K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646D-BHMA ✓ نشطK4B4G1646D-BHMA نظرة عامة
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 256M x 16 organization, 1866 Mbps data rate, and 1.35V operation. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto refresh and self refresh modes, and is compatible with JEDEC DDR3L standards. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646D-BHMA uses a D-die process, which offers improved performance and power characteristics compared to earlier dies. It supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for signal integrity. The device operates over a temperature range of -40°C to +95°C (TC), making it suitable for industrial applications.
Typical applications include personal computing devices, mobile phones, tablets, digital cameras, printers, networking equipment, industrial machinery, medical devices, automotive electronics, and solid-state drives. Its low voltage and high density make it ideal for power-sensitive portable devices and high-performance computing platforms.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. Also, verify the timing parameters for your specific application, as DDR3L timing is critical for reliable operation.
بدائل مباشرة لـ K4B4G1646D-BHMA — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K4B4G1646D-BHMA (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, Operating Temperature, Supply Voltage, CAS Latency.
K4B4G1646E-BMK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BMK0
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BPH90
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BFMA
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BYMA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$14.3182 / وحدة
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$6.3636 / وحدة
عرض ورقة البيانات ←H5TC4G63AFR-PBA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$3.9773 / وحدة
عرض ورقة البيانات ←IS43TR16256AL-125KBL
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BHMA الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4 Gb |
| التنظيم | 256M x 16 |
| معدل البيانات | 1866 Mbps |
| جهد التغذية | 1.35 V (1.283 V to 1.45 V) |
| العلبة | 96-ball FBGA |
| درجة حرارة التشغيل | -40°C to +95°C (TC) |
| زمن الوصول CAS | 13 (at 1866 Mbps) |
| Burst Length | 8 and 4 |
| Number of Terminals | 96 |
| Lead-Free | Yes |
| خالٍ من الهالوجين | Yes |
| RoHS Compliant | Yes |
| Die Version | D-die |
| Refresh Mode | Auto and Self Refresh |
تكوين أطراف K4B4G1646D-BHMA
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDD — Power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDD — Power supply |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDD — Power supply |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDDQ — DQ power supply |
| دبوس C2 | VSSQ — DQ ground |
| دبوس C3 | VDDQ — DQ power supply |
| دبوس C4 | VSSQ — DQ ground |
| دبوس C5 | VDDQ — DQ power supply |
| دبوس C6 | VSSQ — DQ ground |
| دبوس C7 | VDDQ — DQ power supply |
| دبوس C8 | VSSQ — DQ ground |
| دبوس C9 | VDDQ — DQ power supply |
| دبوس C10 | VSSQ — DQ ground |
| دبوس C11 | VDDQ — DQ power supply |
| دبوس C12 | VSSQ — DQ ground |
| دبوس D1 | A0 — Address input 0 |
| دبوس D2 | A1 — Address input 1 |
| دبوس D3 | A2 — Address input 2 |
| دبوس D4 | A3 — Address input 3 |
| دبوس D5 | A4 — Address input 4 |
| دبوس D6 | A5 — Address input 5 |
| دبوس D7 | A6 — Address input 6 |
| دبوس D8 | A7 — Address input 7 |
| دبوس D9 | A8 — Address input 8 |
| دبوس D10 | A9 — Address input 9 |
| دبوس D11 | A10/AP — Address input 10 / Auto-precharge |
| دبوس D12 | A11 — Address input 11 |
| دبوس E1 | A12 — Address input 12 |
| دبوس E2 | A13 — Address input 13 |
| دبوس E3 | A14 — Address input 14 |
| دبوس E4 | BA0 — Bank address 0 |
| دبوس E5 | BA1 — Bank address 1 |
| دبوس E6 | BA2 — Bank address 2 |
| دبوس E7 | RAS# — Row address strobe |
| دبوس E8 | CAS# — Column address strobe |
| دبوس E9 | WE# — Write enable |
| دبوس E10 | CS# — Chip select |
| دبوس E11 | CKE — Clock enable |
| دبوس E12 | ODT — On-die termination |
| دبوس F1 | CK — Clock positive |
| دبوس F2 | CK# — Clock negative |
| دبوس F3 | VDD — Power supply |
| دبوس F4 | VSS — Ground |
| دبوس F5 | VDD — Power supply |
| دبوس F6 | VSS — Ground |
| دبوس F7 | VDD — Power supply |
| دبوس F8 | VSS — Ground |
| دبوس F9 | VDD — Power supply |
| دبوس F10 | VSS — Ground |
| دبوس F11 | VDD — Power supply |
| دبوس F12 | VSS — Ground |
| دبوس G1 | DM0 — Data mask 0 |
| دبوس G2 | DM1 — Data mask 1 |
| دبوس G3 | DQS0 — Data strobe 0 |
| دبوس G4 | DQS0# — Data strobe 0 complement |
| دبوس G5 | DQS1 — Data strobe 1 |
| دبوس G6 | DQS1# — Data strobe 1 complement |
| دبوس G7 | DQS2 — Data strobe 2 |
| دبوس G8 | DQS2# — Data strobe 2 complement |
| دبوس G9 | DQS3 — Data strobe 3 |
| دبوس G10 | DQS3# — Data strobe 3 complement |
| دبوس G11 | VDD — Power supply |
| دبوس G12 | VSS — Ground |
| دبوس H1 | VSS — Ground |
| دبوس H2 | VDD — Power supply |
| دبوس H3 | VSS — Ground |
| دبوس H4 | VDD — Power supply |
| دبوس H5 | VSS — Ground |
| دبوس H6 | VDD — Power supply |
| دبوس H7 | VSS — Ground |
| دبوس H8 | VDD — Power supply |
| دبوس H9 | VSS — Ground |
| دبوس H10 | VDD — Power supply |
| دبوس H11 | VSS — Ground |
| دبوس H12 | VDD — Power supply |
التطبيقات النموذجية
K4B4G1646D-BHMA مناسب لـ 6 التطبيقs: Embedded Systems, Networking Equipment, Mobile Devices, Industrial Machinery, Medical Devices, Automotive Electronics.
