K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
N.º da peça: K4B4G1646D-BPH90 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $10.32 | $10,32 |
| 10 | $9.5 | $95,00 |
| 100 | $8.75 | $875,00 |
| 500 | $8.1 | $4.050,00 |
| 1.000 | $7.6 | $7.600,00 |
K4B4G1646D-BPH90 Visão geral
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BPH90 is specifically a 4Gb density device with a 16-bit data bus, making it suitable for applications requiring moderate memory capacity with high-speed data access.
Key features include a data rate of 2133Mb/s per pin, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). The device includes on-die termination (ODT) for improved signal integrity, ZQ calibration for output driver calibration, and a programmable CAS latency of up to 14. It also features auto precharge, asynchronous reset, and data mask functions. The 96FBGA package measures 13mm x 11.5mm with a 0.8mm ball pitch, enabling high-density PCB layouts.
Technically, the K4B4G1646D-BPH90 uses Samsung's D-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. The device supports a wide operating temperature range of 0°C to +85°C, making it suitable for commercial and industrial applications. It is lead-free and halogen-free, complying with RoHS regulations.
Typical applications include networking equipment (routers, switches), embedded computing systems, industrial automation, and consumer electronics such as set-top boxes and smart TVs. Its high-speed interface and low power consumption make it ideal for systems requiring reliable memory performance.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high data rates. The device requires a 1.35V supply and a separate VDDQ supply, which should be carefully regulated.
Alternativas drop-in para K4B4G1646D-BPH90 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4B4G1646D-BPH90 (mesmo formato e footprint) — diferindo em Package, CAS Latency, Data Rate, Operating Temperature, Supply Voltage.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4B4G1646D-BMH9
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →K4B4G1646D-BCH90
✅ Drop-In✓ Em estoque
$7.5 / unidade
Ver ficha técnica →K4B4G1646D-BYH90
✅ Drop-In✓ Em estoque
$8.8 / unidade
Ver ficha técnica →MT41K256M16HA-125
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →IS43TR16256A-125KBL
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$19.0909 / unidade
Ver ficha técnica →W634GU6RB-12
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$9.5 / unidade
Ver ficha técnica →K4B4G1646D-BPH90 Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4Gb |
| Organização da memória | 32M x 16 |
| Number of Banks | 8 |
| Taxa de dados | 2133 Mb/s per pin |
| Tensão de alimentação | 1.35V (DDR3L) |
| Encapsulamento | 96FBGA |
| Temperatura de operação | 0°C to +85°C |
| Latência CAS | Programmable up to 14 |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Lead-Free | Yes |
| Livre de halogênio | Yes |
| RoHS Compliant | Yes |
Configuração de pinos do K4B4G1646D-BPH90
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDDQ — DQ power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino A13 | VDD — Power supply |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDDQ — DQ power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDDQ — DQ power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino B13 | VSS — Ground |
| Pino C1 | VDD — Power supply |
| Pino C2 | A0 — Address input 0 |
| Pino C3 | A1 — Address input 1 |
| Pino C4 | A2 — Address input 2 |
| Pino C5 | A3 — Address input 3 |
| Pino C6 | A4 — Address input 4 |
| Pino C7 | A5 — Address input 5 |
| Pino C8 | A6 — Address input 6 |
| Pino C9 | A7 — Address input 7 |
| Pino C10 | A8 — Address input 8 |
| Pino C11 | A9 — Address input 9 |
| Pino C12 | A10/AP — Address input 10 / Auto precharge |
| Pino C13 | VSS — Ground |
| Pino D1 | VSS — Ground |
| Pino D2 | A11 — Address input 11 |
| Pino D3 | A12 — Address input 12 |
| Pino D4 | A13 — Address input 13 |
| Pino D5 | BA0 — Bank address 0 |
| Pino D6 | BA1 — Bank address 1 |
| Pino D7 | BA2 — Bank address 2 |
| Pino D8 | RAS# — Row address strobe |
| Pino D9 | CAS# — Column address strobe |
| Pino D10 | WE# — Write enable |
| Pino D11 | CS# — Chip select |
| Pino D12 | CKE — Clock enable |
| Pino D13 | VDD — Power supply |
| Pino E1 | VDDQ — DQ power supply |
| Pino E2 | ODT — On-die termination |
| Pino E3 | CK — Clock (positive) |
| Pino E4 | CK# — Clock (negative) |
| Pino E5 | VSS — Ground |
| Pino E6 | DM0 — Data mask 0 |
| Pino E7 | DM1 — Data mask 1 |
| Pino E8 | VDDQ — DQ power supply |
| Pino E9 | RESET# — Asynchronous reset |
| Pino E10 | VSS — Ground |
| Pino E11 | ZQ — ZQ calibration |
| Pino E12 | VDD — Power supply |
| Pino E13 | VSS — Ground |
| Pino F1 | VSS — Ground |
| Pino F2 | VDD — Power supply |
| Pino F3 | VSS — Ground |
| Pino F4 | VDDQ — DQ power supply |
| Pino F5 | VSS — Ground |
| Pino F6 | VDDQ — DQ power supply |
| Pino F7 | VSS — Ground |
| Pino F8 | VDDQ — DQ power supply |
| Pino F9 | VSS — Ground |
| Pino F10 | VDDQ — DQ power supply |
| Pino F11 | VSS — Ground |
| Pino F12 | VDD — Power supply |
| Pino F13 | VSS — Ground |
Aplicações típicas
K4B4G1646D-BPH90 é adequado para 6 aplicaçãos: Networking Equipment, Embedded Computing, Industrial Automation, Consumer Electronics, Data Center Servers, Automotive Infotainment.
