NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
Référence : NT5AD512M16C4-HR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $53.89 | $53,89 |
| 10 | $51.2 | $512,00 |
| 100 | $48.5 | $4 850,00 |
| 500 | $45.8 | $22 900,00 |
| 1 000 | $43.1 | $43 100,00 |
NT5AD512M16C4-HR Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3. It achieves higher bandwidth and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a type of volatile memory that requires constant power to retain data, and it is widely used in servers, desktops, laptops, and embedded systems where high-speed data processing is critical.
Key features of the NT5AD512M16C4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) for data integrity. These features enhance reliability and performance in demanding environments. The operating temperature range is 0°C to +95°C, suitable for commercial and industrial applications.
The device utilizes advanced CMOS technology and a 96-ball TFBGA package, which provides excellent thermal and electrical performance. The 1.2V supply reduces power consumption compared to previous generations, and the built-in temperature sensor enables adaptive refresh rates, further optimizing power usage. The CRC function ensures data integrity during high-speed transfers, critical for server and networking applications.
Typical applications include servers, desktop and laptop computers, networking equipment (routers, switches), and embedded systems such as industrial PCs and automotive infotainment. The high density and speed make it ideal for memory-intensive tasks like virtualization, data analytics, and real-time processing.
When designing with this DDR4 device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The ZQ calibration pin requires a 240-ohm resistor to ground for proper on-die termination calibration.
Alternatives de remplacement direct pour NT5AD512M16C4-HR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5AD512M16C4-HR (même facteur de forme et même empreinte) — différant par Data Rate, Package, Operating Temperature, Density, Refresh.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5AD512M16C4-JR
✅ Remplacement direct✓ En stock
$73.75 / unité
Voir la fiche technique →NT5AD512M16C4-HRI
✅ Remplacement direct✓ En stock
$45.9375 / unité
Voir la fiche technique →MT40A512M16TB-062E:J
✅ Remplacement direct✓ En stock
$8.1 / unité
Voir la fiche technique →H5AN8G6NAFR-UHC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.7422 / unité
Voir la fiche technique →K4A8G165WB-BCTD
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$37 / unité
Voir la fiche technique →NT5AD512M16C4-HR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Organisation de la mémoire | 512M x 16 |
| Density | 8 Gbit |
| Tension d'alimentation | 1.2 V |
| Débit de données | 1.333 GHz (DDR4-2666) |
| Température de fonctionnement | 0°C to +95°C |
| Boîtier | FBGA-96 (TFBGA) |
| Nombre de broches | 96 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuration des broches de NT5AD512M16C4-HR
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | DQ2 — Data input/output 2 |
| Broche B2 | DQ3 — Data input/output 3 |
| Broche B3 | VDD — Power supply |
| Broche B4 | DQ4 — Data input/output 4 |
| Broche C1 | DQ5 — Data input/output 5 |
| Broche C2 | VSS — Ground |
| Broche C3 | DQ6 — Data input/output 6 |
| Broche C4 | DQ7 — Data input/output 7 |
| Broche D1 | VDD — Power supply |
| Broche D2 | DQ8 — Data input/output 8 |
| Broche D3 | DQ9 — Data input/output 9 |
| Broche D4 | VSS — Ground |
| Broche E1 | DQ10 — Data input/output 10 |
| Broche E2 | DQ11 — Data input/output 11 |
| Broche E3 | VDD — Power supply |
| Broche E4 | DQ12 — Data input/output 12 |
| Broche F1 | DQ13 — Data input/output 13 |
| Broche F2 | VSS — Ground |
| Broche F3 | DQ14 — Data input/output 14 |
| Broche F4 | DQ15 — Data input/output 15 |
| Broche G1 | VDD — Power supply |
| Broche G2 | A0 — Address input 0 |
| Broche G3 | A1 — Address input 1 |
| Broche G4 | VSS — Ground |
| Broche H1 | A2 — Address input 2 |
| Broche H2 | A3 — Address input 3 |
| Broche H3 | VDD — Power supply |
| Broche H4 | A4 — Address input 4 |
| Broche J1 | A5 — Address input 5 |
| Broche J2 | VSS — Ground |
| Broche J3 | A6 — Address input 6 |
| Broche J4 | A7 — Address input 7 |
| Broche K1 | VDD — Power supply |
| Broche K2 | A8 — Address input 8 |
| Broche K3 | A9 — Address input 9 |
| Broche K4 | VSS — Ground |
| Broche L1 | A10 — Address input 10 |
| Broche L2 | A11 — Address input 11 |
| Broche L3 | VDD — Power supply |
| Broche L4 | A12 — Address input 12 |
| Broche M1 | A13 — Address input 13 |
| Broche M2 | VSS — Ground |
| Broche M3 | A14 — Address input 14 |
| Broche M4 | A15 — Address input 15 |
| Broche N1 | VDD — Power supply |
| Broche N2 | BA0 — Bank address 0 |
| Broche N3 | BA1 — Bank address 1 |
| Broche N4 | VSS — Ground |
| Broche P1 | BA2 — Bank address 2 |
| Broche P2 | RAS_n — Row address strobe |
| Broche P3 | CAS_n — Column address strobe |
| Broche P4 | WE_n — Write enable |
| Broche R1 | CS_n — Chip select |
| Broche R2 | CKE — Clock enable |
| Broche R3 | ODT — On-die termination |
| Broche R4 | ZQ — Calibration reference |
| Broche T1 | CK_t — Clock positive |
| Broche T2 | CK_c — Clock negative |
| Broche T3 | VDD — Power supply |
| Broche T4 | VSS — Ground |
Applications typiques
NT5AD512M16C4-HR convient pour 6 applications: Server Memory, Networking Equipment, Embedded Systems, Desktop and Laptop Computers, Data Analytics and AI, Telecommunications Infrastructure.
