NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
MPN: NT5AD512M16C4-HR ✓ نشطNT5AD512M16C4-HR نظرة عامة
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3. It achieves higher bandwidth and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a type of volatile memory that requires constant power to retain data, and it is widely used in servers, desktops, laptops, and embedded systems where high-speed data processing is critical.
Key features of the NT5AD512M16C4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) for data integrity. These features enhance reliability and performance in demanding environments. The operating temperature range is 0°C to +95°C, suitable for commercial and industrial applications.
The device utilizes advanced CMOS technology and a 96-ball TFBGA package, which provides excellent thermal and electrical performance. The 1.2V supply reduces power consumption compared to previous generations, and the built-in temperature sensor enables adaptive refresh rates, further optimizing power usage. The CRC function ensures data integrity during high-speed transfers, critical for server and networking applications.
Typical applications include servers, desktop and laptop computers, networking equipment (routers, switches), and embedded systems such as industrial PCs and automotive infotainment. The high density and speed make it ideal for memory-intensive tasks like virtualization, data analytics, and real-time processing.
When designing with this DDR4 device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The ZQ calibration pin requires a 240-ohm resistor to ground for proper on-die termination calibration.
بدائل مباشرة لـ NT5AD512M16C4-HR — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5AD512M16C4-HR (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Package, Operating Temperature, Density, Refresh.
NT5AD512M16C4-JR
✅ بديل مباشر✗ غير متوفر
$73.75 / وحدة
عرض ورقة البيانات ←NT5AD512M16C4-HRI
✅ بديل مباشر✓ متوفر في المخزون
$45.9375 / وحدة
عرض ورقة البيانات ←MT40A512M16TB-062E:J
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←H5AN8G6NAFR-UHC
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✓ متوفر في المخزون
$5.7422 / وحدة
عرض ورقة البيانات ←K4A8G165WB-BCTD
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$37 / وحدة
عرض ورقة البيانات ←NT5AD512M16C4-HR الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| التنظيم | 512M x 16 |
| Density | 8 Gbit |
| جهد التغذية | 1.2 V |
| معدل البيانات | 1.333 GHz (DDR4-2666) |
| درجة حرارة التشغيل | 0°C to +95°C |
| العلبة | FBGA-96 (TFBGA) |
| عدد الدبابيس | 96 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
تكوين أطراف NT5AD512M16C4-HR
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس B1 | DQ2 — Data input/output 2 |
| دبوس B2 | DQ3 — Data input/output 3 |
| دبوس B3 | VDD — Power supply |
| دبوس B4 | DQ4 — Data input/output 4 |
| دبوس C1 | DQ5 — Data input/output 5 |
| دبوس C2 | VSS — Ground |
| دبوس C3 | DQ6 — Data input/output 6 |
| دبوس C4 | DQ7 — Data input/output 7 |
| دبوس D1 | VDD — Power supply |
| دبوس D2 | DQ8 — Data input/output 8 |
| دبوس D3 | DQ9 — Data input/output 9 |
| دبوس D4 | VSS — Ground |
| دبوس E1 | DQ10 — Data input/output 10 |
| دبوس E2 | DQ11 — Data input/output 11 |
| دبوس E3 | VDD — Power supply |
| دبوس E4 | DQ12 — Data input/output 12 |
| دبوس F1 | DQ13 — Data input/output 13 |
| دبوس F2 | VSS — Ground |
| دبوس F3 | DQ14 — Data input/output 14 |
| دبوس F4 | DQ15 — Data input/output 15 |
| دبوس G1 | VDD — Power supply |
| دبوس G2 | A0 — Address input 0 |
| دبوس G3 | A1 — Address input 1 |
| دبوس G4 | VSS — Ground |
| دبوس H1 | A2 — Address input 2 |
| دبوس H2 | A3 — Address input 3 |
| دبوس H3 | VDD — Power supply |
| دبوس H4 | A4 — Address input 4 |
| دبوس J1 | A5 — Address input 5 |
| دبوس J2 | VSS — Ground |
| دبوس J3 | A6 — Address input 6 |
| دبوس J4 | A7 — Address input 7 |
| دبوس K1 | VDD — Power supply |
| دبوس K2 | A8 — Address input 8 |
| دبوس K3 | A9 — Address input 9 |
| دبوس K4 | VSS — Ground |
| دبوس L1 | A10 — Address input 10 |
| دبوس L2 | A11 — Address input 11 |
| دبوس L3 | VDD — Power supply |
| دبوس L4 | A12 — Address input 12 |
| دبوس M1 | A13 — Address input 13 |
| دبوس M2 | VSS — Ground |
| دبوس M3 | A14 — Address input 14 |
| دبوس M4 | A15 — Address input 15 |
| دبوس N1 | VDD — Power supply |
| دبوس N2 | BA0 — Bank address 0 |
| دبوس N3 | BA1 — Bank address 1 |
| دبوس N4 | VSS — Ground |
| دبوس P1 | BA2 — Bank address 2 |
| دبوس P2 | RAS_n — Row address strobe |
| دبوس P3 | CAS_n — Column address strobe |
| دبوس P4 | WE_n — Write enable |
| دبوس R1 | CS_n — Chip select |
| دبوس R2 | CKE — Clock enable |
| دبوس R3 | ODT — On-die termination |
| دبوس R4 | ZQ — Calibration reference |
| دبوس T1 | CK_t — Clock positive |
| دبوس T2 | CK_c — Clock negative |
| دبوس T3 | VDD — Power supply |
| دبوس T4 | VSS — Ground |
التطبيقات النموذجية
NT5AD512M16C4-HR مناسب لـ 6 التطبيقs: Server Memory, Networking Equipment, Embedded Systems, Desktop and Laptop Computers, Data Analytics and AI, Telecommunications Infrastructure.
