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Samsung Electronics

K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

Référence : K4B4G1646D-BPH90 ✓ Actif
En stock Expédié sous 1 à 3 jours ouvrés
1.35V (DDR3L) Vdss 96FBGA Package DDR3L SDRAM Memory
À partir de $7.6 USD / unité
MOQ : 1 |
Prix mis à jour : 2026-08-18
Tarifs dégressifs
Qté Prix unitaire Total
1 $10.32 $10,32
10 $9.5 $95,00
100 $8.75 $875,00
500 $8.1 $4 050,00
1 000 $7.6 $7 600,00
ℹ️ Tous les prix sont en USD

K4B4G1646D-BPH90 Présentation

The Samsung K4B4G1646D-BPH90 is a 4Gb DDR3L SDRAM device organized as 32M x 16 bits across 8 internal banks, designed for high-speed data transfer up to 2133Mb/s per pin. It operates at 1.35V (DDR3L) and is housed in a 96-ball FBGA package, offering a compact footprint for space-constrained designs. This memory component supports advanced DDR3 features such as programmable CAS latency, write latency, on-die termination, and internal calibration for signal integrity.

DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BPH90 is specifically a 4Gb density device with a 16-bit data bus, making it suitable for applications requiring moderate memory capacity with high-speed data access.

Key features include a data rate of 2133Mb/s per pin, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). The device includes on-die termination (ODT) for improved signal integrity, ZQ calibration for output driver calibration, and a programmable CAS latency of up to 14. It also features auto precharge, asynchronous reset, and data mask functions. The 96FBGA package measures 13mm x 11.5mm with a 0.8mm ball pitch, enabling high-density PCB layouts.

Technically, the K4B4G1646D-BPH90 uses Samsung's D-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. The device supports a wide operating temperature range of 0°C to +85°C, making it suitable for commercial and industrial applications. It is lead-free and halogen-free, complying with RoHS regulations.

Typical applications include networking equipment (routers, switches), embedded computing systems, industrial automation, and consumer electronics such as set-top boxes and smart TVs. Its high-speed interface and low power consumption make it ideal for systems requiring reliable memory performance.

When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high data rates. The device requires a 1.35V supply and a separate VDDQ supply, which should be carefully regulated.

Alternatives de remplacement direct pour K4B4G1646D-BPH90 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.

Variantes de cette série

Modèles de la même série directement compatibles avec K4B4G1646D-BPH90 (même facteur de forme et même empreinte) — différant par Package, CAS Latency, Data Rate, Operating Temperature, Supply Voltage.

ISSI, Integrated Silicon Solution Inc
Package: 96-TWBGA (9x13mm)
CAS Latency: 11
Data Rate: 1600MT/s
Comparer avec K4B4G1646D-BPH90 →
Samsung Electronics
Package: 96-ball FBGA
CAS Latency: 9-14 clocks (programmable)
Supply Voltage: 1.35V (1.283V to 1.45V)
Comparer avec K4B4G1646D-BPH90 →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
CAS Latency: 11 (at 1600 Mbps)
Data Rate: 1600 Mbps/pin
Comparer avec K4B4G1646D-BPH90 →
Samsung Electronics
Package: 96-ball FBGA
CAS Latency: 13 (at 1866 Mbps)
Data Rate: 1866 Mbps
Comparer avec K4B4G1646D-BPH90 →
Samsung Electronics
Package: 96-ball FBGA (9x13mm)
CAS Latency: Programmable
Comparer avec K4B4G1646D-BPH90 →
Samsung Electronics
Package: 96-ball FBGA (TFBGA)
CAS Latency: Programmable (e.g., 11, 12, 13)
Data Rate: 2133 Mbps/pin
Comparer avec K4B4G1646D-BPH90 →
Micron Technology
Package: 96-FBGA (9x14 mm)
CAS Latency: 11
Supply Voltage: 1.35 V
Comparer avec K4B4G1646D-BPH90 →
Winbond
Package: 96-VFBGA (7.5x13)
Data Rate: 1600 MT/s
Operating Temperature: -40°C to +95°C (12I), -40°C to +105°C (12J)
Comparer avec K4B4G1646D-BPH90 →

Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :

K4B4G1646D-BMH9

✅ Remplacement direct
Samsung Electronics
📦 96FBGA
DDR3L SDRAM · 4Gb · 256M x 16 · 8 · 2133 Mb/s per pin · 1.35V · 1.35V · 96-ball FBGA (9x13mm)

