NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
N.º da peça: NT5AD512M16C4-HR ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $53.89 | $53,89 |
| 10 | $51.2 | $512,00 |
| 100 | $48.5 | $4.850,00 |
| 500 | $45.8 | $22.900,00 |
| 1.000 | $43.1 | $43.100,00 |
NT5AD512M16C4-HR Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3. It achieves higher bandwidth and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a type of volatile memory that requires constant power to retain data, and it is widely used in servers, desktops, laptops, and embedded systems where high-speed data processing is critical.
Key features of the NT5AD512M16C4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) for data integrity. These features enhance reliability and performance in demanding environments. The operating temperature range is 0°C to +95°C, suitable for commercial and industrial applications.
The device utilizes advanced CMOS technology and a 96-ball TFBGA package, which provides excellent thermal and electrical performance. The 1.2V supply reduces power consumption compared to previous generations, and the built-in temperature sensor enables adaptive refresh rates, further optimizing power usage. The CRC function ensures data integrity during high-speed transfers, critical for server and networking applications.
Typical applications include servers, desktop and laptop computers, networking equipment (routers, switches), and embedded systems such as industrial PCs and automotive infotainment. The high density and speed make it ideal for memory-intensive tasks like virtualization, data analytics, and real-time processing.
When designing with this DDR4 device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The ZQ calibration pin requires a 240-ohm resistor to ground for proper on-die termination calibration.
Alternativas drop-in para NT5AD512M16C4-HR — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT5AD512M16C4-HR (mesmo formato e footprint) — diferindo em Data Rate, Package, Operating Temperature, Density, Refresh.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT5AD512M16C4-JR
✅ Drop-In✓ Em estoque
$73.75 / unidade
Ver ficha técnica →NT5AD512M16C4-HRI
✅ Drop-In✓ Em estoque
$45.9375 / unidade
Ver ficha técnica →MT40A512M16TB-062E:J
✅ Drop-In✓ Em estoque
$8.1 / unidade
Ver ficha técnica →H5AN8G6NAFR-UHC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$5.7422 / unidade
Ver ficha técnica →K4A8G165WB-BCTD
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$37 / unidade
Ver ficha técnica →NT5AD512M16C4-HR Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Organização da memória | 512M x 16 |
| Density | 8 Gbit |
| Tensão de alimentação | 1.2 V |
| Taxa de dados | 1.333 GHz (DDR4-2666) |
| Temperatura de operação | 0°C to +95°C |
| Encapsulamento | FBGA-96 (TFBGA) |
| Número de pinos | 96 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuração de pinos do NT5AD512M16C4-HR
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino B1 | DQ2 — Data input/output 2 |
| Pino B2 | DQ3 — Data input/output 3 |
| Pino B3 | VDD — Power supply |
| Pino B4 | DQ4 — Data input/output 4 |
| Pino C1 | DQ5 — Data input/output 5 |
| Pino C2 | VSS — Ground |
| Pino C3 | DQ6 — Data input/output 6 |
| Pino C4 | DQ7 — Data input/output 7 |
| Pino D1 | VDD — Power supply |
| Pino D2 | DQ8 — Data input/output 8 |
| Pino D3 | DQ9 — Data input/output 9 |
| Pino D4 | VSS — Ground |
| Pino E1 | DQ10 — Data input/output 10 |
| Pino E2 | DQ11 — Data input/output 11 |
| Pino E3 | VDD — Power supply |
| Pino E4 | DQ12 — Data input/output 12 |
| Pino F1 | DQ13 — Data input/output 13 |
| Pino F2 | VSS — Ground |
| Pino F3 | DQ14 — Data input/output 14 |
| Pino F4 | DQ15 — Data input/output 15 |
| Pino G1 | VDD — Power supply |
| Pino G2 | A0 — Address input 0 |
| Pino G3 | A1 — Address input 1 |
| Pino G4 | VSS — Ground |
| Pino H1 | A2 — Address input 2 |
| Pino H2 | A3 — Address input 3 |
| Pino H3 | VDD — Power supply |
| Pino H4 | A4 — Address input 4 |
| Pino J1 | A5 — Address input 5 |
| Pino J2 | VSS — Ground |
| Pino J3 | A6 — Address input 6 |
| Pino J4 | A7 — Address input 7 |
| Pino K1 | VDD — Power supply |
| Pino K2 | A8 — Address input 8 |
| Pino K3 | A9 — Address input 9 |
| Pino K4 | VSS — Ground |
| Pino L1 | A10 — Address input 10 |
| Pino L2 | A11 — Address input 11 |
| Pino L3 | VDD — Power supply |
| Pino L4 | A12 — Address input 12 |
| Pino M1 | A13 — Address input 13 |
| Pino M2 | VSS — Ground |
| Pino M3 | A14 — Address input 14 |
| Pino M4 | A15 — Address input 15 |
| Pino N1 | VDD — Power supply |
| Pino N2 | BA0 — Bank address 0 |
| Pino N3 | BA1 — Bank address 1 |
| Pino N4 | VSS — Ground |
| Pino P1 | BA2 — Bank address 2 |
| Pino P2 | RAS_n — Row address strobe |
| Pino P3 | CAS_n — Column address strobe |
| Pino P4 | WE_n — Write enable |
| Pino R1 | CS_n — Chip select |
| Pino R2 | CKE — Clock enable |
| Pino R3 | ODT — On-die termination |
| Pino R4 | ZQ — Calibration reference |
| Pino T1 | CK_t — Clock positive |
| Pino T2 | CK_c — Clock negative |
| Pino T3 | VDD — Power supply |
| Pino T4 | VSS — Ground |
Aplicações típicas
NT5AD512M16C4-HR é adequado para 6 aplicaçãos: Server Memory, Networking Equipment, Embedded Systems, Desktop and Laptop Computers, Data Analytics and AI, Telecommunications Infrastructure.
