NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
Артикул: NT5AD512M16C4-HR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $53.89 | $53,89 |
| 10 | $51.2 | $512,00 |
| 100 | $48.5 | $4.850,00 |
| 500 | $45.8 | $22.900,00 |
| 1.000 | $43.1 | $43.100,00 |
NT5AD512M16C4-HR Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3. It achieves higher bandwidth and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a type of volatile memory that requires constant power to retain data, and it is widely used in servers, desktops, laptops, and embedded systems where high-speed data processing is critical.
Key features of the NT5AD512M16C4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) for data integrity. These features enhance reliability and performance in demanding environments. The operating temperature range is 0°C to +95°C, suitable for commercial and industrial applications.
The device utilizes advanced CMOS technology and a 96-ball TFBGA package, which provides excellent thermal and electrical performance. The 1.2V supply reduces power consumption compared to previous generations, and the built-in temperature sensor enables adaptive refresh rates, further optimizing power usage. The CRC function ensures data integrity during high-speed transfers, critical for server and networking applications.
Typical applications include servers, desktop and laptop computers, networking equipment (routers, switches), and embedded systems such as industrial PCs and automotive infotainment. The high density and speed make it ideal for memory-intensive tasks like virtualization, data analytics, and real-time processing.
When designing with this DDR4 device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The ZQ calibration pin requires a 240-ohm resistor to ground for proper on-die termination calibration.
Аналоги без доработки для NT5AD512M16C4-HR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с NT5AD512M16C4-HR (тот же форм-фактор и посадочное место) — отличается по Data Rate, Package, Operating Temperature, Density, Refresh.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
NT5AD512M16C4-JR
✅ Прямая замена✓ В наличии
$73.75 / шт.
Открыть даташит →NT5AD512M16C4-HRI
✅ Прямая замена✓ В наличии
$45.9375 / шт.
Открыть даташит →MT40A512M16TB-062E:J
✅ Прямая замена✓ В наличии
$8.1 / шт.
Открыть даташит →H5AN8G6NAFR-UHC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$5.7422 / шт.
Открыть даташит →K4A8G165WB-BCTD
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$37 / шт.
Открыть даташит →NT5AD512M16C4-HR Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Организация памяти | 512M x 16 |
| Density | 8 Gbit |
| Напряжение питания | 1.2 V |
| Скорость передачи данных | 1.333 GHz (DDR4-2666) |
| Рабочая температура | 0°C to +95°C |
| Корпус | FBGA-96 (TFBGA) |
| Количество выводов | 96 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Конфигурация выводов NT5AD512M16C4-HR
| Контакт A1 | VDD — Power supply |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт A4 | VSS — Ground |
| Контакт B1 | DQ2 — Data input/output 2 |
| Контакт B2 | DQ3 — Data input/output 3 |
| Контакт B3 | VDD — Power supply |
| Контакт B4 | DQ4 — Data input/output 4 |
| Контакт C1 | DQ5 — Data input/output 5 |
| Контакт C2 | VSS — Ground |
| Контакт C3 | DQ6 — Data input/output 6 |
| Контакт C4 | DQ7 — Data input/output 7 |
| Контакт D1 | VDD — Power supply |
| Контакт D2 | DQ8 — Data input/output 8 |
| Контакт D3 | DQ9 — Data input/output 9 |
| Контакт D4 | VSS — Ground |
| Контакт E1 | DQ10 — Data input/output 10 |
| Контакт E2 | DQ11 — Data input/output 11 |
| Контакт E3 | VDD — Power supply |
| Контакт E4 | DQ12 — Data input/output 12 |
| Контакт F1 | DQ13 — Data input/output 13 |
| Контакт F2 | VSS — Ground |
| Контакт F3 | DQ14 — Data input/output 14 |
| Контакт F4 | DQ15 — Data input/output 15 |
| Контакт G1 | VDD — Power supply |
| Контакт G2 | A0 — Address input 0 |
| Контакт G3 | A1 — Address input 1 |
| Контакт G4 | VSS — Ground |
| Контакт H1 | A2 — Address input 2 |
| Контакт H2 | A3 — Address input 3 |
| Контакт H3 | VDD — Power supply |
| Контакт H4 | A4 — Address input 4 |
| Контакт J1 | A5 — Address input 5 |
| Контакт J2 | VSS — Ground |
| Контакт J3 | A6 — Address input 6 |
| Контакт J4 | A7 — Address input 7 |
| Контакт K1 | VDD — Power supply |
| Контакт K2 | A8 — Address input 8 |
| Контакт K3 | A9 — Address input 9 |
| Контакт K4 | VSS — Ground |
| Контакт L1 | A10 — Address input 10 |
| Контакт L2 | A11 — Address input 11 |
| Контакт L3 | VDD — Power supply |
| Контакт L4 | A12 — Address input 12 |
| Контакт M1 | A13 — Address input 13 |
| Контакт M2 | VSS — Ground |
| Контакт M3 | A14 — Address input 14 |
| Контакт M4 | A15 — Address input 15 |
| Контакт N1 | VDD — Power supply |
| Контакт N2 | BA0 — Bank address 0 |
| Контакт N3 | BA1 — Bank address 1 |
| Контакт N4 | VSS — Ground |
| Контакт P1 | BA2 — Bank address 2 |
| Контакт P2 | RAS_n — Row address strobe |
| Контакт P3 | CAS_n — Column address strobe |
| Контакт P4 | WE_n — Write enable |
| Контакт R1 | CS_n — Chip select |
| Контакт R2 | CKE — Clock enable |
| Контакт R3 | ODT — On-die termination |
| Контакт R4 | ZQ — Calibration reference |
| Контакт T1 | CK_t — Clock positive |
| Контакт T2 | CK_c — Clock negative |
| Контакт T3 | VDD — Power supply |
| Контакт T4 | VSS — Ground |
Типичное применение
NT5AD512M16C4-HR подходит для 6 применениеs: Server Memory, Networking Equipment, Embedded Systems, Desktop and Laptop Computers, Data Analytics and AI, Telecommunications Infrastructure.