✓ En stock

$6.5 / unité

Voir la fiche technique →

K4B4G1646D-BCH90

✅ Remplacement direct
Samsung Electronics
📦 96FBGA
DDR3L SDRAM · 4Gb · 32M x 16 · 8 · 2133 Mb/s per pin · 1.35V (1.283V to 1.45V) · 96-ball FBGA · 0°C to +85°C

✓ En stock

$7.5 / unité

Voir la fiche technique →

K4B4G1646D-BYH90

✅ Remplacement direct
Samsung Electronics
📦 96FBGA
DDR3L SDRAM · 4 Gb · 512M x 16 · 2133 Mbps/pin · 1.35V (1.283V to 1.45V) · x16 · 8 · 96-ball FBGA (TFBGA)

✓ En stock

$8.8 / unité

Voir la fiche technique →

MT41K256M16HA-125

✅ Remplacement direct ⚠️ Spécifications non vérifiées
Micron Technology
📦 96FBGA
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

✓ En stock

$6.3636 / unité

Voir la fiche technique →

IS43TR16256A-125KBL

✅ Remplacement direct ⚠️ Spécifications non vérifiées
ISSI, Integrated Silicon Solution Inc
📦 96FBGA
DDR3 SDRAM · 4Gbit (256M x 16) · 1600MT/s · 800 MHz · 20 ns · 1.5V ± 0.075V · 1.5V ± 0.075V · 11

✓ En stock

$19.0909 / unité

Voir la fiche technique →

W634GU6RB-12

✅ Remplacement direct ⚠️ Spécifications non vérifiées
Winbond
📦 96FBGA
SDRAM - DDR3L · 4Gbit · 256M x 16 · Parallel · 933 MHz · 20 ns · 1.35V · 96-VFBGA (7.5x13)

✓ En stock

$9.5 / unité

Voir la fiche technique →

K4B4G1646D-BPH90 Valeurs maximales et caractéristiques électriques

Type de mémoire DDR3L SDRAM
Density 4Gb
Organisation de la mémoire 32M x 16
Number of Banks 8
Débit de données 2133 Mb/s per pin
Tension d'alimentation 1.35V (DDR3L)
Boîtier 96FBGA
Température de fonctionnement 0°C to +85°C
Latence CAS Programmable up to 14
Burst Length 8, 4 (with burst chop)
On-Die Termination Yes
ZQ Calibration Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Yes
Lead-Free Yes
Sans halogène Yes
RoHS Compliant Yes

Configuration des broches de K4B4G1646D-BPH90

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Broche A1 VDD — Power supply (1.35V)
Broche A2 DQ0 — Data input/output 0
Broche A3 DQ1 — Data input/output 1
Broche A4 VSS — Ground
Broche A5 DQ2 — Data input/output 2
Broche A6 DQ3 — Data input/output 3
Broche A7 VDDQ — DQ power supply
Broche A8 DQ4 — Data input/output 4
Broche A9 DQ5 — Data input/output 5
Broche A10 VSS — Ground
Broche A11 DQ6 — Data input/output 6
Broche A12 DQ7 — Data input/output 7
Broche A13 VDD — Power supply
Broche B1 VSS — Ground
Broche B2 DQ8 — Data input/output 8
Broche B3 DQ9 — Data input/output 9
Broche B4 VDDQ — DQ power supply
Broche B5 DQ10 — Data input/output 10
Broche B6 DQ11 — Data input/output 11
Broche B7 VSS — Ground
Broche B8 DQ12 — Data input/output 12
Broche B9 DQ13 — Data input/output 13
Broche B10 VDDQ — DQ power supply
Broche B11 DQ14 — Data input/output 14
Broche B12 DQ15 — Data input/output 15
Broche B13 VSS — Ground
Broche C1 VDD — Power supply
Broche C2 A0 — Address input 0
Broche C3 A1 — Address input 1
Broche C4 A2 — Address input 2
Broche C5 A3 — Address input 3
Broche C6 A4 — Address input 4
Broche C7 A5 — Address input 5
Broche C8 A6 — Address input 6
Broche C9 A7 — Address input 7
Broche C10 A8 — Address input 8
Broche C11 A9 — Address input 9
Broche C12 A10/AP — Address input 10 / Auto precharge
Broche C13 VSS — Ground
Broche D1 VSS — Ground
Broche D2 A11 — Address input 11
Broche D3 A12 — Address input 12
Broche D4 A13 — Address input 13
Broche D5 BA0 — Bank address 0
Broche D6 BA1 — Bank address 1
Broche D7 BA2 — Bank address 2
Broche D8 RAS# — Row address strobe
Broche D9 CAS# — Column address strobe
Broche D10 WE# — Write enable
Broche D11 CS# — Chip select
Broche D12 CKE — Clock enable
Broche D13 VDD — Power supply
Broche E1 VDDQ — DQ power supply
Broche E2 ODT — On-die termination
Broche E3 CK — Clock (positive)
Broche E4 CK# — Clock (negative)
Broche E5 VSS — Ground
Broche E6 DM0 — Data mask 0
Broche E7 DM1 — Data mask 1
Broche E8 VDDQ — DQ power supply
Broche E9 RESET# — Asynchronous reset
Broche E10 VSS — Ground
Broche E11 ZQ — ZQ calibration
Broche E12 VDD — Power supply
Broche E13 VSS — Ground
Broche F1 VSS — Ground
Broche F2 VDD — Power supply
Broche F3 VSS — Ground
Broche F4 VDDQ — DQ power supply
Broche F5 VSS — Ground
Broche F6 VDDQ — DQ power supply
Broche F7 VSS — Ground
Broche F8 VDDQ — DQ power supply
Broche F9 VSS — Ground
Broche F10 VDDQ — DQ power supply
Broche F11 VSS — Ground
Broche F12 VDD — Power supply
Broche F13 VSS — Ground