Server Memory
The NT5AD512M16C4-HR provides high-density, high-speed memory for servers, supporting DDR4-2666 data rates and 8Gbit capacity. Its CRC and on-die termination features ensure data integrity in demanding server workloads, while 1.2V operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact DIMM designs, and the built-in temperature sensor allows adaptive refresh for improved reliability.
موصى به
Networking Equipment
In routers, switches, and network appliances, the NT5AD512M16C4-HR offers the speed and density needed for packet buffering and forwarding tables. Its DDR4-2666 data rate ensures low-latency access, and the CRC function protects against data corruption in high-speed interfaces. The 1.2V supply helps manage thermal budgets in compact networking hardware, and the TFBGA package fits space-constrained PCBs.
موصى به
Embedded Systems
For industrial PCs, medical devices, and automotive infotainment, the NT5AD512M16C4-HR provides reliable, high-speed memory. Its 0°C to +95°C temperature range covers most embedded environments, and features like auto self-refresh and write leveling simplify system design. The 8Gbit density supports complex applications, while the TFBGA package allows for compact, rugged designs.
موصى به
Desktop and Laptop Computers
The NT5AD512M16C4-HR is ideal for desktop and laptop memory modules, offering high bandwidth for gaming, content creation, and multitasking. Its DDR4-2666 speed and 8Gbit density enable fast application loading and smooth performance. The 1.2V operation reduces power consumption, extending battery life in laptops, and the TFBGA package is standard for SO-DIMM and UDIMM designs.
موصى به
Data Analytics and AI
In data analytics and AI inference systems, the NT5AD512M16C4-HR provides the memory bandwidth and capacity required for large datasets and model parameters. Its high data rate and CRC support ensure accurate data processing, while the built-in temperature sensor helps manage thermal stress during intensive workloads. The 8Gbit density allows for scalable memory configurations.
موصى به
Telecommunications Infrastructure
For base stations, switches, and telecom equipment, the NT5AD512M16C4-HR offers reliable, high-speed memory for signal processing and control plane functions. Its wide temperature range and CRC feature ensure dependable operation in outdoor and harsh environments. The 1.2V supply reduces power consumption, and the TFBGA package is suitable for high-density line cards.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5AD512M16C4-HR — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5AD512M16C4-JR | NT5AD512M16C4-HRI | MT40A512M16TB-062E:J | H5AN8G6NAFR-UHC | K4A8G165WB-BCTD |
|---|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | SK Hynix | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 1.333 GHz (DDR4-2666) | 1.2 GHz (DDR4-2400) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CRC Function | Yes | Yes | Yes | Yes | Yes | Yes |
أبرز الفروقات
- Higher speed grade than NT5AD512M16C4-JR (مقابلNT5AD512M16C4-JR)
- Commercial temperature range vs industrial (مقابلNT5AD512M16C4-HRI)
- Nanya's proven reliability and compatibility (مقابلMT40A512M16TB-062E:J)
ملاحظات التصميم
For DDR4 routing, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Follow the manufacturer's layout guidelines for the 96-ball TFBGA package to ensure reliable operation at 1.333GHz.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm resistor to ground for on-die termination calibration. Ensure the VDD supply is stable and within 1.14V to 1.26V.
The NT5AD512M16C4-HR operates up to +95°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The built-in temperature sensor can be used to implement adaptive refresh, reducing power and heat in idle states.
معلومات الامتثال
RoHS compliant per JLCPCB listing. Other compliance data not specified in verified sources.
