K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN: K4B4G1646D-BCH90 ✓ نشطK4B4G1646D-BCH90 نظرة عامة
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks.
Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks.
When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.
بدائل مباشرة لـ K4B4G1646D-BCH90 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K4B4G1646D-BCH90 (نفس عامل الشكل والبصمة) — يختلف في Supply Voltage, CAS Latency, Package, Burst Length, Data Rate.
K4B4G1646D-BHMA
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BYK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BCMA
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
K4B4G1646D-BFMA
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BMMA
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63AFR
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
K4B4G1646D-BCH90 الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4Gb |
| التنظيم | 32M x 16 |
| Number of Banks | 8 |
| معدل البيانات | 2133 Mb/s per pin |
| جهد التغذية | 1.35V (1.283V to 1.45V) |
| العلبة | 96-ball FBGA |
| درجة حرارة التشغيل | 0°C to +85°C |
| زمن الوصول CAS | 9-14 clocks (programmable) |
| Burst Length | 8 and 4 |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS Compliant | Yes |
| Lead-Free | Yes |
| خالٍ من الهالوجين | Yes |
تكوين أطراف K4B4G1646D-BCH90
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDD — Power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDD — Power supply |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDD — Power supply |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDDQ — I/O power supply |
| دبوس C2 | VSSQ — I/O ground |
| دبوس C3 | VDDQ — I/O power supply |
| دبوس C4 | VSSQ — I/O ground |
| دبوس C5 | VDDQ — I/O power supply |
| دبوس C6 | VSSQ — I/O ground |
| دبوس C7 | VDDQ — I/O power supply |
| دبوس C8 | VSSQ — I/O ground |
| دبوس C9 | VDDQ — I/O power supply |
| دبوس C10 | VSSQ — I/O ground |
| دبوس C11 | VDDQ — I/O power supply |
| دبوس C12 | VSSQ — I/O ground |
| دبوس D1 | A0 — Address input 0 |
| دبوس D2 | A1 — Address input 1 |
| دبوس D3 | A2 — Address input 2 |
| دبوس D4 | A3 — Address input 3 |
| دبوس D5 | A4 — Address input 4 |
| دبوس D6 | A5 — Address input 5 |
| دبوس D7 | A6 — Address input 6 |
| دبوس D8 | A7 — Address input 7 |
| دبوس D9 | A8 — Address input 8 |
| دبوس D10 | A9 — Address input 9 |
| دبوس D11 | A10/AP — Address input 10 / auto precharge |
| دبوس D12 | A11 — Address input 11 |
| دبوس E1 | A12 — Address input 12 |
| دبوس E2 | A13 — Address input 13 |
| دبوس E3 | A14 — Address input 14 |
| دبوس E4 | BA0 — Bank address 0 |
| دبوس E5 | BA1 — Bank address 1 |
| دبوس E6 | BA2 — Bank address 2 |
| دبوس E7 | RAS# — Row address strobe |
| دبوس E8 | CAS# — Column address strobe |
| دبوس E9 | WE# — Write enable |
| دبوس E10 | CS# — Chip select |
| دبوس E11 | CKE — Clock enable |
| دبوس E12 | ODT — On-die termination |
| دبوس F1 | CK — Clock |
| دبوس F2 | CK# — Complementary clock |
| دبوس F3 | VDD — Power supply |
| دبوس F4 | VSS — Ground |
| دبوس F5 | VDD — Power supply |
| دبوس F6 | VSS — Ground |
| دبوس F7 | VDD — Power supply |
| دبوس F8 | VSS — Ground |
| دبوس F9 | VDD — Power supply |
| دبوس F10 | VSS — Ground |
| دبوس F11 | VDD — Power supply |
| دبوس F12 | VSS — Ground |
| دبوس G1 | DM0 — Data mask 0 |
| دبوس G2 | DM1 — Data mask 1 |
| دبوس G3 | VSS — Ground |
| دبوس G4 | VDD — Power supply |
| دبوس G5 | VSS — Ground |
| دبوس G6 | VDD — Power supply |
| دبوس G7 | VSS — Ground |
| دبوس G8 | VDD — Power supply |
| دبوس G9 | VSS — Ground |
| دبوس G10 | VDD — Power supply |
| دبوس G11 | VSS — Ground |
| دبوس G12 | VDD — Power supply |
| دبوس H1 | ZQ — Calibration reference |
| دبوس H2 | VSS — Ground |
| دبوس H3 | VDD — Power supply |
| دبوس H4 | VSS — Ground |
| دبوس H5 | VDD — Power supply |
| دبوس H6 | VSS — Ground |
| دبوس H7 | VDD — Power supply |
| دبوس H8 | VSS — Ground |
| دبوس H9 | VDD — Power supply |