Server Memory
The NT5AD512M16C4-HR provides high-density, high-speed memory for servers, supporting DDR4-2666 data rates and 8Gbit capacity. Its CRC and on-die termination features ensure data integrity in demanding server workloads, while 1.2V operation reduces power consumption in data centers. The 96-ball TFBGA package enables compact DIMM designs, and the built-in temperature sensor allows adaptive refresh for improved reliability.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the NT5AD512M16C4-HR offers the speed and density needed for packet buffering and forwarding tables. Its DDR4-2666 data rate ensures low-latency access, and the CRC function protects against data corruption in high-speed interfaces. The 1.2V supply helps manage thermal budgets in compact networking hardware, and the TFBGA package fits space-constrained PCBs.
Recommandé
Embedded Systems
For industrial PCs, medical devices, and automotive infotainment, the NT5AD512M16C4-HR provides reliable, high-speed memory. Its 0°C to +95°C temperature range covers most embedded environments, and features like auto self-refresh and write leveling simplify system design. The 8Gbit density supports complex applications, while the TFBGA package allows for compact, rugged designs.
Recommandé
Desktop and Laptop Computers
The NT5AD512M16C4-HR is ideal for desktop and laptop memory modules, offering high bandwidth for gaming, content creation, and multitasking. Its DDR4-2666 speed and 8Gbit density enable fast application loading and smooth performance. The 1.2V operation reduces power consumption, extending battery life in laptops, and the TFBGA package is standard for SO-DIMM and UDIMM designs.
Recommandé
Data Analytics and AI
In data analytics and AI inference systems, the NT5AD512M16C4-HR provides the memory bandwidth and capacity required for large datasets and model parameters. Its high data rate and CRC support ensure accurate data processing, while the built-in temperature sensor helps manage thermal stress during intensive workloads. The 8Gbit density allows for scalable memory configurations.
Recommandé
Telecommunications Infrastructure
For base stations, switches, and telecom equipment, the NT5AD512M16C4-HR offers reliable, high-speed memory for signal processing and control plane functions. Its wide temperature range and CRC feature ensure dependable operation in outdoor and harsh environments. The 1.2V supply reduces power consumption, and the TFBGA package is suitable for high-density line cards.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5AD512M16C4-HR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5AD512M16C4-JR | NT5AD512M16C4-HRI | MT40A512M16TB-062E:J | H5AN8G6NAFR-UHC | K4A8G165WB-BCTD |
|---|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) | FBGA-96 (TFBGA) |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | SK Hynix | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 1.333 GHz (DDR4-2666) | 1.2 GHz (DDR4-2400) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) | 1.333 GHz (DDR4-2666) |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CRC Function | Yes | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Higher speed grade than NT5AD512M16C4-JR (vs NT5AD512M16C4-JR)
- Commercial temperature range vs industrial (vs NT5AD512M16C4-HRI)
- Nanya's proven reliability and compatibility (vs MT40A512M16TB-062E:J)
Notes de conception
For DDR4 routing, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Follow the manufacturer's layout guidelines for the 96-ball TFBGA package to ensure reliable operation at 1.333GHz.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm resistor to ground for on-die termination calibration. Ensure the VDD supply is stable and within 1.14V to 1.26V.
The NT5AD512M16C4-HR operates up to +95°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The built-in temperature sensor can be used to implement adaptive refresh, reducing power and heat in idle states.
Informations de conformité
RoHS compliant per JLCPCB listing. Other compliance data not specified in verified sources.