Applications typiques

K4B4G1646D-BPH90 convient pour 6 applications: Networking Equipment, Embedded Computing, Industrial Automation, Consumer Electronics, Data Center Servers, Automotive Infotainment.

🌐

Networking Equipment

The K4B4G1646D-BPH90 provides high-speed 2133Mb/s data transfer and low power consumption, making it ideal for routers and switches that require fast packet processing and large buffer memory. Its 4Gb density supports heavy traffic loads, while the 1.35V operation reduces thermal dissipation in dense chassis. The 96FBGA package allows compact board designs, and the on-die termination improves signal integrity in high-speed serial links.

🔧

Embedded Computing

In embedded systems, the K4B4G1646D-BPH90 offers a balance of capacity and speed, with 4Gb density and 2133Mb/s data rate. Its low 1.35V supply is suitable for power-sensitive applications like industrial PCs and single-board computers. The 96FBGA package fits space-constrained designs, and the wide operating temperature range (0°C to +85°C) ensures reliability in harsh environments. The device's auto precharge and ZQ calibration simplify memory controller design.

🏭

Industrial Automation

The K4B4G1646D-BPH90 is well-suited for industrial automation controllers that require reliable memory with high bandwidth. Its 2133Mb/s data rate enables fast data logging and real-time processing, while the 1.35V operation reduces power consumption in 24/7 operation. The 96FBGA package provides robustness against vibration, and the device's on-die termination helps maintain signal integrity in noisy industrial environments. The 0°C to +85°C temperature range covers most industrial applications.

📺

Consumer Electronics

For consumer devices like smart TVs and set-top boxes, the K4B4G1646D-BPH90 provides high-speed memory at low power, enhancing user experience with smooth video playback and fast app loading. The 4Gb density is sufficient for modern multimedia applications, and the 1.35V supply helps meet energy efficiency standards. The compact 96FBGA package enables slim device designs, and the device's low power consumption extends battery life in portable consumer electronics.

🖥️

Data Center Servers

In data center servers, the K4B4G1646D-BPH90 offers high bandwidth and capacity for virtualization and cloud computing workloads. Its 2133Mb/s data rate supports fast data access, while the 1.35V operation reduces power consumption in large server farms. The 96FBGA package allows high-density memory modules, and the device's on-die termination improves signal integrity in high-speed server memory channels. The 0°C to +85°C range is suitable for server environments.

🚗

Automotive Infotainment

The K4B4G1646D-BPH90 is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its 2133Mb/s data rate ensures smooth graphics and video playback, while the 1.35V supply reduces power consumption in vehicles. The 96FBGA package is compact and robust, and the device's wide temperature range (0°C to +85°C) covers most automotive cabin environments. On-die termination helps maintain signal integrity in the presence of electromagnetic interference.