Embedded Systems
The K4B4G1646D-BHMA is ideal for embedded systems requiring high-density, low-power memory. Its 4Gb density and 1.35V operation reduce power consumption, making it suitable for industrial controllers, IoT gateways, and single-board computers. The 1866 Mbps data rate ensures fast data processing, while the 96FBGA package fits compact PCB designs. According to Samsung, it is designed for high-density memory applications in embedded systems.
موصى به
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4B4G1646D-BHMA provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data processing, and the 1.35V operation reduces power in always-on network devices. The 96FBGA package allows for dense memory arrays on network line cards. According to Samsung, it is suitable for networking equipment.
موصى به
Mobile Devices
The K4B4G1646D-BHMA is well-suited for mobile devices like smartphones and tablets due to its low 1.35V operation, which extends battery life. The 4Gb density provides ample memory for multitasking and multimedia applications. The 1866 Mbps data rate ensures smooth performance for apps and games. Its compact 96FBGA package is ideal for space-constrained mobile PCBs. According to Samsung, it is used in mobile phones and tablets.
موصى به
Industrial Machinery
The K4B4G1646D-BHMA operates over -40°C to +95°C, making it suitable for industrial machinery that experiences extreme temperatures. Its high density and 1866 Mbps data rate support real-time control and data logging. The 1.35V operation reduces power in industrial systems. The 96FBGA package provides reliable solder joints for harsh environments. According to Samsung, it is used in industrial machinery.
موصى به
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BHMA provides reliable, high-density memory for data acquisition and processing. Its low 1.35V operation is critical for battery-powered portable medical devices. The 1866 Mbps data rate supports real-time signal processing. The 96FBGA package is compact for medical device PCBs. According to Samsung, it is used in medical devices.
موصى به
Automotive Electronics
The K4B4G1646D-BHMA is suitable for automotive electronics such as infotainment systems and ADAS, where high-density memory and low power are essential. Its wide temperature range (-40°C to +95°C) meets automotive requirements. The 1866 Mbps data rate supports high-bandwidth applications like navigation and camera processing. The 96FBGA package is robust for automotive environments. According to Samsung, it is used in automotive electronics.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K4B4G1646D-BHMA — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K4B4G1646E-BMK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C |
أبرز الفروقات
- D-die process for improved performance (مقابلK4B4G1646E-BMK0)
- Low voltage operation at 1.35V (مقابلMT41K256M16HA-125)
- Wide temperature range (مقابلIS43TR16256AL-125KBL)
ملاحظات التصميم
For reliable operation at 1866 Mbps, follow the PCB layout guidelines in the Samsung datasheet. Ensure proper impedance matching for DQ, DQS, and address/control lines. Use 40-60 ohm single-ended and 80-120 ohm differential impedance. Keep trace lengths matched within 50 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to VDD and VDDQ pins to minimize power supply noise.
The K4B4G1646D-BHMA operates at 1.35V, which is lower than standard DDR3 (1.5V). Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. According to the datasheet, the supply voltage range is 1.283V to 1.45V. Monitor the power supply for droop during high-speed switching.
The K4B4G1646D-BHMA operates over -40°C to +95°C. For high-density memory arrays, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 96FBGA package has a thermal resistance that depends on PCB copper area. Use thermal vias under the package to improve heat dissipation. According to Samsung, the device is suitable for industrial temperature ranges.
معلومات الامتثال
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory ICs.