Server Memory
The NT5AD512M16C4-HR provides high-density, high-speed memory for servers, supporting DDR4-2666 data rates and 8Gbit capacity. Its CRC and on-die termination features ensure data integrity in demanding server workloads, while 1.2V operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact DIMM designs, and the built-in temperature sensor allows adaptive refresh for improved reliability.
Рекомендуется
Networking Equipment
In routers, switches, and network appliances, the NT5AD512M16C4-HR offers the speed and density needed for packet buffering and forwarding tables. Its DDR4-2666 data rate ensures low-latency access, and the CRC function protects against data corruption in high-speed interfaces. The 1.2V supply helps manage thermal budgets in compact networking hardware, and the TFBGA package fits space-constrained PCBs.
Рекомендуется
Embedded Systems
For industrial PCs, medical devices, and automotive infotainment, the NT5AD512M16C4-HR provides reliable, high-speed memory. Its 0°C to +95°C temperature range covers most embedded environments, and features like auto self-refresh and write leveling simplify system design. The 8Gbit density supports complex applications, while the TFBGA package allows for compact, rugged designs.
Рекомендуется
Desktop and Laptop Computers
The NT5AD512M16C4-HR is ideal for desktop and laptop memory modules, offering high bandwidth for gaming, content creation, and multitasking. Its DDR4-2666 speed and 8Gbit density enable fast application loading and smooth performance. The 1.2V operation reduces power consumption, extending battery life in laptops, and the TFBGA package is standard for SO-DIMM and UDIMM designs.
Рекомендуется
Data Analytics and AI
In data analytics and AI inference systems, the NT5AD512M16C4-HR provides the memory bandwidth and capacity required for large datasets and model parameters. Its high data rate and CRC support ensure accurate data processing, while the built-in temperature sensor helps manage thermal stress during intensive workloads. The 8Gbit density allows for scalable memory configurations.
Рекомендуется
Telecommunications Infrastructure
For base stations, switches, and telecom equipment, the NT5AD512M16C4-HR offers reliable, high-speed memory for signal processing and control plane functions. Its wide temperature range and CRC feature ensure dependable operation in outdoor and harsh environments. The 1.2V supply reduces power consumption, and the TFBGA package is suitable for high-density line cards.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для NT5AD512M16C4-HR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | NT5AD512M16C4-JR | NT5AD512M16C4-HRI | MT40A512M16TB-062E:J | H5AN8G6NAFR-UHC | K4A8G165WB-BCTD |
|---|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | SK Hynix | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 1.333 GHz (DDR4-2666) | 1.2 GHz (DDR4-2400) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CRC Function | Yes | Yes | Yes | Yes | Yes | Yes |
Ключевые отличия
- Higher speed grade than NT5AD512M16C4-JR (против NT5AD512M16C4-JR)
- Commercial temperature range vs industrial (против NT5AD512M16C4-HRI)
- Nanya's proven reliability and compatibility (против MT40A512M16TB-062E:J)
Заметки по проектированию
For DDR4 routing, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Follow the manufacturer's layout guidelines for the 96-ball TFBGA package to ensure reliable operation at 1.333GHz.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm resistor to ground for on-die termination calibration. Ensure the VDD supply is stable and within 1.14V to 1.26V.
The NT5AD512M16C4-HR operates up to +95°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The built-in temperature sensor can be used to implement adaptive refresh, reducing power and heat in idle states.
Информация о соответствии
RoHS compliant per JLCPCB listing. Other compliance data not specified in verified sources.