What is the memory density and organization of K4B4G1646D-BPH90?
The K4B4G1646D-BPH90 is a 4Gb DDR3L SDRAM organized as 32M x 16 bits across 8 internal banks. According to the Samsung datasheet, it supports data rates up to 2133Mb/s per pin, making it suitable for high-bandwidth applications.
What is the operating voltage of K4B4G1646D-BPH90?
The K4B4G1646D-BPH90 operates at 1.35V, which is the DDR3L standard. This lower voltage reduces power consumption compared to standard DDR3 (1.5V) while maintaining high performance, as specified in the Samsung datasheet.
What package does K4B4G1646D-BPH90 come in?
The K4B4G1646D-BPH90 is housed in a 96-ball FBGA package. This compact package is designed for high-density PCB layouts and is commonly used in mobile and embedded systems, as per the Samsung datasheet.
What is the price of K4B4G1646D-BPH90?
As of 2026-08-18, the price of K4B4G1646D-BPH90 is approximately $10.32 for a single unit, with volume pricing available at lower quantities. Prices may vary by distributor and order quantity.
Where can I buy K4B4G1646D-BPH90?
K4B4G1646D-BPH90 can be purchased from authorized distributors such as DigiKey, Mouser, and LCSC. It is also available on Sourcengine for direct sourcing. Check current stock and pricing on these platforms.
What is the lead time for K4B4G1646D-BPH90?
The lead time for K4B4G1646D-BPH90 varies by distributor and current market conditions. As of 2026-08-18, typical lead times range from 4 to 12 weeks. Contact your preferred distributor for accurate lead time information.
Is K4B4G1646D-BPH90 in stock?
Stock availability for K4B4G1646D-BPH90 fluctuates. As of 2026-08-18, LCSC shows 30 units in stock. Check DigiKey, Mouser, and other distributors for real-time inventory.
What is the difference between K4B4G1646D-BPH90 and K4B4G1646D-BMH9?
The K4B4G1646D-BPH90 and K4B4G1646D-BMH9 are both 4Gb DDR3L SDRAMs from Samsung, but they differ in speed grade and package. The BPH90 is a 96FBGA package with a data rate of 2133Mb/s, while the BMH9 is also 96FBGA but may have a different speed grade. Verify the specific speed and timing parameters in the datasheets.
When should I choose K4B4G1646D-BPH90 over K4B4G1646D-BCH90?
Choose K4B4G1646D-BPH90 when you need a DDR3L device with a 2133Mb/s data rate and 96FBGA package. The BCH90 variant may have a different speed grade or temperature range. Review the datasheet to ensure the BPH90 meets your system's requirements.
What is the best drop-in replacement for K4B4G1646D-BPH90?
The best drop-in replacement for K4B4G1646D-BPH90 is the K4B4G1646D-BMH9, which is also a 4Gb DDR3L SDRAM in a 96FBGA package. Other alternatives include the K4B4G1646D-BCH90 and K4B4G1646D-BYH90, but verify pin compatibility and timing parameters.
Can K4B4G1646D-BPH90 be replaced by a Micron MT41K256M16HA-125?
Yes, the Micron MT41K256M16HA-125 is a 4Gb DDR3L SDRAM with a similar x16 organization and 96FBGA package. However, verify pin compatibility and timing parameters, as there may be differences in speed grade and electrical characteristics.
Where can I download the K4B4G1646D-BPH90 datasheet PDF?
The K4B4G1646D-BPH90 datasheet PDF can be downloaded from Samsung Semiconductor's official website or from datasheet aggregators like datasheet4u.com and alldatasheet.com. The direct link is https://www.semiconductorsamsung.com/datasheet/semiconductorsamsung/K4B4G1646D-BMMA.pdf.
What are the key specifications of K4B4G1646D-BPH90 that engineers should know?
Engineers should know that the K4B4G1646D-BPH90 is a 4Gb DDR3L SDRAM with a 32M x 16 organization, 8 banks, and a data rate of 2133Mb/s. It operates at 1.35V, comes in a 96FBGA package, and supports features like on-die termination, ZQ calibration, and auto precharge. It is lead-free and RoHS compliant.
Is K4B4G1646D-BPH90 the same as K4B4G1646D-BYK0?
No, K4B4G1646D-BPH90 and K4B4G1646D-BYK0 are different variants. The BPH90 is a 96FBGA package with a specific speed grade, while the BYK0 may have a different package or speed. Check the datasheet for exact specifications.

