K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN: K4B4G1646D-BPH90 ✓ نشطK4B4G1646D-BPH90 نظرة عامة
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BPH90 is specifically a 4Gb density device with a 16-bit data bus, making it suitable for applications requiring moderate memory capacity with high-speed data access.
Key features include a data rate of 2133Mb/s per pin, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). The device includes on-die termination (ODT) for improved signal integrity, ZQ calibration for output driver calibration, and a programmable CAS latency of up to 14. It also features auto precharge, asynchronous reset, and data mask functions. The 96FBGA package measures 13mm x 11.5mm with a 0.8mm ball pitch, enabling high-density PCB layouts.
Technically, the K4B4G1646D-BPH90 uses Samsung's D-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. The device supports a wide operating temperature range of 0°C to +85°C, making it suitable for commercial and industrial applications. It is lead-free and halogen-free, complying with RoHS regulations.
Typical applications include networking equipment (routers, switches), embedded computing systems, industrial automation, and consumer electronics such as set-top boxes and smart TVs. Its high-speed interface and low power consumption make it ideal for systems requiring reliable memory performance.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high data rates. The device requires a 1.35V supply and a separate VDDQ supply, which should be carefully regulated.
بدائل مباشرة لـ K4B4G1646D-BPH90 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K4B4G1646D-BPH90 (نفس عامل الشكل والبصمة) — يختلف في Package, CAS Latency, Data Rate, Operating Temperature, Supply Voltage.
K4B4G1646D-BMH9
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BCH90
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BYH90
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$6.3636 / وحدة
عرض ورقة البيانات ←IS43TR16256A-125KBL
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$19.0909 / وحدة
عرض ورقة البيانات ←W634GU6RB-12
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BPH90 الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4Gb |
| التنظيم | 32M x 16 |
| Number of Banks | 8 |
| معدل البيانات | 2133 Mb/s per pin |
| جهد التغذية | 1.35V (DDR3L) |
| العلبة | 96FBGA |
| درجة حرارة التشغيل | 0°C to +85°C |
| زمن الوصول CAS | Programmable up to 14 |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Lead-Free | Yes |
| خالٍ من الهالوجين | Yes |
| RoHS Compliant | Yes |
تكوين أطراف K4B4G1646D-BPH90
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDDQ — DQ power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس A13 | VDD — Power supply |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDDQ — DQ power supply |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDDQ — DQ power supply |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس B13 | VSS — Ground |
| دبوس C1 | VDD — Power supply |
| دبوس C2 | A0 — Address input 0 |
| دبوس C3 | A1 — Address input 1 |
| دبوس C4 | A2 — Address input 2 |
| دبوس C5 | A3 — Address input 3 |
| دبوس C6 | A4 — Address input 4 |
| دبوس C7 | A5 — Address input 5 |
| دبوس C8 | A6 — Address input 6 |
| دبوس C9 | A7 — Address input 7 |
| دبوس C10 | A8 — Address input 8 |
| دبوس C11 | A9 — Address input 9 |
| دبوس C12 | A10/AP — Address input 10 / Auto precharge |
| دبوس C13 | VSS — Ground |
| دبوس D1 | VSS — Ground |
| دبوس D2 | A11 — Address input 11 |
| دبوس D3 | A12 — Address input 12 |
| دبوس D4 | A13 — Address input 13 |
| دبوس D5 | BA0 — Bank address 0 |
| دبوس D6 | BA1 — Bank address 1 |
| دبوس D7 | BA2 — Bank address 2 |
| دبوس D8 | RAS# — Row address strobe |
| دبوس D9 | CAS# — Column address strobe |
| دبوس D10 | WE# — Write enable |
| دبوس D11 | CS# — Chip select |
| دبوس D12 | CKE — Clock enable |
| دبوس D13 | VDD — Power supply |
| دبوس E1 | VDDQ — DQ power supply |
| دبوس E2 | ODT — On-die termination |
| دبوس E3 | CK — Clock (positive) |
| دبوس E4 | CK# — Clock (negative) |
| دبوس E5 | VSS — Ground |
| دبوس E6 | DM0 — Data mask 0 |
| دبوس E7 | DM1 — Data mask 1 |
| دبوس E8 | VDDQ — DQ power supply |
| دبوس E9 | RESET# — Asynchronous reset |
| دبوس E10 | VSS — Ground |
| دبوس E11 | ZQ — ZQ calibration |
| دبوس E12 | VDD — Power supply |
| دبوس E13 | VSS — Ground |
| دبوس F1 | VSS — Ground |
| دبوس F2 | VDD — Power supply |
| دبوس F3 | VSS — Ground |
| دبوس F4 | VDDQ — DQ power supply |
| دبوس F5 | VSS — Ground |
| دبوس F6 | VDDQ — DQ power supply |
| دبوس F7 | VSS — Ground |
| دبوس F8 | VDDQ — DQ power supply |
| دبوس F9 | VSS — Ground |
| دبوس F10 | VDDQ — DQ power supply |
| دبوس F11 | VSS — Ground |
| دبوس F12 | VDD — Power supply |
| دبوس F13 | VSS — Ground |
التطبيقات النموذجية
K4B4G1646D-BPH90 مناسب لـ 6 التطبيقs: Networking Equipment, Embedded Computing, Industrial Automation, Consumer Electronics, Data Center Servers, Automotive Infotainment.
