀 B2 | DQ1 — Data input/output 1 |
| 핀 C1 | VDDQ — Power supply for output buffers |
| 핀 C2 | VSSQ — Ground for output buffers |
| 핀 D1 | DQ2 — Data input/output 2 |
| 핀 D2 | DQ3 — Data input/output 3 |
| 핀 E1 | A0 — Address input 0 |
| 핀 E2 | A1 — Address input 1 |
| 핀 F1 | BA0 — Bank address 0 |
| 핀 F2 | BA1 — Bank address 1 |
| 핀 G1 | CK — Clock input |
| 핀 G2 | CK# — Complementary clock input |
| 핀 H1 | CKE — Clock enable |
| 핀 H2 | CS# — Chip select |
일반적인 애플리케이션
H5TC4G63CFR-PBL 적합 용도: 6 애플리케이션s: Mobile Devices, Embedded Systems, Networking Equipment, Laptops and Ultrabooks, Industrial Automation, Automotive Infotainment.
Mobile Devices
The H5TC4G63CFR-PBL's low 1.35V operation and compact 96-ball FBGA package make it ideal for smartphones and tablets where power efficiency and board space are critical. Its 1600 Mbps data rate supports smooth multitasking and multimedia performance while extending battery life.
추천
Embedded Systems
In embedded systems such as industrial controllers and IoT gateways, the H5TC4G63CFR-PBL provides high memory density with low power consumption. Its 8-bank architecture and programmable CAS latency allow optimization for real-time tasks, while the 1.35V supply reduces thermal load in enclosed environments.
추천
Networking Equipment
Routers, switches, and network appliances benefit from the H5TC4G63CFR-PBL's high bandwidth and low power. The 1600 Mbps data rate handles packet buffering and routing tables efficiently, while the 1.35V operation reduces power dissipation in always-on networking hardware.
추천
Laptops and Ultrabooks
The H5TC4G63CFR-PBL is suitable for main memory in laptops and ultrabooks, offering 4Gb capacity in a small footprint. Its low voltage and self-refresh modes help extend battery life during idle periods, while the high data rate supports demanding applications like video editing and gaming.
추천
Industrial Automation
In industrial automation controllers, the H5TC4G63CFR-PBL provides reliable memory operation over a wide temperature range. Its robust design and low power consumption make it suitable for factory floor environments where heat and vibration are concerns.
추천
Automotive Infotainment
The H5TC4G63CFR-PBL can be used in automotive infotainment systems, providing high memory bandwidth for navigation, multimedia, and connectivity features. Its low voltage operation helps manage thermal constraints in vehicle cabins.
추천
추천 제품 요약
엔지니어링 참조 데이터: H5TC4G63CFR-PBL — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5TC4G63CFR-PBA | H5TC4G63AFR-PBR | K4B4G1646D-BCK00 |
|---|---|---|---|---|
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) | 96-ball FBGA (TFBGA) |
| Brand | SK hynix | SK hynix | SK hynix | Samsung |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
| CAS Latency | 11, 12, 13 | 11, 12, 13 | 11, 12, 13 | 11, 12, 13 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- Low voltage operation at 1.35V (vs K4B4G1646D-BCK00)
- High data rate of 1600 Mbps (vs H5TC4G63CFR-PBA)
- RoHS compliant and halogen-free (vs MT41K256M16HA-125)
설계 노트
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and follow JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed data lines.
The H5TC4G63CFR-PBL operates at 1.35V, reducing power dissipation compared to 1.5V DDR3. However, in high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within the specified range, especially during heavy memory access.
For data rates of 1600 Mbps, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/command lines. Use series termination resistors and avoid stubs to reduce reflections and crosstalk.
규정 준수 정보
Lead-free and halogen-free per datasheet. RoHS compliant.