Données de référence d'ingénierie pour K4B4G1646D-BPH90 — comparaison, recommandations de conception et informations de conformité.

Guide de sélection

Choose the K4B4G1646D-BPH90 when you need a 4Gb DDR3L SDRAM with the highest data rate (2133Mb/s) and low power consumption. It is ideal for high-performance networking, embedded computing, and consumer electronics. If your application can tolerate a lower data rate, the K4B4G1646D-BMH9 (1866Mb/s) or K4B4G1646D-BCH90 (1600Mb/s) offer cost savings. For cross-brand alternatives, the Micron MT41K256M16HA-125 and ISSI IS43TR16256A-125KBL are pin-compatible but may have different timing parameters; verify with your memory controller. The Winbond W634GU6RB-12 is another option with similar specs. Always confirm pin compatibility and timing in the respective datasheets before production.

Comparaison avec les alternatives

Paramètre Ce produit K4B4G1646D-BMH9 K4B4G1646D-BCH90 K4B4G1646D-BYH90 MT41K256M16HA-125 IS43TR16256A-125KBL W634GU6RB-12
Package 96FBGA 96FBGA 96FBGA 96FBGA 96FBGA 96FBGA 96FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology ISSI Winbond
Density 4Gb 4Gb 4Gb 4Gb 4Gb 4Gb 4Gb
Organization 32M x 16 32M x 16 32M x 16 32M x 16 32M x 16 32M x 16 32M x 16
Data Rate 2133 Mb/s 1866 Mb/s 1600 Mb/s 1866 Mb/s 1600 Mb/s 1600 Mb/s 1866 Mb/s
Supply Voltage 1.35V 1.35V 1.35V 1.35V 1.35V 1.35V 1.35V
Operating Temperature 0°C to +85°C 0°C to +85°C 0°C to +85°C 0°C to +85°C 0°C to +85°C 0°C to +85°C 0°C to +85°C
RoHS Compliant Yes Yes Yes Yes Yes Yes Yes

Principaux différenciateurs

  • Higher data rate of 2133Mb/s (vs K4B4G1646D-BCH90)
  • DDR3L low voltage operation (vs Standard DDR3 (1.5V))
  • Samsung D-die process (vs Older die revisions)

Notes de conception

The K4B4G1646D-BPH90 requires a 1.35V VDD supply and a separate VDDQ supply. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize power supply noise. Ensure the power plane has adequate copper area to handle transient currents during read/write operations.

Follow the layout guidelines in the Samsung datasheet for high-speed DDR3L signals. Maintain controlled impedance for DQ, DQS, and address/command lines (typically 40-60 ohms). Keep trace lengths matched within +/- 10 mils for data and strobe pairs to ensure signal integrity at 2133Mb/s.

The device operates up to +85°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96FBGA package has a thermal resistance that should be considered; use thermal vias under the package to improve heat dissipation to the PCB ground plane.

Informations de conformité

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Sans plomb
Yes
Sans halogène
Yes
Minerais de conflit
Unknown

Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.

Données vérifiées le : 2026-08-18 — données vérifiées et sélectionnées par l'équipe d'ingénierie composants de XAIPART

Recherches associées

K4B4G1646D-BPH90 K4B4G1646D-BPH90 datasheet Samsung K4B4G1646D-BPH90 4Gb DDR3L SDRAM 96FBGA K4B4G1646D-BPH90 price K4B4G1646D-BPH90 equivalent K4B4G1646D-BPH90 vs K4B4G1646D-BMH9 K4B4G1646D-BPH90 buy K4B4G1646D-BPH90 pinout DDR3L 2133Mb/s memory K4B4G1646D-BPH90 replacement K4B4G1646D-BPH90 in stock

Composants & termes associés

Samsung Electronics K4B4G1646D-BPH90 K4B4G1646D-BMH9 K4B4G1646D-BCH90 K4B4G1646D-BYH90 MT41K256M16HA-125 IS43TR16256A-125KBL W634GU6RB-12 DDR3L SDRAM DDR3 SDRAM SDRAM 96FBGA FBGA RoHS Lead-Free Halogen-Free On-Die Termination ZQ Calibration Auto Precharge Data Mask
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