Networking Equipment
The K4B4G1646D-BPH90 provides high-speed 2133Mb/s data transfer and low power consumption, making it ideal for routers and switches that require fast packet processing and large buffer memory. Its 4Gb density supports heavy traffic loads, while the 1.35V operation reduces thermal dissipation in dense chassis. The 96FBGA package allows compact board designs, and the on-die termination improves signal integrity in high-speed serial links.
موصى به
Embedded Computing
In embedded systems, the K4B4G1646D-BPH90 offers a balance of capacity and speed, with 4Gb density and 2133Mb/s data rate. Its low 1.35V supply is suitable for power-sensitive applications like industrial PCs and single-board computers. The 96FBGA package fits space-constrained designs, and the wide operating temperature range (0°C to +85°C) ensures reliability in harsh environments. The device's auto precharge and ZQ calibration simplify memory controller design.
موصى به
Industrial Automation
The K4B4G1646D-BPH90 is well-suited for industrial automation controllers that require reliable memory with high bandwidth. Its 2133Mb/s data rate enables fast data logging and real-time processing, while the 1.35V operation reduces power consumption in 24/7 operation. The 96FBGA package provides robustness against vibration, and the device's on-die termination helps maintain signal integrity in noisy industrial environments. The 0°C to +85°C temperature range covers most industrial applications.
موصى به
Consumer Electronics
For consumer devices like smart TVs and set-top boxes, the K4B4G1646D-BPH90 provides high-speed memory at low power, enhancing user experience with smooth video playback and fast app loading. The 4Gb density is sufficient for modern multimedia applications, and the 1.35V supply helps meet energy efficiency standards. The compact 96FBGA package enables slim device designs, and the device's low power consumption extends battery life in portable consumer electronics.
موصى به
Data Center Servers
In data center servers, the K4B4G1646D-BPH90 offers high bandwidth and capacity for virtualization and cloud computing workloads. Its 2133Mb/s data rate supports fast data access, while the 1.35V operation reduces power consumption in large server farms. The 96FBGA package allows high-density memory modules, and the device's on-die termination improves signal integrity in high-speed server memory channels. The 0°C to +85°C range is suitable for server environments.
موصى به
Automotive Infotainment
The K4B4G1646D-BPH90 is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its 2133Mb/s data rate ensures smooth graphics and video playback, while the 1.35V supply reduces power consumption in vehicles. The 96FBGA package is compact and robust, and the device's wide temperature range (0°C to +85°C) covers most automotive cabin environments. On-die termination helps maintain signal integrity in the presence of electromagnetic interference.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K4B4G1646D-BPH90 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K4B4G1646D-BMH9 | K4B4G1646D-BCH90 | K4B4G1646D-BYH90 | MT41K256M16HA-125 | IS43TR16256A-125KBL | W634GU6RB-12 |
|---|---|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | ISSI | Winbond |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Data Rate | 2133 Mb/s | 1866 Mb/s | 1600 Mb/s | 1866 Mb/s | 1600 Mb/s | 1600 Mb/s | 1866 Mb/s |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
أبرز الفروقات
- Higher data rate of 2133Mb/s (مقابلK4B4G1646D-BCH90)
- DDR3L low voltage operation (مقابلStandard DDR3 (1.5V))
- Samsung D-die process (مقابلOlder die revisions)
ملاحظات التصميم
The K4B4G1646D-BPH90 requires a 1.35V VDD supply and a separate VDDQ supply. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize power supply noise. Ensure the power plane has adequate copper area to handle transient currents during read/write operations.
Follow the layout guidelines in the Samsung datasheet for high-speed DDR3L signals. Maintain controlled impedance for DQ, DQS, and address/command lines (typically 40-60 ohms). Keep trace lengths matched within +/- 10 mils for data and strobe pairs to ensure signal integrity at 2133Mb/s.
The device operates up to +85°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96FBGA package has a thermal resistance that should be considered; use thermal vias under the package to improve heat dissipation to the PCB ground plane.
معلومات الامتثال
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