| دبوس H10 | VSS — Ground |
| دبوس H11 | VDD — Power supply |
| دبوس H12 | VSS — Ground |
| دبوس J1 | NC — No connect |
| دبوس J2 | NC — No connect |
| دبوس J3 | NC — No connect |
| دبوس J4 | NC — No connect |
| دبوس J5 | NC — No connect |
| دبوس J6 | NC — No connect |
| دبوس J7 | NC — No connect |
| دبوس J8 | NC — No connect |
| دبوس J9 | NC — No connect |
| دبوس J10 | NC — No connect |
| دبوس J11 | NC — No connect |
| دبوس J12 | NC — No connect |
التطبيقات النموذجية
K4B4G1646D-BCH90 مناسب لـ 6 التطبيقs: Mobile Devices, Consumer Electronics, Networking Equipment, Embedded Systems, Computing Systems, Automotive Infotainment.
Mobile Devices
The K4B4G1646D-BCH90's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets where power efficiency and compact size are critical. Its 2133Mb/s data rate supports high-bandwidth applications like HD video and gaming. The 96-ball FBGA package fits tight PCB layouts, and the commercial temperature range covers typical mobile use cases.
موصى به
Consumer Electronics
In consumer devices like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCH90 provides the memory bandwidth needed for smooth multimedia playback and responsive user interfaces. Its 4Gb density supports multiple applications simultaneously, while the low voltage reduces overall system power. The FBGA package enables slim product designs.
موصى به
Networking Equipment
Routers, switches, and network appliances require high-speed memory for packet buffering and routing tables. The K4B4G1646D-BCH90's 2133Mb/s data rate and 4Gb density provide ample bandwidth and capacity. Its low power consumption is beneficial in always-on networking gear, and the commercial temperature range suits indoor environments.
موصى به
Embedded Systems
For industrial and embedded applications, the K4B4G1646D-BCH90 offers reliable DDR3L memory with a wide operating temperature range (0°C to +85°C). Its 4Gb density supports complex firmware and data logging. The 96-ball FBGA package is robust for harsh environments, and the low voltage reduces heat generation.
موصى به
Computing Systems
In laptops, mini-PCs, and servers, the K4B4G1646D-BCH90 provides high-density, low-power memory for multitasking and data-intensive workloads. Its 2133Mb/s speed ensures fast data access, while the 1.35V operation extends battery life in portable devices. The FBGA package is standard for SODIMM and board-down designs.
موصى به
Automotive Infotainment
Although the K4B4G1646D-BCH90 has a commercial temperature range, it can be used in automotive infotainment systems with proper thermal management. Its 4Gb density supports navigation, multimedia, and connectivity features. The low power consumption is beneficial for vehicle electrical systems, and the FBGA package withstands vibration.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K4B4G1646D-BCH90 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K4B4G1646D-BHMA | K4B4G1646D-BYK0 | K4B4G1646E-BMMA | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
أبرز الفروقات
- Low voltage operation at 1.35V (مقابلMT41K256M16HA-125)
- High data rate of 2133Mb/s (مقابلMT41K256M16HA-125)
- D-die process technology (مقابلK4B4G1646E-BMMA)
ملاحظات التصميم
For reliable DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply.
Use on-die termination (ODT) settings to match the memory bus impedance. The ZQ pin requires a 240-ohm resistor to ground for calibration. Ensure the reference voltage (VREF) is clean and stable, typically generated by a resistor divider or dedicated regulator. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4B4G1646D-BCH90 operates up to +85°C. In high-density designs, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive or industrial environments, consider a wider temperature grade if available.
معلومات الامتثال
RoHS compliant, lead-free, and halogen-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