Networking Equipment
The K4B4G1646D-BPH90 provides high-speed 2133Mb/s data transfer and low power consumption, making it ideal for routers and switches that require fast packet processing and large buffer memory. Its 4Gb density supports heavy traffic loads, while the 1.35V operation reduces thermal dissipation in dense chassis. The 96FBGA package allows compact board designs, and the on-die termination improves signal integrity in high-speed serial links.
Recomendado
Embedded Computing
In embedded systems, the K4B4G1646D-BPH90 offers a balance of capacity and speed, with 4Gb density and 2133Mb/s data rate. Its low 1.35V supply is suitable for power-sensitive applications like industrial PCs and single-board computers. The 96FBGA package fits space-constrained designs, and the wide operating temperature range (0°C to +85°C) ensures reliability in harsh environments. The device's auto precharge and ZQ calibration simplify memory controller design.
Recomendado
Industrial Automation
The K4B4G1646D-BPH90 is well-suited for industrial automation controllers that require reliable memory with high bandwidth. Its 2133Mb/s data rate enables fast data logging and real-time processing, while the 1.35V operation reduces power consumption in 24/7 operation. The 96FBGA package provides robustness against vibration, and the device's on-die termination helps maintain signal integrity in noisy industrial environments. The 0°C to +85°C temperature range covers most industrial applications.
Recomendado
Consumer Electronics
For consumer devices like smart TVs and set-top boxes, the K4B4G1646D-BPH90 provides high-speed memory at low power, enhancing user experience with smooth video playback and fast app loading. The 4Gb density is sufficient for modern multimedia applications, and the 1.35V supply helps meet energy efficiency standards. The compact 96FBGA package enables slim device designs, and the device's low power consumption extends battery life in portable consumer electronics.
Recomendado
Data Center Servers
In data center servers, the K4B4G1646D-BPH90 offers high bandwidth and capacity for virtualization and cloud computing workloads. Its 2133Mb/s data rate supports fast data access, while the 1.35V operation reduces power consumption in large server farms. The 96FBGA package allows high-density memory modules, and the device's on-die termination improves signal integrity in high-speed server memory channels. The 0°C to +85°C range is suitable for server environments.
Recomendado
Automotive Infotainment
The K4B4G1646D-BPH90 is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its 2133Mb/s data rate ensures smooth graphics and video playback, while the 1.35V supply reduces power consumption in vehicles. The 96FBGA package is compact and robust, and the device's wide temperature range (0°C to +85°C) covers most automotive cabin environments. On-die termination helps maintain signal integrity in the presence of electromagnetic interference.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4B4G1646D-BPH90 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4B4G1646D-BMH9 | K4B4G1646D-BCH90 | K4B4G1646D-BYH90 | MT41K256M16HA-125 | IS43TR16256A-125KBL | W634GU6RB-12 |
|---|---|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | ISSI | Winbond |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Data Rate | 2133 Mb/s | 1866 Mb/s | 1600 Mb/s | 1866 Mb/s | 1600 Mb/s | 1600 Mb/s | 1866 Mb/s |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Higher data rate of 2133Mb/s (vs K4B4G1646D-BCH90)
- DDR3L low voltage operation (vs Standard DDR3 (1.5V))
- Samsung D-die process (vs Older die revisions)
Notas de projeto
The K4B4G1646D-BPH90 requires a 1.35V VDD supply and a separate VDDQ supply. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize power supply noise. Ensure the power plane has adequate copper area to handle transient currents during read/write operations.
Follow the layout guidelines in the Samsung datasheet for high-speed DDR3L signals. Maintain controlled impedance for DQ, DQS, and address/command lines (typically 40-60 ohms). Keep trace lengths matched within +/- 10 mils for data and strobe pairs to ensure signal integrity at 2133Mb/s.
The device operates up to +85°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96FBGA package has a thermal resistance that should be considered; use thermal vias under the package to improve heat dissipation to the PCB ground plane.
Informações de conformidade
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