Server Memory
The NT5AD512M16C4-HR provides high-density, high-speed memory for servers, supporting DDR4-2666 data rates and 8Gbit capacity. Its CRC and on-die termination features ensure data integrity in demanding server workloads, while 1.2V operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact DIMM designs, and the built-in temperature sensor allows adaptive refresh for improved reliability.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the NT5AD512M16C4-HR offers the speed and density needed for packet buffering and forwarding tables. Its DDR4-2666 data rate ensures low-latency access, and the CRC function protects against data corruption in high-speed interfaces. The 1.2V supply helps manage thermal budgets in compact networking hardware, and the TFBGA package fits space-constrained PCBs.
Recomendado
Embedded Systems
For industrial PCs, medical devices, and automotive infotainment, the NT5AD512M16C4-HR provides reliable, high-speed memory. Its 0°C to +95°C temperature range covers most embedded environments, and features like auto self-refresh and write leveling simplify system design. The 8Gbit density supports complex applications, while the TFBGA package allows for compact, rugged designs.
Recomendado
Desktop and Laptop Computers
The NT5AD512M16C4-HR is ideal for desktop and laptop memory modules, offering high bandwidth for gaming, content creation, and multitasking. Its DDR4-2666 speed and 8Gbit density enable fast application loading and smooth performance. The 1.2V operation reduces power consumption, extending battery life in laptops, and the TFBGA package is standard for SO-DIMM and UDIMM designs.
Recomendado
Data Analytics and AI
In data analytics and AI inference systems, the NT5AD512M16C4-HR provides the memory bandwidth and capacity required for large datasets and model parameters. Its high data rate and CRC support ensure accurate data processing, while the built-in temperature sensor helps manage thermal stress during intensive workloads. The 8Gbit density allows for scalable memory configurations.
Recomendado
Telecommunications Infrastructure
For base stations, switches, and telecom equipment, the NT5AD512M16C4-HR offers reliable, high-speed memory for signal processing and control plane functions. Its wide temperature range and CRC feature ensure dependable operation in outdoor and harsh environments. The 1.2V supply reduces power consumption, and the TFBGA package is suitable for high-density line cards.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT5AD512M16C4-HR — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT5AD512M16C4-JR | NT5AD512M16C4-HRI | MT40A512M16TB-062E:J | H5AN8G6NAFR-UHC | K4A8G165WB-BCTD |
|---|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | SK Hynix | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 1.333 GHz (DDR4-2666) | 1.2 GHz (DDR4-2400) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CRC Function | Yes | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Higher speed grade than NT5AD512M16C4-JR (vs NT5AD512M16C4-JR)
- Commercial temperature range vs industrial (vs NT5AD512M16C4-HRI)
- Nanya's proven reliability and compatibility (vs MT40A512M16TB-062E:J)
Notas de projeto
For DDR4 routing, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Follow the manufacturer's layout guidelines for the 96-ball TFBGA package to ensure reliable operation at 1.333GHz.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm resistor to ground for on-die termination calibration. Ensure the VDD supply is stable and within 1.14V to 1.26V.
The NT5AD512M16C4-HR operates up to +95°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The built-in temperature sensor can be used to implement adaptive refresh, reducing power and heat in idle states.
Informações de conformidade
RoHS compliant per JLCPCB listing. Other compliance data not specified in verified sources.
